DE3671314D1 - Halbleiterspeicher mit erhoehter wortleitungspannung. - Google Patents

Halbleiterspeicher mit erhoehter wortleitungspannung.

Info

Publication number
DE3671314D1
DE3671314D1 DE8686901247T DE3671314T DE3671314D1 DE 3671314 D1 DE3671314 D1 DE 3671314D1 DE 8686901247 T DE8686901247 T DE 8686901247T DE 3671314 T DE3671314 T DE 3671314T DE 3671314 D1 DE3671314 D1 DE 3671314D1
Authority
DE
Germany
Prior art keywords
word line
semiconductor memory
line voltage
increased word
increased
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686901247T
Other languages
English (en)
Inventor
Hays Holder
Clayton Kirsch
Harold Stefany
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of DE3671314D1 publication Critical patent/DE3671314D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
DE8686901247T 1985-02-08 1986-01-31 Halbleiterspeicher mit erhoehter wortleitungspannung. Expired - Fee Related DE3671314D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/699,661 US4649523A (en) 1985-02-08 1985-02-08 Semiconductor memory with boosted word line
PCT/US1986/000224 WO1986004726A1 (en) 1985-02-02 1986-01-31 Semiconductor memory with boosted word line

Publications (1)

Publication Number Publication Date
DE3671314D1 true DE3671314D1 (de) 1990-06-21

Family

ID=24810329

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686901247T Expired - Fee Related DE3671314D1 (de) 1985-02-08 1986-01-31 Halbleiterspeicher mit erhoehter wortleitungspannung.

Country Status (8)

Country Link
US (1) US4649523A (de)
EP (1) EP0210260B1 (de)
JP (1) JPS62501807A (de)
KR (1) KR970009099B1 (de)
CA (1) CA1241444A (de)
DE (1) DE3671314D1 (de)
ES (1) ES8800776A1 (de)
WO (1) WO1986004726A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0817032B2 (ja) * 1986-03-12 1996-02-21 株式会社日立製作所 半導体集積回路装置
JPH02247892A (ja) * 1989-03-20 1990-10-03 Fujitsu Ltd ダイナミックランダムアクセスメモリ
JPH0442494A (ja) * 1990-06-08 1992-02-13 Nec Corp Ｍｏｓダイナミックｒａｍ
JPH04129089A (ja) * 1990-09-19 1992-04-30 Mitsubishi Electric Corp ダイナミック型半導体記憶装置
US5289025A (en) * 1991-10-24 1994-02-22 At&T Bell Laboratories Integrated circuit having a boosted node
JPH05151773A (ja) * 1991-11-29 1993-06-18 Mitsubishi Electric Corp ダイナミツク型半導体記憶装置
US5255224A (en) * 1991-12-18 1993-10-19 International Business Machines Corporation Boosted drive system for master/local word line memory architecture
JP3179848B2 (ja) * 1992-03-27 2001-06-25 三菱電機株式会社 半導体記憶装置
JP3413298B2 (ja) * 1994-12-02 2003-06-03 三菱電機株式会社 半導体記憶装置
JPH10228773A (ja) * 1997-02-14 1998-08-25 Hitachi Ltd ダイナミック型ｒａｍ
US5914908A (en) * 1997-03-14 1999-06-22 Hyundai Electronics America Method of operating a boosted wordline
KR100468718B1 (ko) * 2001-12-07 2005-01-29 삼성전자주식회사 외부 리프레쉬 명령을 사용하지 않는 메모리장치의리프레쉬 제어회로 및 그 방법
TWI551044B (zh) * 2015-05-15 2016-09-21 華邦電子股份有限公司 電源閘電路及其電源閘開關控制方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4208730A (en) * 1978-08-07 1980-06-17 Rca Corporation Precharge circuit for memory array
US4291393A (en) * 1980-02-11 1981-09-22 Mostek Corporation Active refresh circuit for dynamic MOS circuits
EP0064569B1 (de) * 1981-05-13 1985-02-27 Ibm Deutschland Gmbh Eingangsschaltung für einen monolithisch integrierten Halbleiterspeicher mit Feldeffekttransistoren
JPS5823387A (ja) * 1981-07-31 1983-02-12 Toshiba Corp Ｍｏｓダイナミツクメモリ
JPS58122692A (ja) * 1982-01-14 1983-07-21 Toshiba Corp 能動昇圧回路
US4449207A (en) * 1982-04-29 1984-05-15 Intel Corporation Byte-wide dynamic RAM with multiplexed internal buses
JPS59188885A (ja) * 1983-04-11 1984-10-26 Hitachi Ltd ダイナミツク型ｒａｍ

Also Published As

Publication number Publication date
CA1241444A (en) 1988-08-30
US4649523A (en) 1987-03-10
KR970009099B1 (ko) 1997-06-05
EP0210260B1 (de) 1990-05-16
EP0210260A1 (de) 1987-02-04
JPH0413796B2 (de) 1992-03-10
ES8800776A1 (es) 1987-12-01
JPS62501807A (ja) 1987-07-16
KR880700428A (ko) 1988-03-15
ES551775A0 (es) 1987-12-01
WO1986004726A1 (en) 1986-08-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee