DE3317535C2 - - Google Patents

Info

Publication number
DE3317535C2
DE3317535C2 DE3317535A DE3317535A DE3317535C2 DE 3317535 C2 DE3317535 C2 DE 3317535C2 DE 3317535 A DE3317535 A DE 3317535A DE 3317535 A DE3317535 A DE 3317535A DE 3317535 C2 DE3317535 C2 DE 3317535C2
Authority
DE
Germany
Prior art keywords
thin film
film transistor
substrate
semiconductor layer
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3317535A
Other languages
German (de)
English (en)
Other versions
DE3317535A1 (de
Inventor
Katsumi Tokio/Tokyo Jp Nakagawa
Toshiyuki Yokohama Kanagawa Jp Komatsu
Yutaka Hirai
Satoshi Tokio/Tokyo Jp Omata
Yoshiyuki Yokosuka Kanagawa Jp Osada
Takashi Tokio/Tokyo Jp Nakagiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3317535A1 publication Critical patent/DE3317535A1/de
Application granted granted Critical
Publication of DE3317535C2 publication Critical patent/DE3317535C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon

Landscapes

  • Thin Film Transistor (AREA)
DE19833317535 1982-05-13 1983-05-13 Duennfilmtransistor Granted DE3317535A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57081260A JPS58197775A (ja) 1982-05-13 1982-05-13 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
DE3317535A1 DE3317535A1 (de) 1983-11-17
DE3317535C2 true DE3317535C2 (enExample) 1988-07-21

Family

ID=13741396

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833317535 Granted DE3317535A1 (de) 1982-05-13 1983-05-13 Duennfilmtransistor

Country Status (3)

Country Link
US (1) US4814842A (enExample)
JP (1) JPS58197775A (enExample)
DE (1) DE3317535A1 (enExample)

Families Citing this family (44)

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US4950614A (en) * 1984-05-15 1990-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of making a tandem type semiconductor photoelectric conversion device
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
JP3125981B2 (ja) * 1984-05-18 2001-01-22 株式会社半導体エネルギー研究所 絶縁ゲート型電界効果半導体装置
JPS6114762A (ja) * 1984-06-29 1986-01-22 Toshiba Corp 薄膜電界効果トランジスタの製造方法
JPS6148979A (ja) * 1984-08-17 1986-03-10 Seiko Epson Corp 多結晶シリコン薄膜トランジスタの製造方法
GB2215126B (en) * 1988-02-19 1990-11-14 Gen Electric Co Plc Process for manufacturing a thin film transistor
US5245452A (en) * 1988-06-24 1993-09-14 Matsushita Electronics Corporation Active matric drive liquid crystal display device using polycrystalline silicon pixel electrodes
US4998146A (en) * 1989-05-24 1991-03-05 Xerox Corporation High voltage thin film transistor
JPH04152640A (ja) * 1990-10-17 1992-05-26 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型半導体装置の作製方法
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950013784B1 (ko) * 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) * 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5680229A (en) * 1991-03-27 1997-10-21 Canon Kabushiki Kaisha Photoelectric conversion apparatus with band gap variation in the thickness direction
US7081938B1 (en) * 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US6700133B1 (en) * 1994-03-11 2004-03-02 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US5796116A (en) * 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
JP2813147B2 (ja) 1995-02-14 1998-10-22 三菱電機株式会社 微小異物の分析方法、分析装置およびこれらを用いる半導体素子もしくは液晶表示素子の製法
JP3125983B2 (ja) * 1996-11-29 2001-01-22 株式会社半導体エネルギー研究所 絶縁ゲート型電界効果半導体装置の作製方法
JP3125982B2 (ja) * 1996-11-29 2001-01-22 株式会社半導体エネルギー研究所 絶縁ゲート型電界効果半導体装置
JP3998765B2 (ja) 1997-09-04 2007-10-31 シャープ株式会社 多結晶半導体層の製造方法及び半導体装置の評価方法
US6391108B2 (en) * 1997-12-12 2002-05-21 Canon Kabushiki Kaisha Liquid phase growth method of silicon crystal, method of producing solar cell, and liquid phase growth apparatus
JP4332244B2 (ja) * 1998-10-30 2009-09-16 シャープ株式会社 Ｍｏｓ型容量素子
US6303972B1 (en) 1998-11-25 2001-10-16 Micron Technology, Inc. Device including a conductive layer protected against oxidation
US7067861B1 (en) 1998-11-25 2006-06-27 Micron Technology, Inc. Device and method for protecting against oxidation of a conductive layer in said device
DE19935046C2 (de) * 1999-07-26 2001-07-12 Schott Glas Plasma-CVD-Verfahren und Vorrichtung zur Herstellung einer mikrokristallinen Si:H-Schicht auf einem Substrat sowie deren Verwendung
US7161203B2 (en) * 2004-06-04 2007-01-09 Micron Technology, Inc. Gated field effect device comprising gate dielectric having different K regions
RU2285319C1 (ru) * 2005-05-20 2006-10-10 Общество с ограниченной ответственностью "Производственно коммерческая фирма "Автоматика" Шкаф комплектного распределительного устройства и выдвижной элемент шкафа комплектного распределительного устройства
EP2813294A1 (en) 2005-08-30 2014-12-17 Advanced Technology Materials, Inc. Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
US7616179B2 (en) * 2006-03-31 2009-11-10 Canon Kabushiki Kaisha Organic EL display apparatus and driving method therefor
WO2008039461A2 (en) * 2006-09-27 2008-04-03 Thinsilicon Corp. Back contact device for photovoltaic cells and method of manufacturing a back contact
WO2008150769A2 (en) * 2007-05-31 2008-12-11 Thinsilicon Corporation Photovoltaic device and method of manufacturing photovoltaic devices
JP2012504350A (ja) * 2008-09-29 2012-02-16 シンシリコン・コーポレーション 一体的に統合されたソーラーモジュール
WO2010129163A2 (en) * 2009-05-06 2010-11-11 Thinsilicon Corporation Photovoltaic cells and methods to enhance light trapping in semiconductor layer stacks
WO2010144421A2 (en) * 2009-06-10 2010-12-16 Thinsilicon Corporation Photovoltaic modules and methods of manufacturing photovoltaic modules having multiple semiconductor layer stacks
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode
CN102668016B (zh) 2009-10-27 2016-02-24 安格斯公司 离子注入系统及方法
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
KR101903445B1 (ko) * 2012-01-10 2018-10-05 삼성디스플레이 주식회사 반도체 장치 및 이의 제조 방법
US20130307075A1 (en) * 2012-05-15 2013-11-21 International Business Machines Corporation Crystalline thin-film transistors and methods of forming same
US9064924B2 (en) 2012-05-24 2015-06-23 International Business Machines Corporation Heterojunction bipolar transistors with intrinsic interlayers
US8889529B2 (en) * 2012-05-24 2014-11-18 International Business Machines Corporation Heterojunction bipolar transistors with thin epitaxial contacts
US10224430B1 (en) 2017-12-06 2019-03-05 International Business Machines Corporation Thin film transistors with epitaxial source/drain and drain field relief

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293447A (enExample) * 1962-05-31
US3290569A (en) * 1964-02-14 1966-12-06 Rca Corp Tellurium thin film field effect solid state electrical devices
DE2107555B2 (de) * 1971-02-17 1972-08-31 F. Hoffmann-La Roche & Co., Ag, Basel (Schweiz) Ultraschallbildaufnahmeanordnung
JPS5226177A (en) * 1975-08-25 1977-02-26 Toshiba Corp Semi-conductor unit
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4409605A (en) * 1978-03-16 1983-10-11 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4176365A (en) * 1978-05-08 1979-11-27 Sperry Rand Corporation Josephson tunnel junction device with hydrogenated amorphous silicon, germanium or silicon-germanium alloy tunneling barrier
JPS5550663A (en) * 1978-10-07 1980-04-12 Shunpei Yamazaki Semiconductor device and method of fabricating the same
JPS5617083A (en) * 1979-07-20 1981-02-18 Hitachi Ltd Semiconductor device and its manufacture
US4409607A (en) * 1980-07-25 1983-10-11 Xerox Corporation Normally-on enhancement mode MOSFET with negative threshold gating
DE3241959A1 (de) * 1981-11-13 1983-05-26 Canon K.K., Tokyo Halbleiterbauelement
GB8413385D0 (en) * 1984-05-24 1984-06-27 Recordati Chem Pharm Carboxylic acid derivatives

Also Published As

Publication number Publication date
DE3317535A1 (de) 1983-11-17
JPS58197775A (ja) 1983-11-17
US4814842A (en) 1989-03-21

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Legal Events

Date Code Title Description
8181 Inventor (new situation)

Free format text: NAKAGAWA, KATSUMI, TOKYO, JP KOMATSU, TOSHIYUKI, YOKOHAMA, KANAGAWA, JP HIRAI, YUTAKA OMATA, SATOSHI, TOKYO, JP OSADA, YOSHIYUKI, YOKOSUKA, KANAGAWA, JP NAKAGIRI, TAKASHI, TOKYO, JP

8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition