FR2469804A1 - Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant - Google Patents

Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant

Info

Publication number
FR2469804A1
FR2469804A1 FR7927480A FR7927480A FR2469804A1 FR 2469804 A1 FR2469804 A1 FR 2469804A1 FR 7927480 A FR7927480 A FR 7927480A FR 7927480 A FR7927480 A FR 7927480A FR 2469804 A1 FR2469804 A1 FR 2469804A1
Authority
FR
France
Prior art keywords
semi
series
semiconductor device
producing
resulting therefrom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7927480A
Other languages
English (en)
French (fr)
Other versions
FR2469804B1 (enExample
Inventor
Dominique Boccon-Gibod
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique et de Physique Appliquee filed Critical Laboratoires dElectronique et de Physique Appliquee
Priority to FR7927480A priority Critical patent/FR2469804A1/fr
Priority to CA000363613A priority patent/CA1165009A/en
Priority to DE19803041232 priority patent/DE3041232A1/de
Priority to GB8035263A priority patent/GB2062961A/en
Priority to NL8006019A priority patent/NL8006019A/nl
Priority to JP15477080A priority patent/JPS5676583A/ja
Publication of FR2469804A1 publication Critical patent/FR2469804A1/fr
Application granted granted Critical
Publication of FR2469804B1 publication Critical patent/FR2469804B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7927480A 1979-11-07 1979-11-07 Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant Granted FR2469804A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7927480A FR2469804A1 (fr) 1979-11-07 1979-11-07 Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant
CA000363613A CA1165009A (en) 1979-11-07 1980-10-30 Semiconductor device comprising a number of series-arranged diodes and method of manufacturing same
DE19803041232 DE3041232A1 (de) 1979-11-07 1980-11-03 Halbleiteranordnung mit einer anzahl in reihe geschalteter dioden und verfahren zu deren herstellung
GB8035263A GB2062961A (en) 1979-11-07 1980-11-03 Integrated series-connected diodes
NL8006019A NL8006019A (nl) 1979-11-07 1980-11-04 Halfgeleiderinrichting omvattende een aantal in serie geschakelde dioden, en werkwijze ter vervaardiging daarvan.
JP15477080A JPS5676583A (en) 1979-11-07 1980-11-05 Semiconductor device and method of fabricating same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7927480A FR2469804A1 (fr) 1979-11-07 1979-11-07 Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant

Publications (2)

Publication Number Publication Date
FR2469804A1 true FR2469804A1 (fr) 1981-05-22
FR2469804B1 FR2469804B1 (enExample) 1983-04-29

Family

ID=9231399

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7927480A Granted FR2469804A1 (fr) 1979-11-07 1979-11-07 Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant

Country Status (6)

Country Link
JP (1) JPS5676583A (enExample)
CA (1) CA1165009A (enExample)
DE (1) DE3041232A1 (enExample)
FR (1) FR2469804A1 (enExample)
GB (1) GB2062961A (enExample)
NL (1) NL8006019A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07107940B2 (ja) * 1983-01-28 1995-11-15 三洋電機株式会社 シヨツトキバリヤダイオ−ド装置
WO2007142603A1 (en) * 2006-06-09 2007-12-13 Agency For Science, Technology And Research An integrated shadow mask and method of fabrication thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2025892A1 (enExample) * 1968-12-11 1970-09-11 Philips Nv
FR2335957A1 (fr) * 1975-12-17 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur monolithique comprenant un pont de redressement
FR2363896A2 (fr) * 1976-09-01 1978-03-31 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant un pont de redressement

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2001468A1 (de) * 1970-01-14 1971-07-22 Philips Nv Verfahren zur Herstellung von Halbleiterbauelementen
DE2106540A1 (de) * 1970-02-13 1971-08-19 Texas Instruments Inc Halbleiterschaltung und Verfahren zu ihrer Herstellung
JPS5439582A (en) * 1977-09-02 1979-03-27 Nec Corp Integrated composite diode device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2025892A1 (enExample) * 1968-12-11 1970-09-11 Philips Nv
FR2335957A1 (fr) * 1975-12-17 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur monolithique comprenant un pont de redressement
FR2363896A2 (fr) * 1976-09-01 1978-03-31 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant un pont de redressement

Also Published As

Publication number Publication date
NL8006019A (nl) 1981-06-01
GB2062961A (en) 1981-05-28
JPS5676583A (en) 1981-06-24
DE3041232A1 (de) 1981-05-14
FR2469804B1 (enExample) 1983-04-29
CA1165009A (en) 1984-04-03

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Legal Events

Date Code Title Description
ST Notification of lapse