DE3041232A1 - Halbleiteranordnung mit einer anzahl in reihe geschalteter dioden und verfahren zu deren herstellung - Google Patents

Halbleiteranordnung mit einer anzahl in reihe geschalteter dioden und verfahren zu deren herstellung

Info

Publication number
DE3041232A1
DE3041232A1 DE19803041232 DE3041232A DE3041232A1 DE 3041232 A1 DE3041232 A1 DE 3041232A1 DE 19803041232 DE19803041232 DE 19803041232 DE 3041232 A DE3041232 A DE 3041232A DE 3041232 A1 DE3041232 A1 DE 3041232A1
Authority
DE
Germany
Prior art keywords
semiconductor
layer
electrode
highly doped
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19803041232
Other languages
German (de)
English (en)
Inventor
Dominique Paris Boccon-Gibod
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE3041232A1 publication Critical patent/DE3041232A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19803041232 1979-11-07 1980-11-03 Halbleiteranordnung mit einer anzahl in reihe geschalteter dioden und verfahren zu deren herstellung Withdrawn DE3041232A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7927480A FR2469804A1 (fr) 1979-11-07 1979-11-07 Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant

Publications (1)

Publication Number Publication Date
DE3041232A1 true DE3041232A1 (de) 1981-05-14

Family

ID=9231399

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803041232 Withdrawn DE3041232A1 (de) 1979-11-07 1980-11-03 Halbleiteranordnung mit einer anzahl in reihe geschalteter dioden und verfahren zu deren herstellung

Country Status (6)

Country Link
JP (1) JPS5676583A (enExample)
CA (1) CA1165009A (enExample)
DE (1) DE3041232A1 (enExample)
FR (1) FR2469804A1 (enExample)
GB (1) GB2062961A (enExample)
NL (1) NL8006019A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07107940B2 (ja) * 1983-01-28 1995-11-15 三洋電機株式会社 シヨツトキバリヤダイオ−ド装置
WO2007142603A1 (en) * 2006-06-09 2007-12-13 Agency For Science, Technology And Research An integrated shadow mask and method of fabrication thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2001468A1 (de) * 1970-01-14 1971-07-22 Philips Nv Verfahren zur Herstellung von Halbleiterbauelementen
GB1300033A (en) * 1970-02-13 1972-12-20 Texas Instruments Inc Integrated circuits

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1244759A (en) * 1968-12-11 1971-09-02 Associated Semiconductor Mft Improvements in and relating to methods of manufacturing semiconductor devices
FR2335957A1 (fr) * 1975-12-17 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur monolithique comprenant un pont de redressement
FR2363896A2 (fr) * 1976-09-01 1978-03-31 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant un pont de redressement
JPS5439582A (en) * 1977-09-02 1979-03-27 Nec Corp Integrated composite diode device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2001468A1 (de) * 1970-01-14 1971-07-22 Philips Nv Verfahren zur Herstellung von Halbleiterbauelementen
GB1300033A (en) * 1970-02-13 1972-12-20 Texas Instruments Inc Integrated circuits

Also Published As

Publication number Publication date
FR2469804A1 (fr) 1981-05-22
NL8006019A (nl) 1981-06-01
GB2062961A (en) 1981-05-28
JPS5676583A (en) 1981-06-24
FR2469804B1 (enExample) 1983-04-29
CA1165009A (en) 1984-04-03

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8130 Withdrawal