ES8800776A1 - Memoria semiconductora con linea de palabras reforzadas. - Google Patents
Memoria semiconductora con linea de palabras reforzadas.Info
- Publication number
- ES8800776A1 ES8800776A1 ES551775A ES551775A ES8800776A1 ES 8800776 A1 ES8800776 A1 ES 8800776A1 ES 551775 A ES551775 A ES 551775A ES 551775 A ES551775 A ES 551775A ES 8800776 A1 ES8800776 A1 ES 8800776A1
- Authority
- ES
- Spain
- Prior art keywords
- supply level
- word line
- semiconductor memory
- boosted
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
Abstract
MEMORIA SEMICONDUCTURA CON LINEA DE PALABRAS REFORZADAS. CONSTA DE UNA FORMACION DE CELULAS DE MEMORIA DESTINADAS A FUNCIONAR A UN VOLTAJE DE LA FUENTE DE ALIMENTACION Y DISPUESTAS EN FILAS Y COLUMNAS, COMPRENDIENDO LAS CELULAS DE LA MEMORIA UN TRANSISTOR DE ACCESO Y UN CAPACITOR DE ALMACENAMIENTO DE INFORMACION, EN DONDE UN CONDUCTOR DE COLUMNA SE CONECTA A UNA COLUMNA DE LAS REFERIDAS CELULAS DE LA MEMORIA Y UN CONDUCTOR DE FILA SE CONECTA A UNA FILA DE LAS REFERIDAS CELULAS DE LA MEMORIA; DE MEDIOS DE SELECCION DE FILAS PARA ELEGIR UNA FILA DADA APLICANDO UN VOLTAJE DE FILA AL CONDUCTOR DE FILA CORRESPONDIENTE; Y DE MEDIOS PARA AUMENTAR EL VOLTAJE DE FILA EN EXCESO AL VOLTAJE DE LA FUENTE DE ALIMENTACION DURANTE UN PERIODO INICIAL SIGUIENTE A LA SELECCION, Y PARA REDUCIR DESPUES EL VOLTAJE DE FILA A UN NIVEL IGUAL AL VOLTAJE DE LA FUENTE DE ALIMENTACION.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/699,661 US4649523A (en) | 1985-02-08 | 1985-02-08 | Semiconductor memory with boosted word line |
Publications (2)
Publication Number | Publication Date |
---|---|
ES551775A0 ES551775A0 (es) | 1987-12-01 |
ES8800776A1 true ES8800776A1 (es) | 1987-12-01 |
Family
ID=24810329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES551775A Expired ES8800776A1 (es) | 1985-02-08 | 1986-02-08 | Memoria semiconductora con linea de palabras reforzadas. |
Country Status (8)
Country | Link |
---|---|
US (1) | US4649523A (es) |
EP (1) | EP0210260B1 (es) |
JP (1) | JPS62501807A (es) |
KR (1) | KR970009099B1 (es) |
CA (1) | CA1241444A (es) |
DE (1) | DE3671314D1 (es) |
ES (1) | ES8800776A1 (es) |
WO (1) | WO1986004726A1 (es) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0817032B2 (ja) * | 1986-03-12 | 1996-02-21 | 株式会社日立製作所 | 半導体集積回路装置 |
JPH02247892A (ja) * | 1989-03-20 | 1990-10-03 | Fujitsu Ltd | ダイナミックランダムアクセスメモリ |
JPH0442494A (ja) * | 1990-06-08 | 1992-02-13 | Nec Corp | Mosダイナミックram |
JPH04129089A (ja) * | 1990-09-19 | 1992-04-30 | Mitsubishi Electric Corp | ダイナミック型半導体記憶装置 |
US5289025A (en) * | 1991-10-24 | 1994-02-22 | At&T Bell Laboratories | Integrated circuit having a boosted node |
JPH05151773A (ja) * | 1991-11-29 | 1993-06-18 | Mitsubishi Electric Corp | ダイナミツク型半導体記憶装置 |
US5255224A (en) * | 1991-12-18 | 1993-10-19 | International Business Machines Corporation | Boosted drive system for master/local word line memory architecture |
JP3179848B2 (ja) * | 1992-03-27 | 2001-06-25 | 三菱電機株式会社 | 半導体記憶装置 |
JP3413298B2 (ja) * | 1994-12-02 | 2003-06-03 | 三菱電機株式会社 | 半導体記憶装置 |
JPH10228773A (ja) * | 1997-02-14 | 1998-08-25 | Hitachi Ltd | ダイナミック型ram |
US5914908A (en) * | 1997-03-14 | 1999-06-22 | Hyundai Electronics America | Method of operating a boosted wordline |
KR100468718B1 (ko) * | 2001-12-07 | 2005-01-29 | 삼성전자주식회사 | 외부 리프레쉬 명령을 사용하지 않는 메모리장치의리프레쉬 제어회로 및 그 방법 |
TWI551044B (zh) * | 2015-05-15 | 2016-09-21 | 華邦電子股份有限公司 | 電源閘電路及其電源閘開關控制方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4208730A (en) * | 1978-08-07 | 1980-06-17 | Rca Corporation | Precharge circuit for memory array |
US4291393A (en) * | 1980-02-11 | 1981-09-22 | Mostek Corporation | Active refresh circuit for dynamic MOS circuits |
DE3169127D1 (en) * | 1981-05-13 | 1985-04-04 | Ibm Deutschland | Input circuit for an integrated monolithic semiconductor memory using field effect transistors |
JPS5823387A (ja) * | 1981-07-31 | 1983-02-12 | Toshiba Corp | Mosダイナミツクメモリ |
JPS58122692A (ja) * | 1982-01-14 | 1983-07-21 | Toshiba Corp | 能動昇圧回路 |
US4449207A (en) * | 1982-04-29 | 1984-05-15 | Intel Corporation | Byte-wide dynamic RAM with multiplexed internal buses |
JPS59188885A (ja) * | 1983-04-11 | 1984-10-26 | Hitachi Ltd | ダイナミツク型ram |
-
1985
- 1985-02-08 US US06/699,661 patent/US4649523A/en not_active Expired - Lifetime
-
1986
- 1986-01-31 JP JP61501118A patent/JPS62501807A/ja active Granted
- 1986-01-31 DE DE8686901247T patent/DE3671314D1/de not_active Expired - Fee Related
- 1986-01-31 KR KR1019860700680A patent/KR970009099B1/ko not_active IP Right Cessation
- 1986-01-31 EP EP86901247A patent/EP0210260B1/en not_active Expired - Lifetime
- 1986-01-31 WO PCT/US1986/000224 patent/WO1986004726A1/en active IP Right Grant
- 1986-02-06 CA CA000501280A patent/CA1241444A/en not_active Expired
- 1986-02-08 ES ES551775A patent/ES8800776A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE3671314D1 (de) | 1990-06-21 |
CA1241444A (en) | 1988-08-30 |
ES551775A0 (es) | 1987-12-01 |
JPS62501807A (ja) | 1987-07-16 |
JPH0413796B2 (es) | 1992-03-10 |
WO1986004726A1 (en) | 1986-08-14 |
KR880700428A (ko) | 1988-03-15 |
EP0210260B1 (en) | 1990-05-16 |
US4649523A (en) | 1987-03-10 |
KR970009099B1 (ko) | 1997-06-05 |
EP0210260A1 (en) | 1987-02-04 |
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