SE9900210D0 - Gate biasing arrangement - Google Patents
Gate biasing arrangementInfo
- Publication number
- SE9900210D0 SE9900210D0 SE9900210A SE9900210A SE9900210D0 SE 9900210 D0 SE9900210 D0 SE 9900210D0 SE 9900210 A SE9900210 A SE 9900210A SE 9900210 A SE9900210 A SE 9900210A SE 9900210 D0 SE9900210 D0 SE 9900210D0
- Authority
- SE
- Sweden
- Prior art keywords
- biasing arrangement
- transistor
- power transistor
- gate biasing
- gate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Control Of Electrical Variables (AREA)
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9900210A SE516012C2 (sv) | 1999-01-25 | 1999-01-25 | Styreförspänningsanordning |
TW088102938A TW427026B (en) | 1999-01-25 | 1999-02-26 | Gate biasing arrangement |
PCT/SE1999/002504 WO2000044089A1 (en) | 1999-01-25 | 1999-12-30 | Gate biasing arrangement |
KR1020017008749A KR100580748B1 (ko) | 1999-01-25 | 1999-12-30 | 게이트 바이어싱 장치 |
JP2000595421A JP2002535907A (ja) | 1999-01-25 | 1999-12-30 | ゲートバイアス装置 |
AU23349/00A AU2334900A (en) | 1999-01-25 | 1999-12-30 | Gate biasing arrangement |
EP99967050A EP1153475B1 (en) | 1999-01-25 | 1999-12-30 | Gate biasing arrangement |
CNB998158240A CN1196252C (zh) | 1999-01-25 | 1999-12-30 | 栅极偏置结构 |
CA002359679A CA2359679A1 (en) | 1999-01-25 | 1999-12-30 | Gate biasing arrangement |
DE69934828T DE69934828T2 (de) | 1999-01-25 | 1999-12-30 | Gate-vorspannungsvorrichtung |
US09/489,947 US6288596B1 (en) | 1999-01-25 | 2000-01-24 | Gate biasing arrangement to temperature compensate a quiescent current of a power transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9900210A SE516012C2 (sv) | 1999-01-25 | 1999-01-25 | Styreförspänningsanordning |
Publications (3)
Publication Number | Publication Date |
---|---|
SE9900210D0 true SE9900210D0 (sv) | 1999-01-25 |
SE9900210L SE9900210L (sv) | 2000-07-26 |
SE516012C2 SE516012C2 (sv) | 2001-11-05 |
Family
ID=20414206
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9900210A SE516012C2 (sv) | 1999-01-25 | 1999-01-25 | Styreförspänningsanordning |
Country Status (11)
Country | Link |
---|---|
US (1) | US6288596B1 (sv) |
EP (1) | EP1153475B1 (sv) |
JP (1) | JP2002535907A (sv) |
KR (1) | KR100580748B1 (sv) |
CN (1) | CN1196252C (sv) |
AU (1) | AU2334900A (sv) |
CA (1) | CA2359679A1 (sv) |
DE (1) | DE69934828T2 (sv) |
SE (1) | SE516012C2 (sv) |
TW (1) | TW427026B (sv) |
WO (1) | WO2000044089A1 (sv) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6452370B1 (en) * | 2001-11-13 | 2002-09-17 | Agilent Technologies, Inc. | Low noise biasing technique |
US6600301B1 (en) * | 2002-04-30 | 2003-07-29 | Raytheon Company | Current shutdown circuit for active bias circuit having process variation compensation |
WO2004040750A1 (en) | 2002-10-30 | 2004-05-13 | Koninklijke Philips Electronics N.V. | Amplifier bias circuit, method for biasing an amplifier and integrated circuit comprising an amplifier bias circuit |
US6956437B2 (en) * | 2003-12-23 | 2005-10-18 | Agere Systems Inc. | Metal-oxide-semiconductor device having integrated bias circuit |
EP1726091A1 (en) * | 2004-03-09 | 2006-11-29 | Nokia Corporation | Temperature compensating circuit |
US7034618B2 (en) | 2004-03-09 | 2006-04-25 | Nokia Corporation | Temperature compensating circuit |
US7255476B2 (en) * | 2004-04-14 | 2007-08-14 | International Business Machines Corporation | On chip temperature measuring and monitoring circuit and method |
US7489191B2 (en) | 2007-06-08 | 2009-02-10 | General Electric Company | Circuit and method for reducing bias noise in amplifier circuits |
JP5124292B2 (ja) * | 2008-01-10 | 2013-01-23 | ルネサスエレクトロニクス株式会社 | 電力スイッチ回路 |
US8786355B2 (en) * | 2011-11-10 | 2014-07-22 | Qualcomm Incorporated | Low-power voltage reference circuit |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5772429A (en) * | 1980-10-22 | 1982-05-06 | Toshiba Corp | Semiconductor integrated circuit device |
FR2649841B1 (fr) * | 1989-07-17 | 1994-10-14 | Sgs Thomson Microelectronics | Circuit de commande de grille d'un transistor mos |
US5045822A (en) * | 1990-04-10 | 1991-09-03 | Pacific Monolithics | Active power splitter |
US5027082A (en) * | 1990-05-01 | 1991-06-25 | Microwave Modules & Devices, Inc. | Solid state RF power amplifier having improved efficiency and reduced distortion |
EP0854568B1 (en) * | 1993-01-08 | 2001-05-30 | Sony Corporation | Monolithic microwave integrated circuit |
US5808496A (en) * | 1993-05-19 | 1998-09-15 | Texas Instruments Incorporated | Low current comparator with hysteresis |
JPH0946141A (ja) * | 1995-07-27 | 1997-02-14 | Nec Eng Ltd | バイアス回路 |
US6150852A (en) * | 1999-01-14 | 2000-11-21 | Qualcomm Incorporated | Active differential to single-ended converter |
-
1999
- 1999-01-25 SE SE9900210A patent/SE516012C2/sv not_active IP Right Cessation
- 1999-02-26 TW TW088102938A patent/TW427026B/zh not_active IP Right Cessation
- 1999-12-30 CN CNB998158240A patent/CN1196252C/zh not_active Expired - Lifetime
- 1999-12-30 CA CA002359679A patent/CA2359679A1/en not_active Abandoned
- 1999-12-30 JP JP2000595421A patent/JP2002535907A/ja active Pending
- 1999-12-30 WO PCT/SE1999/002504 patent/WO2000044089A1/en active IP Right Grant
- 1999-12-30 DE DE69934828T patent/DE69934828T2/de not_active Expired - Lifetime
- 1999-12-30 AU AU23349/00A patent/AU2334900A/en not_active Abandoned
- 1999-12-30 KR KR1020017008749A patent/KR100580748B1/ko active IP Right Grant
- 1999-12-30 EP EP99967050A patent/EP1153475B1/en not_active Expired - Lifetime
-
2000
- 2000-01-24 US US09/489,947 patent/US6288596B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2002535907A (ja) | 2002-10-22 |
TW427026B (en) | 2001-03-21 |
SE516012C2 (sv) | 2001-11-05 |
SE9900210L (sv) | 2000-07-26 |
WO2000044089A1 (en) | 2000-07-27 |
AU2334900A (en) | 2000-08-07 |
KR20010108087A (ko) | 2001-12-07 |
DE69934828T2 (de) | 2007-08-16 |
EP1153475A1 (en) | 2001-11-14 |
EP1153475B1 (en) | 2007-01-10 |
DE69934828D1 (de) | 2007-02-22 |
US6288596B1 (en) | 2001-09-11 |
KR100580748B1 (ko) | 2006-05-15 |
CA2359679A1 (en) | 2000-07-27 |
CN1333944A (zh) | 2002-01-30 |
CN1196252C (zh) | 2005-04-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |