DE3035260C2 - Dynamischer monolithischer Speicher - Google Patents
Dynamischer monolithischer SpeicherInfo
- Publication number
- DE3035260C2 DE3035260C2 DE3035260A DE3035260A DE3035260C2 DE 3035260 C2 DE3035260 C2 DE 3035260C2 DE 3035260 A DE3035260 A DE 3035260A DE 3035260 A DE3035260 A DE 3035260A DE 3035260 C2 DE3035260 C2 DE 3035260C2
- Authority
- DE
- Germany
- Prior art keywords
- voltage
- lines
- nmos
- word line
- pmos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 claims description 83
- 210000004027 cell Anatomy 0.000 description 65
- 230000005669 field effect Effects 0.000 description 24
- 239000010410 layer Substances 0.000 description 14
- 230000008859 change Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 210000000352 storage cell Anatomy 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
Landscapes
- Engineering & Computer Science (AREA)
- Databases & Information Systems (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11940379A JPS5644189A (en) | 1979-09-19 | 1979-09-19 | Semiconductor memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3035260A1 DE3035260A1 (de) | 1981-04-02 |
| DE3035260C2 true DE3035260C2 (de) | 1985-05-15 |
Family
ID=14760615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3035260A Expired DE3035260C2 (de) | 1979-09-19 | 1980-09-18 | Dynamischer monolithischer Speicher |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4399519A (OSRAM) |
| JP (1) | JPS5644189A (OSRAM) |
| DE (1) | DE3035260C2 (OSRAM) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5153254A (en) * | 1977-03-17 | 1992-10-06 | Applied Elastomerics, Inc. | Reusable lint remover |
| JPS56110252A (en) * | 1980-02-05 | 1981-09-01 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory device |
| US5732037A (en) * | 1982-05-13 | 1998-03-24 | Hitachi, Ltd. | Semiconductor memory |
| JPS57186289A (en) * | 1981-05-13 | 1982-11-16 | Hitachi Ltd | Semiconductor memory |
| US4883986A (en) * | 1981-05-19 | 1989-11-28 | Tokyo Shibaura Denki Kabushiki Kaisha | High density semiconductor circuit using CMOS transistors |
| JPS58153294A (ja) * | 1982-03-04 | 1983-09-12 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPS5994861A (ja) * | 1982-11-24 | 1984-05-31 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
| JPS6052997A (ja) * | 1983-09-02 | 1985-03-26 | Toshiba Corp | 半導体記憶装置 |
| US4570176A (en) * | 1984-04-16 | 1986-02-11 | At&T Bell Laboratories | CMOS Cell array with transistor isolation |
| US5072275A (en) * | 1986-02-28 | 1991-12-10 | Fairchild Semiconductor Corporation | Small contactless RAM cell |
| US5100824A (en) * | 1985-04-01 | 1992-03-31 | National Semiconductor Corporation | Method of making small contactless RAM cell |
| US5340762A (en) * | 1985-04-01 | 1994-08-23 | Fairchild Semiconductor Corporation | Method of making small contactless RAM cell |
| US4975756A (en) * | 1985-05-01 | 1990-12-04 | Texas Instruments Incorporated | SRAM with local interconnect |
| JPS61296598A (ja) * | 1985-06-21 | 1986-12-27 | Mitsubishi Electric Corp | Ｍｏｓダイナミツクｒａｍのダミ−ワ−ド線駆動回路 |
| US4570238A (en) * | 1985-06-24 | 1986-02-11 | Motorola, Inc. | Selectable write current source for bipolar rams |
| FR2600809B1 (fr) * | 1986-06-24 | 1988-08-19 | Eurotechnique Sa | Dispositif de detection du fonctionnement du systeme de lecture d'une cellule-memoire eprom ou eeprom |
| US5063168A (en) * | 1986-07-02 | 1991-11-05 | National Semiconductor Corporation | Process for making bipolar transistor with polysilicon stringer base contact |
| US4974046A (en) * | 1986-07-02 | 1990-11-27 | National Seimconductor Corporation | Bipolar transistor with polysilicon stringer base contact |
| US4853897A (en) * | 1986-12-10 | 1989-08-01 | Kabushiki Kaisha Toshiba | Complementary semiconductor memory device |
| JP2525455B2 (ja) * | 1988-05-30 | 1996-08-21 | 富士通株式会社 | 半導体メモリ装置 |
| JP2583606B2 (ja) * | 1989-05-16 | 1997-02-19 | 富士通株式会社 | センスアンプ回路 |
| JP2787033B2 (ja) * | 1991-11-11 | 1998-08-13 | セイコープレシジョン株式会社 | Ｅｌ素子 |
| US5361232A (en) * | 1992-11-18 | 1994-11-01 | Unisys Corporation | CMOS static RAM testability |
| US5511164A (en) * | 1995-03-01 | 1996-04-23 | Unisys Corporation | Method and apparatus for determining the source and nature of an error within a computer system |
| JP3710845B2 (ja) * | 1995-06-21 | 2005-10-26 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4003036A (en) * | 1975-10-23 | 1977-01-11 | American Micro-Systems, Inc. | Single IGFET memory cell with buried storage element |
| JPS5333542A (en) * | 1976-09-10 | 1978-03-29 | Hitachi Ltd | Signal detection circuit |
| JPS53134337A (en) * | 1977-03-25 | 1978-11-22 | Hitachi Ltd | Sense circuit |
-
1979
- 1979-09-19 JP JP11940379A patent/JPS5644189A/ja active Granted
-
1980
- 1980-09-17 US US06/188,244 patent/US4399519A/en not_active Expired - Lifetime
- 1980-09-18 DE DE3035260A patent/DE3035260C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3035260A1 (de) | 1981-04-02 |
| JPS6233674B2 (OSRAM) | 1987-07-22 |
| US4399519A (en) | 1983-08-16 |
| JPS5644189A (en) | 1981-04-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3035260C2 (de) | Dynamischer monolithischer Speicher | |
| DE2650479C2 (de) | Speicheranordnung mit Ladungsspeicherzellen | |
| DE2659248C3 (de) | Dynamischer Speicher mit wahlfreiem Zugriff | |
| DE68914084T2 (de) | Halbleiterspeicheranordnung mit ferroelektrische Kondensatoren enthaltenden Zellen. | |
| DE69826955T2 (de) | Nichtflüchtige Halbleiterspeicheranordnung | |
| DE69427214T2 (de) | Halbleiterspeicheranordnung mit Spannung-Erhöhungsschaltung | |
| DE2601622C3 (de) | wertspeicheranordnung | |
| DE69129138T2 (de) | DRAM mit einem Wortleitungsbetriebsschaltungssystem | |
| DE3742492C2 (OSRAM) | ||
| DE69322747T2 (de) | Halbleiterspeicheranordnung | |
| DE69120448T2 (de) | Halbleiterspeicheranordnungen von dynamischem Typus | |
| DE2712735C2 (OSRAM) | ||
| DE4406035A1 (de) | Halbleiterspeichereinrichtung | |
| DE4014117A1 (de) | Elektrisch loeschbarer programmierbarer festwertspeicher mit nand-zellenbloecken | |
| DE3802363A1 (de) | Halbleiterspeicher | |
| DE3705875C2 (OSRAM) | ||
| DE4324651C2 (de) | Boosting-Schaltung und Verwendung der Boosting-Schaltung | |
| DE69934853T2 (de) | Halbleiterspeicheranordnung | |
| DE69423329T2 (de) | Halbleiterspeicher mit sehr schnellem Leseverstärker | |
| DE3838961C2 (OSRAM) | ||
| DE102006022867B4 (de) | Ausleseschaltung für oder in einem ROM-Speicher und ROM-Speicher | |
| EP1094468A1 (de) | Anordnung zur Selbstreferenzierung von ferroelektrischen Speicherzellen | |
| DE4132826A1 (de) | Elektrisch loeschbarer programmierbarer festwertspeicher mit blockloeschfunktion | |
| DE2628383A1 (de) | Monolithischer halbleiterspeicher fuer wahlfreien zugriff mit abfuehlschaltungen | |
| DE3200976C2 (de) | Integrierte Halbleiterschaltung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |