CA1165009A - Semiconductor device comprising a number of series-arranged diodes and method of manufacturing same - Google Patents

Semiconductor device comprising a number of series-arranged diodes and method of manufacturing same

Info

Publication number
CA1165009A
CA1165009A CA000363613A CA363613A CA1165009A CA 1165009 A CA1165009 A CA 1165009A CA 000363613 A CA000363613 A CA 000363613A CA 363613 A CA363613 A CA 363613A CA 1165009 A CA1165009 A CA 1165009A
Authority
CA
Canada
Prior art keywords
region
layer
highly doped
semiconductor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000363613A
Other languages
English (en)
French (fr)
Inventor
Dominique Boccon-Gibod
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA1165009A publication Critical patent/CA1165009A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895Local interconnects; Local pads, as exemplified by patent document EP0896365
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/764Air gaps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
CA000363613A 1979-11-07 1980-10-30 Semiconductor device comprising a number of series-arranged diodes and method of manufacturing same Expired CA1165009A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7927480A FR2469804A1 (fr) 1979-11-07 1979-11-07 Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant
FR7927480 1979-11-07

Publications (1)

Publication Number Publication Date
CA1165009A true CA1165009A (en) 1984-04-03

Family

ID=9231399

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000363613A Expired CA1165009A (en) 1979-11-07 1980-10-30 Semiconductor device comprising a number of series-arranged diodes and method of manufacturing same

Country Status (6)

Country Link
JP (1) JPS5676583A (enExample)
CA (1) CA1165009A (enExample)
DE (1) DE3041232A1 (enExample)
FR (1) FR2469804A1 (enExample)
GB (1) GB2062961A (enExample)
NL (1) NL8006019A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07107940B2 (ja) * 1983-01-28 1995-11-15 三洋電機株式会社 シヨツトキバリヤダイオ−ド装置
WO2007142603A1 (en) * 2006-06-09 2007-12-13 Agency For Science, Technology And Research An integrated shadow mask and method of fabrication thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1244759A (en) * 1968-12-11 1971-09-02 Associated Semiconductor Mft Improvements in and relating to methods of manufacturing semiconductor devices
DE2001468A1 (de) * 1970-01-14 1971-07-22 Philips Nv Verfahren zur Herstellung von Halbleiterbauelementen
DE2106540A1 (de) * 1970-02-13 1971-08-19 Texas Instruments Inc Halbleiterschaltung und Verfahren zu ihrer Herstellung
FR2335957A1 (fr) * 1975-12-17 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur monolithique comprenant un pont de redressement
FR2363896A2 (fr) * 1976-09-01 1978-03-31 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant un pont de redressement
JPS5439582A (en) * 1977-09-02 1979-03-27 Nec Corp Integrated composite diode device

Also Published As

Publication number Publication date
FR2469804A1 (fr) 1981-05-22
NL8006019A (nl) 1981-06-01
GB2062961A (en) 1981-05-28
JPS5676583A (en) 1981-06-24
DE3041232A1 (de) 1981-05-14
FR2469804B1 (enExample) 1983-04-29

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Legal Events

Date Code Title Description
MKEX Expiry