DE3586397T2 - Halbleiterspeicher mit testmustergenerator. - Google Patents

Halbleiterspeicher mit testmustergenerator.

Info

Publication number
DE3586397T2
DE3586397T2 DE8585309305T DE3586397T DE3586397T2 DE 3586397 T2 DE3586397 T2 DE 3586397T2 DE 8585309305 T DE8585309305 T DE 8585309305T DE 3586397 T DE3586397 T DE 3586397T DE 3586397 T2 DE3586397 T2 DE 3586397T2
Authority
DE
Germany
Prior art keywords
test pattern
semiconductor memory
pattern generator
memory cell
cell array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585309305T
Other languages
English (en)
Other versions
DE3586397D1 (de
Inventor
Mitsugu Naitoh
Yoshiyuki Suehiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE3586397D1 publication Critical patent/DE3586397D1/de
Application granted granted Critical
Publication of DE3586397T2 publication Critical patent/DE3586397T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/46—Test trigger logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
DE8585309305T 1984-12-20 1985-12-20 Halbleiterspeicher mit testmustergenerator. Expired - Fee Related DE3586397T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59267460A JPS61145799A (ja) 1984-12-20 1984-12-20 メモリを内蔵した半導体集積回路

Publications (2)

Publication Number Publication Date
DE3586397D1 DE3586397D1 (de) 1992-08-27
DE3586397T2 true DE3586397T2 (de) 1993-03-18

Family

ID=17445145

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585309305T Expired - Fee Related DE3586397T2 (de) 1984-12-20 1985-12-20 Halbleiterspeicher mit testmustergenerator.

Country Status (5)

Country Link
US (1) US4701919A (de)
EP (1) EP0186459B1 (de)
JP (1) JPS61145799A (de)
KR (1) KR900008660B1 (de)
DE (1) DE3586397T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61292755A (ja) * 1985-06-20 1986-12-23 Fujitsu Ltd 半導体集積回路
JPS6221357A (ja) * 1985-07-22 1987-01-29 Toshiba Corp メモリシステム
JPS62140299A (ja) * 1985-12-13 1987-06-23 Advantest Corp パタ−ン発生装置
JPS62195572A (ja) * 1986-02-21 1987-08-28 Mitsubishi Electric Corp 半導体テスト装置
DE3773773D1 (de) * 1986-06-25 1991-11-21 Nec Corp Pruefschaltung fuer eine speichereinrichtung mit willkuerlichem zugriff.
US4872168A (en) * 1986-10-02 1989-10-03 American Telephone And Telegraph Company, At&T Bell Laboratories Integrated circuit with memory self-test
DE3634352A1 (de) * 1986-10-08 1988-04-21 Siemens Ag Verfahren und anordnung zum testen von mega-bit-speicherbausteinen mit beliebigen testmustern im multi-bit-testmodus
JPH0812226B2 (ja) * 1987-01-14 1996-02-07 三菱電機株式会社 半導体装置
US4801869A (en) * 1987-04-27 1989-01-31 International Business Machines Corporation Semiconductor defect monitor for diagnosing processing-induced defects
DE3728521A1 (de) * 1987-08-26 1989-03-09 Siemens Ag Anordnung und verfahren zur feststellung und lokalisierung von fehlerhaften schaltkreisen eines speicherbausteins
JPH02166700A (ja) * 1988-12-15 1990-06-27 Samsung Electron Co Ltd エラー検査及び訂正装置を内蔵した不揮発性半導体メモリ装置
JP2779538B2 (ja) * 1989-04-13 1998-07-23 三菱電機株式会社 半導体集積回路メモリのためのテスト信号発生器およびテスト方法
US5101409A (en) * 1989-10-06 1992-03-31 International Business Machines Corporation Checkboard memory self-test
US5073891A (en) * 1990-02-14 1991-12-17 Intel Corporation Method and apparatus for testing memory
JP2882426B2 (ja) * 1991-03-29 1999-04-12 株式会社アドバンテスト アドレス発生装置
BE1004959A3 (nl) * 1991-06-28 1993-03-02 Bell Telephone Mfg Werkwijze en inrichtingen voor het testen van atm-verbindingen.
JPH05274895A (ja) * 1992-03-26 1993-10-22 Nec Ic Microcomput Syst Ltd 半導体記憶装置
US5490115A (en) * 1994-07-29 1996-02-06 Cypress Semiconductor Corp. Method and apparatus for writing to memory cells in a minimum number of cycles during a memory test operation
US5790559A (en) * 1996-03-29 1998-08-04 Advantest Corporation Semiconductor memory testing apparatus
US6078637A (en) 1998-06-29 2000-06-20 Cypress Semiconductor Corp. Address counter test mode for memory device
JP2000182398A (ja) * 1998-12-15 2000-06-30 Nec Corp 半導体装置及び半導体装置の試験方法
US6728910B1 (en) * 2000-09-20 2004-04-27 Lsi Logic Corporation Memory testing for built-in self-repair system
TW559970B (en) * 2001-04-05 2003-11-01 Kawasaki Microelectronics Inc Test circuit, semiconductor product wafer having the test circuit, and method of monitoring manufacturing process using the test circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3924181A (en) * 1973-10-16 1975-12-02 Hughes Aircraft Co Test circuitry employing a cyclic code generator
JPS573299A (en) * 1980-06-06 1982-01-08 Nec Corp Memory integrated circuit
US4541090A (en) * 1981-06-09 1985-09-10 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device
US4519078A (en) * 1982-09-29 1985-05-21 Storage Technology Corporation LSI self-test method

Also Published As

Publication number Publication date
JPS61145799A (ja) 1986-07-03
JPH0378720B2 (de) 1991-12-16
US4701919A (en) 1987-10-20
DE3586397D1 (de) 1992-08-27
EP0186459B1 (de) 1992-07-22
KR900008660B1 (ko) 1990-11-26
EP0186459A3 (en) 1988-06-08
KR860005446A (ko) 1986-07-23
EP0186459A2 (de) 1986-07-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee