DE3587588D1 - Verfahren zur Herstellung einer Halbleitervorrichtung mit einem optischen und einem elektronischen Bauelement. - Google Patents
Verfahren zur Herstellung einer Halbleitervorrichtung mit einem optischen und einem elektronischen Bauelement.Info
- Publication number
- DE3587588D1 DE3587588D1 DE85303488T DE3587588T DE3587588D1 DE 3587588 D1 DE3587588 D1 DE 3587588D1 DE 85303488 T DE85303488 T DE 85303488T DE 3587588 T DE3587588 T DE 3587588T DE 3587588 D1 DE3587588 D1 DE 3587588D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- optical
- semiconductor device
- electronic component
- electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5283—Cross-sectional geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/111—Narrow masking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/161—Tapered edges
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- High Energy & Nuclear Physics (AREA)
- Geometry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Junction Field-Effect Transistors (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59098543A JPS611027A (ja) | 1984-05-18 | 1984-05-18 | 半導体装置の製造方法 |
JP59098542A JPS611026A (ja) | 1984-05-18 | 1984-05-18 | 半導体装置の製造方法 |
JP59098544A JPS611028A (ja) | 1984-05-18 | 1984-05-18 | 半導体装置の製造方法 |
JP59099691A JPH0673389B2 (ja) | 1984-05-19 | 1984-05-19 | 半導体装置の製造方法 |
JP13329884A JPS6114723A (ja) | 1984-06-29 | 1984-06-29 | 半導体メサ・エツチング方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3587588D1 true DE3587588D1 (de) | 1993-10-28 |
Family
ID=27525921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE85303488T Expired - Lifetime DE3587588D1 (de) | 1984-05-18 | 1985-05-17 | Verfahren zur Herstellung einer Halbleitervorrichtung mit einem optischen und einem elektronischen Bauelement. |
Country Status (3)
Country | Link |
---|---|
US (2) | US4719498A (de) |
EP (1) | EP0162677B1 (de) |
DE (1) | DE3587588D1 (de) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3706252A1 (de) * | 1986-02-28 | 1987-09-03 | Canon Kk | Halbleiterfotosensor |
CA1274900A (en) * | 1987-01-05 | 1990-10-02 | Nec Corporation | Field-effect transistor and the same associated with an optical semiconductor device |
EP0282653B1 (de) * | 1987-03-18 | 1995-11-15 | Agfa-Gevaert N.V. | Monolithische Integration einer Matrix von lichtemittierenden Elementen und Steuerelektronik |
DE3887567T2 (de) * | 1987-05-26 | 1994-06-01 | Toshiba Kawasaki Kk | Halbleiterlaservorrichtung und Verfahren zu ihrer Herstellung. |
CA1301897C (en) * | 1988-02-29 | 1992-05-26 | Goro Sasaki | Method for producing an opto-electronic integrated circuit |
CA1281400C (en) * | 1988-03-30 | 1991-03-12 | Ranjit S. Mand | Monolithic integration of optoelectronic and electronic devices |
FR2631488B1 (fr) * | 1988-05-10 | 1990-07-27 | Thomson Hybrides Microondes | Circuit integre hyperfrequence de type planar, comportant au moins un composant mesa, et son procede de fabrication |
GB2222720B (en) * | 1988-09-12 | 1992-03-25 | Stc Plc | Opto-electronic devices |
JPH02164111A (ja) * | 1988-12-17 | 1990-06-25 | Sumitomo Electric Ind Ltd | 半導体装置 |
GB2228616B (en) * | 1989-02-22 | 1992-11-04 | Stc Plc | Opto-electronic device |
US4940672A (en) * | 1989-03-17 | 1990-07-10 | Kopin Corporation | Method of making monolithic integrated III-V type laser devices and silicon devices on silicon |
US5003359A (en) * | 1989-12-29 | 1991-03-26 | David Sarnoff Research Center, Inc. | Optoelectronic integrated circuit |
EP0458409B1 (de) * | 1990-05-23 | 2002-02-20 | Uniphase Opto Holdings, Inc. | Strahlungsemittierende Halbleiteranordnung und Verfahren zum Herstellen derselben |
JPH04260338A (ja) * | 1991-02-14 | 1992-09-16 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5244839A (en) * | 1991-06-18 | 1993-09-14 | Texas Instruments Incorporated | Semiconductor hybrids and method of making same |
US5404372A (en) * | 1991-10-31 | 1995-04-04 | International Business Machines Corporation | Single metal level laser array |
KR950000522B1 (ko) * | 1991-11-25 | 1995-01-24 | 재단법인 한국전자통신연구소 | 수신용 광전집적 소자 및 그 제조방법 |
US5443685A (en) * | 1993-11-01 | 1995-08-22 | At&T Corp. | Composition and method for off-axis growth sites on nonpolar substrates |
US5399884A (en) * | 1993-11-10 | 1995-03-21 | General Electric Company | Radiation imager with single passivation dielectric for transistor and diode |
US5435608A (en) * | 1994-06-17 | 1995-07-25 | General Electric Company | Radiation imager with common passivation dielectric for gate electrode and photosensor |
US5817546A (en) * | 1994-06-23 | 1998-10-06 | Stmicroelectronics S.R.L. | Process of making a MOS-technology power device |
US5444007A (en) * | 1994-08-03 | 1995-08-22 | Kabushiki Kaisha Toshiba | Formation of trenches having different profiles |
KR0172797B1 (ko) * | 1995-10-16 | 1999-03-30 | 김주용 | 레이저 다이오드 및 그 제조방법 |
JPH09213918A (ja) * | 1996-02-01 | 1997-08-15 | Furukawa Electric Co Ltd:The | 光電子集積回路素子 |
US5866936A (en) * | 1997-04-01 | 1999-02-02 | Hewlett-Packard Company | Mesa-structure avalanche photodiode having a buried epitaxial junction |
US6037602A (en) * | 1998-02-13 | 2000-03-14 | C.P. Clare Corporation | Photovoltaic generator circuit and method of making same |
AUPP590798A0 (en) * | 1998-09-14 | 1998-10-08 | Commonwealth Scientific And Industrial Research Organisation | Method of manufacture of high temperature superconductors |
JP2001007380A (ja) * | 1999-06-25 | 2001-01-12 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
KR100532796B1 (ko) * | 2000-07-13 | 2005-12-02 | 시게이트 테크놀로지 엘엘씨 | 디바이스의 형상 패턴화 방법 및 상기 방법에 의해 제조된 mems 디바이스 |
US7831151B2 (en) * | 2001-06-29 | 2010-11-09 | John Trezza | Redundant optical device array |
JP4009106B2 (ja) * | 2001-12-27 | 2007-11-14 | 浜松ホトニクス株式会社 | 半導体受光素子、及びその製造方法 |
JP4109159B2 (ja) * | 2003-06-13 | 2008-07-02 | 浜松ホトニクス株式会社 | 半導体受光素子 |
JP4037809B2 (ja) * | 2003-08-20 | 2008-01-23 | 日本電子株式会社 | イオンミーリング試料作製装置用マスクおよび試料作製装置 |
US7289547B2 (en) * | 2003-10-29 | 2007-10-30 | Cubic Wafer, Inc. | Laser and detector device |
US20080121866A1 (en) * | 2006-11-27 | 2008-05-29 | Ping Yuan | Avalanche photodiode detector |
US10453996B2 (en) | 2012-05-04 | 2019-10-22 | Stc.Unm | Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure |
US10164082B2 (en) * | 2012-05-04 | 2018-12-25 | Stc.Unm | Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure |
KR20210076920A (ko) | 2018-10-19 | 2021-06-24 | 커먼웰쓰 사이언티픽 앤드 인더스트리얼 리서치 오가니제이션 | 다중 스텝 엣지 제조 |
CN111129955B (zh) * | 2019-12-04 | 2021-05-18 | 中国电子科技集团公司第十三研究所 | 一种低温等离子体干法刻蚀方法及其应用 |
CN112670819B (zh) * | 2020-12-03 | 2022-04-01 | 华芯半导体研究院(北京)有限公司 | 基于Nitride斜坡刻蚀的VCSEL芯片及其制备方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55102282A (en) * | 1979-01-29 | 1980-08-05 | Matsushita Electric Ind Co Ltd | Light emitting diode and method of fabricating the same |
JPS56114319A (en) * | 1980-02-14 | 1981-09-08 | Fujitsu Ltd | Method for forming contact hole |
US4292730A (en) * | 1980-03-12 | 1981-10-06 | Harris Corporation | Method of fabricating mesa bipolar memory cell utilizing epitaxial deposition, substrate removal and special metallization |
DE3135462A1 (de) * | 1981-09-08 | 1983-09-01 | AEG-Telefunken Nachrichtentechnik GmbH, 7150 Backnang | Monolithische eingangsstufe eines optischen empfaengers |
JPS59214240A (ja) * | 1983-05-09 | 1984-12-04 | Fujitsu Ltd | 半導体装置の製造方法 |
US4487652A (en) * | 1984-03-30 | 1984-12-11 | Motorola, Inc. | Slope etch of polyimide |
US4484979A (en) * | 1984-04-16 | 1984-11-27 | At&T Bell Laboratories | Two-step anisotropic etching process for patterning a layer without penetrating through an underlying thinner layer |
US4522681A (en) * | 1984-04-23 | 1985-06-11 | General Electric Company | Method for tapered dry etching |
US4560436A (en) * | 1984-07-02 | 1985-12-24 | Motorola, Inc. | Process for etching tapered polyimide vias |
US4554048A (en) * | 1984-10-17 | 1985-11-19 | At&T Bell Laboratories | Anistropic etching |
US4587717A (en) * | 1985-05-02 | 1986-05-13 | Xerox Corporation | LED printing array fabrication method |
US4551394A (en) * | 1984-11-26 | 1985-11-05 | Honeywell Inc. | Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs |
JPS61191336A (ja) * | 1985-02-20 | 1986-08-26 | オムロン株式会社 | 血圧測定装置 |
JPS61208833A (ja) * | 1985-03-13 | 1986-09-17 | Rohm Co Ltd | 半導体装置の製造方法 |
US4676869A (en) * | 1986-09-04 | 1987-06-30 | American Telephone And Telegraph Company At&T Bell Laboratories | Integrated circuits having stepped dielectric regions |
-
1985
- 1985-05-14 US US06/734,319 patent/US4719498A/en not_active Expired - Lifetime
- 1985-05-17 DE DE85303488T patent/DE3587588D1/de not_active Expired - Lifetime
- 1985-05-17 EP EP85303488A patent/EP0162677B1/de not_active Expired - Lifetime
-
1987
- 1987-10-26 US US07/112,305 patent/US5001080A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0162677B1 (de) | 1993-09-22 |
EP0162677A2 (de) | 1985-11-27 |
US5001080A (en) | 1991-03-19 |
US4719498A (en) | 1988-01-12 |
EP0162677A3 (en) | 1987-12-09 |
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