GB2062961A - Integrated series-connected diodes - Google Patents

Integrated series-connected diodes Download PDF

Info

Publication number
GB2062961A
GB2062961A GB8035263A GB8035263A GB2062961A GB 2062961 A GB2062961 A GB 2062961A GB 8035263 A GB8035263 A GB 8035263A GB 8035263 A GB8035263 A GB 8035263A GB 2062961 A GB2062961 A GB 2062961A
Authority
GB
United Kingdom
Prior art keywords
region
layer
semiconductor
highly doped
doped layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB8035263A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB2062961A publication Critical patent/GB2062961A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
GB8035263A 1979-11-07 1980-11-03 Integrated series-connected diodes Withdrawn GB2062961A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7927480A FR2469804A1 (fr) 1979-11-07 1979-11-07 Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant

Publications (1)

Publication Number Publication Date
GB2062961A true GB2062961A (en) 1981-05-28

Family

ID=9231399

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8035263A Withdrawn GB2062961A (en) 1979-11-07 1980-11-03 Integrated series-connected diodes

Country Status (6)

Country Link
JP (1) JPS5676583A (enExample)
CA (1) CA1165009A (enExample)
DE (1) DE3041232A1 (enExample)
FR (1) FR2469804A1 (enExample)
GB (1) GB2062961A (enExample)
NL (1) NL8006019A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007142603A1 (en) * 2006-06-09 2007-12-13 Agency For Science, Technology And Research An integrated shadow mask and method of fabrication thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07107940B2 (ja) * 1983-01-28 1995-11-15 三洋電機株式会社 シヨツトキバリヤダイオ−ド装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1244759A (en) * 1968-12-11 1971-09-02 Associated Semiconductor Mft Improvements in and relating to methods of manufacturing semiconductor devices
DE2001468A1 (de) * 1970-01-14 1971-07-22 Philips Nv Verfahren zur Herstellung von Halbleiterbauelementen
DE2106540A1 (de) * 1970-02-13 1971-08-19 Texas Instruments Inc Halbleiterschaltung und Verfahren zu ihrer Herstellung
FR2335957A1 (fr) * 1975-12-17 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur monolithique comprenant un pont de redressement
FR2363896A2 (fr) * 1976-09-01 1978-03-31 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant un pont de redressement
JPS5439582A (en) * 1977-09-02 1979-03-27 Nec Corp Integrated composite diode device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007142603A1 (en) * 2006-06-09 2007-12-13 Agency For Science, Technology And Research An integrated shadow mask and method of fabrication thereof

Also Published As

Publication number Publication date
FR2469804A1 (fr) 1981-05-22
NL8006019A (nl) 1981-06-01
JPS5676583A (en) 1981-06-24
DE3041232A1 (de) 1981-05-14
FR2469804B1 (enExample) 1983-04-29
CA1165009A (en) 1984-04-03

Similar Documents

Publication Publication Date Title
EP0029334B1 (en) Series-connected combination of two-terminal semiconductor devices and their fabrication
US3932226A (en) Method of electrically interconnecting semiconductor elements
US4536469A (en) Semiconductor structures and manufacturing methods
US3970486A (en) Methods of producing a semiconductor device and a semiconductor device produced by said method
US4355457A (en) Method of forming a mesa in a semiconductor device with subsequent separation into individual devices
US3602982A (en) Method of manufacturing a semiconductor device and device manufactured by said method
US4379001A (en) Method of making semiconductor devices
GB1219986A (en) Improvements in or relating to the production of semiconductor bodies
US4197631A (en) Method of manufacturing semiconductor components
US3616348A (en) Process for isolating semiconductor elements
US4596070A (en) Interdigitated IMPATT devices
US4596069A (en) Three dimensional processing for monolithic IMPATTs
US4692791A (en) Monolithic IMPATT with stripline leads
US4035830A (en) Composite semiconductor circuit and method of manufacture
US3735482A (en) Method of making an mos transistor including a gate insulator layer of aluminum oxide and the article so produced
US3513022A (en) Method of fabricating semiconductor devices
GB2062961A (en) Integrated series-connected diodes
US3631307A (en) Semiconductor structures having improved high-frequency response and power dissipation capabilities
EP0646960B1 (en) Semiconductor device with a semiconductor element provided in a mesa structure
US3956820A (en) Method of manufacturing a semiconductor device having a lead bonded to a surface thereof
US5144413A (en) Semiconductor structures and manufacturing methods
US4672415A (en) Power thyristor on a substrate
US4095330A (en) Composite semiconductor integrated circuit and method of manufacture
JPS5914906B2 (ja) 電界効果トランジスタの製造方法
US4320571A (en) Stencil mask process for high power, high speed controlled rectifiers

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)