FR2441924A1 - Dispositif semi-conducteur a capacite variable et circuit multiplicateur de frequence comprenant ce dispositif - Google Patents

Dispositif semi-conducteur a capacite variable et circuit multiplicateur de frequence comprenant ce dispositif

Info

Publication number
FR2441924A1
FR2441924A1 FR7832260A FR7832260A FR2441924A1 FR 2441924 A1 FR2441924 A1 FR 2441924A1 FR 7832260 A FR7832260 A FR 7832260A FR 7832260 A FR7832260 A FR 7832260A FR 2441924 A1 FR2441924 A1 FR 2441924A1
Authority
FR
France
Prior art keywords
series
grown
arsenide
variable capacity
frequency multiplier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7832260A
Other languages
English (en)
Inventor
John Magarshack
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique et de Physique Appliquee filed Critical Laboratoires dElectronique et de Physique Appliquee
Priority to FR7832260A priority Critical patent/FR2441924A1/fr
Publication of FR2441924A1 publication Critical patent/FR2441924A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/05—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source using non-linear capacitance, e.g. varactor diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/16—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes
    • H03B19/18—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes and elements comprising distributed inductance and capacitance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

DISPOSITIF SEMI-CONDUCTEUR A CAPACITE VARIABLE CONSTITUE D'UNE SUCCESSION DE DIODES A JONCTION RELIEES ELECTRIQUEMENT EN SERIE ET FORMEES CHACUNE PAR LA MISE EN PRESENCE DE COUCHES DE CONDUCTIVITE ALTERNATIVEMENT DE TYPE P ET N. CHAQUE DIODE EST SEPAREE DES DIODES ADJACENTES PAR UNE COUCHE DE CONDUCTIVITE DE TYPE N. L'ENSEMBLE DE CES DIODES EST OBTENU PAR CROISSANCE EPITAXIALE OU AUTRE, REALISEE DE PREFERENCE SUR UN CRISTAL D'ARSENIURE DE GALLIUM. APPLICATION: CIRCUITS MULTIPLICATEURS DE FREQUENCE DANS LE DOMAINE DES PUISSANCES ELEVEES.
FR7832260A 1978-11-15 1978-11-15 Dispositif semi-conducteur a capacite variable et circuit multiplicateur de frequence comprenant ce dispositif Withdrawn FR2441924A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7832260A FR2441924A1 (fr) 1978-11-15 1978-11-15 Dispositif semi-conducteur a capacite variable et circuit multiplicateur de frequence comprenant ce dispositif

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7832260A FR2441924A1 (fr) 1978-11-15 1978-11-15 Dispositif semi-conducteur a capacite variable et circuit multiplicateur de frequence comprenant ce dispositif

Publications (1)

Publication Number Publication Date
FR2441924A1 true FR2441924A1 (fr) 1980-06-13

Family

ID=9214924

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7832260A Withdrawn FR2441924A1 (fr) 1978-11-15 1978-11-15 Dispositif semi-conducteur a capacite variable et circuit multiplicateur de frequence comprenant ce dispositif

Country Status (1)

Country Link
FR (1) FR2441924A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3662287A (en) * 1971-02-24 1972-05-09 Us Navy Voltage controlled oscillator multiplier
US3878001A (en) * 1970-07-13 1975-04-15 Siemens Ag Method of making a hypersensitive semiconductor tuning diode
FR2249447A1 (fr) * 1973-10-30 1975-05-23 Gen Electric

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3878001A (en) * 1970-07-13 1975-04-15 Siemens Ag Method of making a hypersensitive semiconductor tuning diode
US3662287A (en) * 1971-02-24 1972-05-09 Us Navy Voltage controlled oscillator multiplier
FR2249447A1 (fr) * 1973-10-30 1975-05-23 Gen Electric

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/68 *
EXRV/70 *

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Legal Events

Date Code Title Description
ST Notification of lapse