DE3038375C2 - Verfahren zur Herstellung eines NTC-Thermistors mit Karbid-Widerstandsdünnschichten - Google Patents

Verfahren zur Herstellung eines NTC-Thermistors mit Karbid-Widerstandsdünnschichten

Info

Publication number
DE3038375C2
DE3038375C2 DE3038375A DE3038375A DE3038375C2 DE 3038375 C2 DE3038375 C2 DE 3038375C2 DE 3038375 A DE3038375 A DE 3038375A DE 3038375 A DE3038375 A DE 3038375A DE 3038375 C2 DE3038375 C2 DE 3038375C2
Authority
DE
Germany
Prior art keywords
gas
volume
proportion
vol
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3038375A
Other languages
German (de)
English (en)
Other versions
DE3038375A1 (de
Inventor
Ikuo Nara Kobayashi
Takeshi Nagai
Kazushi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP13147479A external-priority patent/JPS5655008A/ja
Priority claimed from JP15103179A external-priority patent/JPS5673407A/ja
Priority claimed from JP55085541A external-priority patent/JPS6028125B2/ja
Priority claimed from JP8555380A external-priority patent/JPS5711813A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE3038375A1 publication Critical patent/DE3038375A1/de
Application granted granted Critical
Publication of DE3038375C2 publication Critical patent/DE3038375C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49085—Thermally variable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49087—Resistor making with envelope or housing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49099—Coating resistive material on a base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49101—Applying terminal

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
DE3038375A 1979-10-11 1980-10-10 Verfahren zur Herstellung eines NTC-Thermistors mit Karbid-Widerstandsdünnschichten Expired DE3038375C2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP13147479A JPS5655008A (en) 1979-10-11 1979-10-11 Method of trimming thin film
JP15103179A JPS5673407A (en) 1979-11-20 1979-11-20 Method of manufacturing carbide film resistor
JP55085541A JPS6028125B2 (ja) 1980-06-23 1980-06-23 炭化物膜抵抗体の製造方法
JP8555380A JPS5711813A (en) 1980-06-23 1980-06-23 Preparation of carbide film resistor

Publications (2)

Publication Number Publication Date
DE3038375A1 DE3038375A1 (de) 1981-04-23
DE3038375C2 true DE3038375C2 (de) 1983-12-15

Family

ID=27467126

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3038375A Expired DE3038375C2 (de) 1979-10-11 1980-10-10 Verfahren zur Herstellung eines NTC-Thermistors mit Karbid-Widerstandsdünnschichten

Country Status (6)

Country Link
US (1) US4359372A (show.php)
AU (1) AU524439B2 (show.php)
CA (1) CA1143865A (show.php)
DE (1) DE3038375C2 (show.php)
FR (1) FR2467472A1 (show.php)
GB (1) GB2061002B (show.php)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3108969C2 (de) * 1981-03-10 1986-01-09 Draloric Electronic GmbH, 8672 Selb Elektrothermische Füllstandsanzeigevorrichtung
US4424507A (en) * 1981-04-10 1984-01-03 Matsushita Electric Industrial Co., Ltd. Thin film thermistor
JPS57180101A (en) * 1981-04-30 1982-11-06 Hitachi Ltd High temperature thermistor
US4806900A (en) * 1986-09-26 1989-02-21 Naoji Fujimori Thermistor and method for producing the same
DE3784705T2 (de) * 1986-10-24 1993-06-17 Anritsu Corp Mit einem duennschichtleiter versehener elektrischer widerstand und kraftsensor.
JPH0810645B2 (ja) * 1988-04-21 1996-01-31 松下電器産業株式会社 薄膜サーミスタ
JPH0625695B2 (ja) * 1988-09-07 1994-04-06 綜合警備保障株式会社 赤外線検出素子
JPH02159716A (ja) * 1988-12-14 1990-06-19 Shin Etsu Chem Co Ltd Ｘ線リソグラフィー用ＳｉＣ膜およびその成膜方法
JP2695000B2 (ja) * 1989-04-11 1997-12-24 住友電気工業株式会社 サーミスタ及びその製造方法
US5075690A (en) * 1989-12-18 1991-12-24 Xerox Corporation Temperature sensor for an ink jet printhead
EP0468429B1 (en) * 1990-07-25 1996-02-28 Matsushita Electric Industrial Co., Ltd. SiC thin-film thermistor and method of producing it.
US5190631A (en) * 1991-01-09 1993-03-02 The Carborundum Company Process for forming transparent silicon carbide films
JPH05299705A (ja) * 1992-04-16 1993-11-12 Kobe Steel Ltd ダイヤモンド薄膜電子デバイス及びその製造方法
US5363084A (en) * 1993-02-26 1994-11-08 Lake Shore Cryotronics, Inc. Film resistors having trimmable electrodes
US5367285A (en) * 1993-02-26 1994-11-22 Lake Shore Cryotronics, Inc. Metal oxy-nitride resistance films and methods of making the same
CA2180665A1 (en) * 1994-01-21 1995-07-27 Irving B. Ruppel Silicon carbide sputtering target
JPH10261507A (ja) * 1997-03-18 1998-09-29 Murata Mfg Co Ltd サーミスタ素子
US6480093B1 (en) 2000-01-26 2002-11-12 Yang-Yuan Chen Composite film resistors and method of making the same
US20020067683A1 (en) * 2000-12-05 2002-06-06 Imation Corp. Temperature sensitive patterned media transducers
JP3929705B2 (ja) * 2001-02-05 2007-06-13 ユーディナデバイス株式会社 半導体装置及びチップキャリア
WO2004043372A2 (en) * 2002-11-13 2004-05-27 Proportional Technologies, Inc. Boron coated straw neutron detector
US7306967B1 (en) 2003-05-28 2007-12-11 Adsem, Inc. Method of forming high temperature thermistors
US7812705B1 (en) * 2003-12-17 2010-10-12 Adsem, Inc. High temperature thermistor probe
US7292132B1 (en) * 2003-12-17 2007-11-06 Adsem, Inc. NTC thermistor probe
JP4826882B2 (ja) * 2005-05-18 2011-11-30 株式会社 アイアイエスマテリアル スクラップシリコンの選別及び分析方法
US8330116B2 (en) * 2008-06-16 2012-12-11 Proportional Technologies, Inc. Long range neutron-gamma point source detection and imaging using rotating detector
US8118486B2 (en) * 2008-09-04 2012-02-21 AGlobal Tech, LLC Very high speed temperature probe
US8569710B2 (en) * 2009-06-02 2013-10-29 Proportional Technologies, Inc. Optimized detection of fission neutrons using boron coated straw detectors distributed in moderator material
WO2011143512A1 (en) 2010-05-12 2011-11-17 Lacy Jeffrey L Neutron detectors for active interrogation
US9218946B2 (en) 2010-05-13 2015-12-22 Proportional Technologies, Inc. Sealed boron coated straw detectors
CN204010866U (zh) * 2014-07-28 2014-12-10 肇庆爱晟电子科技有限公司 一种复合电极热敏芯片
DE102016101248A1 (de) * 2015-11-02 2017-05-04 Epcos Ag Sensorelement und Verfahren zur Herstellung eines Sensorelements
DE102017113401A1 (de) * 2017-06-19 2018-12-20 Epcos Ag Schichtwiderstand und Dünnfilmsensor
TWI830049B (zh) * 2020-08-31 2024-01-21 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 藉由脈衝/連續CVD或原子層沈積形成催化劑Pt奈米點
CN118129931A (zh) * 2024-01-31 2024-06-04 北京中科格励微科技有限公司 隔离型温度传感器芯体及其制作方法、隔离型温度传感器

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NL87348C (show.php) * 1954-03-19 1900-01-01
US2916460A (en) * 1956-06-28 1959-12-08 Carborundum Co Silicon carbide resistance bodies and methods of making same
FR1483744A (fr) * 1965-12-08 1967-06-09 Electronique & Automatisme Sa Couche résistive mince perfectionnée
NL6701216A (show.php) * 1967-01-26 1968-07-29
DE2031701C3 (de) * 1970-06-26 1974-01-03 Danfoss A/S, Nordborg (Daenemark) Heißleiter
US4015230A (en) * 1975-02-03 1977-03-29 Matsushita Electric Industrial Co., Ltd. Humidity sensitive ceramic resistor
US4001586A (en) * 1975-05-09 1977-01-04 Plessey Incorporated Thick film sensor and infrared detector
US4200970A (en) * 1977-04-14 1980-05-06 Milton Schonberger Method of adjusting resistance of a thermistor
DE2919191A1 (de) * 1978-05-17 1979-11-22 Rotring Werke Riepe Kg Verfahren zum aufbringen einer beschichtung aus abriebfestem material auf rohre, insbesondere schreibroehrchen fuer roehrchenschreiber

Also Published As

Publication number Publication date
CA1143865A (en) 1983-03-29
FR2467472B1 (show.php) 1983-11-04
AU524439B2 (en) 1982-09-16
AU6309380A (en) 1981-04-16
DE3038375A1 (de) 1981-04-23
GB2061002A (en) 1981-05-07
US4359372A (en) 1982-11-16
FR2467472A1 (fr) 1981-04-17
GB2061002B (en) 1983-10-19

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee