GB1465499A - Current amplifier - Google Patents

Current amplifier

Info

Publication number
GB1465499A
GB1465499A GB3454074A GB3454074A GB1465499A GB 1465499 A GB1465499 A GB 1465499A GB 3454074 A GB3454074 A GB 3454074A GB 3454074 A GB3454074 A GB 3454074A GB 1465499 A GB1465499 A GB 1465499A
Authority
GB
United Kingdom
Prior art keywords
potential
fet
current
drain
gates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3454074A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1465499A publication Critical patent/GB1465499A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/265—Current mirrors using bipolar transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)

Abstract

1465499 Transistor amplifier RCA CORPORATION 6 Aug 1974 34540/74 Heading H3T A current amplifier has two FETs 307, 311 with their sources connected to a common terminal 301, their gates interconnected and the drain of one 311 connected to the source of a third FET 309 whose gate and drain are respectively connected to an input terminal 303 and an output 305. The dram of FET 307 is direct current connected to the interconnected gates. A potential regulating means 308 is connected between the input 303 and the interconnected gates to maintain the potential between input and gates substantially smaller than V GS of a self-based transistor of the same type as the FETs 307, 309 and 311 but larger than the V DS sat. The potential regulator may be a string of diodes 308-1, 308-2 poled to conduct the drain current. The input current to the amplifier may be derived from an avalanche diode (523, Fig. 5) not shown via resistance (524) to compensate for the thermal charge in the V DS of FET 307 thereby maintaining the output current constant. The number of diodes making up the potential regulator can be chosen to temperature compensate the output current. A second potential regulator 313, which can be a plurality of diodes, may be connected between the drain of FET 307 and the first potential regulator 308 and which in conjunction with the first maintains the potential V GS309 + V 308 substantially equal to V GS309 The drain electrode of FET 307 may be direct coupled to the interconnected gates of 307, 311 (Fig. 3, not shown). The circuit can be used as an active load for a bipolar transistor (509, Fig. 5, not shown) which itself can drive complementary FETs (511, 512) forming an output stage. The circuit can also supply the current for a long-tailed pair (501) and it is possible for the first FET and the potential regulators to be used in common with at least two independent series strings of FETs (531 and 532, 533 and 534) for use in an integrated operational amplifier.
GB3454074A 1973-08-09 1974-08-06 Current amplifier Expired GB1465499A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05387171 USB387171I5 (en) 1973-08-09 1973-08-09

Publications (1)

Publication Number Publication Date
GB1465499A true GB1465499A (en) 1977-02-23

Family

ID=23528780

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3454074A Expired GB1465499A (en) 1973-08-09 1974-08-06 Current amplifier

Country Status (12)

Country Link
US (1) USB387171I5 (en)
JP (1) JPS5342624B2 (en)
AR (1) AR200615A1 (en)
BE (1) BE818633A (en)
BR (1) BR7406412D0 (en)
CA (1) CA1026436A (en)
DE (2) DE2462423C3 (en)
FR (1) FR2240573B1 (en)
GB (1) GB1465499A (en)
IT (1) IT1019817B (en)
NL (1) NL178632C (en)
SE (1) SE398424B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1079519A1 (en) * 1999-08-25 2001-02-28 STMicroelectronics S.r.l. A power rising electronic device

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3973215A (en) * 1975-08-04 1976-08-03 Rca Corporation Current mirror amplifier
US4010425A (en) * 1975-10-02 1977-03-01 Rca Corporation Current mirror amplifier
JPS53135556A (en) * 1977-04-30 1978-11-27 Toshiba Corp Constant current source bias circuit
JPS53135555A (en) * 1977-04-30 1978-11-27 Toshiba Corp Operational amplifier circuit
JPS5422557A (en) * 1977-07-22 1979-02-20 Hitachi Ltd Constant current circuit
DE2840740C2 (en) * 1978-09-19 1983-01-05 Siemens AG, 1000 Berlin und 8000 München MOS-integrated constant current source
JPH0773205B2 (en) * 1983-12-20 1995-08-02 株式会社日立製作所 Level conversion circuit
US4574233A (en) * 1984-03-30 1986-03-04 Tektronix, Inc. High impedance current source
NL8503394A (en) * 1985-12-10 1987-07-01 Philips Nv CURRENT SCREENING FOR A POWER SEMICONDUCTOR DEVICE, PARTICULARLY INTEGRATED INTELLIGENT POWER SEMICONDUCTOR SWITCH FOR PARTICULAR AUTOMOTIVE APPLICATIONS.
NL8701831A (en) * 1987-08-04 1989-03-01 Philips Nv OSCILLATOR WITH FREQUENCY STABILIZERS.
JP6065554B2 (en) * 2012-12-03 2017-01-25 富士電機株式会社 Comparator
US10447208B2 (en) * 2017-12-15 2019-10-15 Raytheon Company Amplifier having a switchable current bias circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry
CH534923A (en) * 1971-08-18 1973-03-15 Bbc Brown Boveri & Cie Power source with high internal resistance
US3775693A (en) * 1971-11-29 1973-11-27 Moskek Co Mosfet logic inverter for integrated circuits
US3813595A (en) * 1973-03-30 1974-05-28 Rca Corp Current source
US3953807A (en) * 1973-08-09 1976-04-27 Rca Corporation Current amplifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1079519A1 (en) * 1999-08-25 2001-02-28 STMicroelectronics S.r.l. A power rising electronic device

Also Published As

Publication number Publication date
BE818633A (en) 1974-12-02
SE7409818L (en) 1975-02-10
DE2438255C3 (en) 1982-08-19
FR2240573A1 (en) 1975-03-07
AR200615A1 (en) 1974-11-22
DE2462423B2 (en) 1979-04-12
BR7406412D0 (en) 1975-05-27
FR2240573B1 (en) 1979-03-09
NL178632C (en) 1986-04-16
CA1026436A (en) 1978-02-14
DE2462423A1 (en) 1977-02-10
DE2438255B2 (en) 1977-04-21
AU7211774A (en) 1976-02-12
JPS5342624B2 (en) 1978-11-13
DE2462423C3 (en) 1982-07-15
SE398424B (en) 1977-12-19
DE2438255A1 (en) 1975-02-20
IT1019817B (en) 1977-11-30
USB387171I5 (en) 1975-01-28
JPS5073549A (en) 1975-06-17
NL7410394A (en) 1975-02-11

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19940805