JPS5676583A - Semiconductor device and method of fabricating same - Google Patents
Semiconductor device and method of fabricating sameInfo
- Publication number
- JPS5676583A JPS5676583A JP15477080A JP15477080A JPS5676583A JP S5676583 A JPS5676583 A JP S5676583A JP 15477080 A JP15477080 A JP 15477080A JP 15477080 A JP15477080 A JP 15477080A JP S5676583 A JPS5676583 A JP S5676583A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- fabricating same
- fabricating
- same
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7927480A FR2469804A1 (fr) | 1979-11-07 | 1979-11-07 | Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5676583A true JPS5676583A (en) | 1981-06-24 |
Family
ID=9231399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15477080A Pending JPS5676583A (en) | 1979-11-07 | 1980-11-05 | Semiconductor device and method of fabricating same |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5676583A (enExample) |
| CA (1) | CA1165009A (enExample) |
| DE (1) | DE3041232A1 (enExample) |
| FR (1) | FR2469804A1 (enExample) |
| GB (1) | GB2062961A (enExample) |
| NL (1) | NL8006019A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59138385A (ja) * | 1983-01-28 | 1984-08-08 | Sanyo Electric Co Ltd | シヨツトキバリヤダイオ−ド装置 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007142603A1 (en) * | 2006-06-09 | 2007-12-13 | Agency For Science, Technology And Research | An integrated shadow mask and method of fabrication thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5439582A (en) * | 1977-09-02 | 1979-03-27 | Nec Corp | Integrated composite diode device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1244759A (en) * | 1968-12-11 | 1971-09-02 | Associated Semiconductor Mft | Improvements in and relating to methods of manufacturing semiconductor devices |
| DE2001468A1 (de) * | 1970-01-14 | 1971-07-22 | Philips Nv | Verfahren zur Herstellung von Halbleiterbauelementen |
| DE2106540A1 (de) * | 1970-02-13 | 1971-08-19 | Texas Instruments Inc | Halbleiterschaltung und Verfahren zu ihrer Herstellung |
| FR2335957A1 (fr) * | 1975-12-17 | 1977-07-15 | Radiotechnique Compelec | Dispositif semiconducteur monolithique comprenant un pont de redressement |
| FR2363896A2 (fr) * | 1976-09-01 | 1978-03-31 | Radiotechnique Compelec | Dispositif semi-conducteur monolithique comprenant un pont de redressement |
-
1979
- 1979-11-07 FR FR7927480A patent/FR2469804A1/fr active Granted
-
1980
- 1980-10-30 CA CA000363613A patent/CA1165009A/en not_active Expired
- 1980-11-03 GB GB8035263A patent/GB2062961A/en not_active Withdrawn
- 1980-11-03 DE DE19803041232 patent/DE3041232A1/de not_active Withdrawn
- 1980-11-04 NL NL8006019A patent/NL8006019A/nl not_active Application Discontinuation
- 1980-11-05 JP JP15477080A patent/JPS5676583A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5439582A (en) * | 1977-09-02 | 1979-03-27 | Nec Corp | Integrated composite diode device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59138385A (ja) * | 1983-01-28 | 1984-08-08 | Sanyo Electric Co Ltd | シヨツトキバリヤダイオ−ド装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2469804A1 (fr) | 1981-05-22 |
| NL8006019A (nl) | 1981-06-01 |
| GB2062961A (en) | 1981-05-28 |
| DE3041232A1 (de) | 1981-05-14 |
| FR2469804B1 (enExample) | 1983-04-29 |
| CA1165009A (en) | 1984-04-03 |
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