DE3026026A1 - Halbleiterelement und verfahren zu seiner herstellung - Google Patents

Halbleiterelement und verfahren zu seiner herstellung

Info

Publication number
DE3026026A1
DE3026026A1 DE19803026026 DE3026026A DE3026026A1 DE 3026026 A1 DE3026026 A1 DE 3026026A1 DE 19803026026 DE19803026026 DE 19803026026 DE 3026026 A DE3026026 A DE 3026026A DE 3026026 A1 DE3026026 A1 DE 3026026A1
Authority
DE
Germany
Prior art keywords
layer
oxide layer
aluminum oxide
semiconductor element
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19803026026
Other languages
German (de)
English (en)
Other versions
DE3026026C2 (https=
Inventor
Masaharu Aoyama
Toshio Yonezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8771779A external-priority patent/JPS5612740A/ja
Priority claimed from JP8771879A external-priority patent/JPS6058587B2/ja
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of DE3026026A1 publication Critical patent/DE3026026A1/de
Application granted granted Critical
Publication of DE3026026C2 publication Critical patent/DE3026026C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/6929—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/6936—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing two or more metal elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69397—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing two or more metal elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4405—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H10W20/4407—Aluminium alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/937—Hillock prevention

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE19803026026 1979-07-11 1980-07-09 Halbleiterelement und verfahren zu seiner herstellung Granted DE3026026A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8771779A JPS5612740A (en) 1979-07-11 1979-07-11 Semiconductor device and manufacture thereof
JP8771879A JPS6058587B2 (ja) 1979-07-11 1979-07-11 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE3026026A1 true DE3026026A1 (de) 1981-01-22
DE3026026C2 DE3026026C2 (https=) 1990-12-06

Family

ID=26428965

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803026026 Granted DE3026026A1 (de) 1979-07-11 1980-07-09 Halbleiterelement und verfahren zu seiner herstellung

Country Status (2)

Country Link
US (2) US4433004A (https=)
DE (1) DE3026026A1 (https=)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3208650A1 (de) * 1981-03-20 1982-10-07 Hitachi, Ltd., Tokyo Integrierte halbleiterschaltung
FR2510307A1 (fr) * 1981-07-24 1983-01-28 Hitachi Ltd Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif
EP0103879A1 (de) * 1982-09-21 1984-03-28 Siemens Aktiengesellschaft Verfahren zum Herstellen einer monolithisch integrierten Schaltung
EP0122631A3 (en) * 1983-04-15 1986-09-10 Hitachi, Ltd. Electronic device having a multi-layer wiring structure
DE3637513A1 (de) * 1986-11-04 1988-05-11 Semikron Elektronik Gmbh Verfahren zum herstellen feinstrukturierter kontaktelektroden von leistungs-halbleiterbauelementen
EP0239833A3 (en) * 1986-03-06 1990-02-07 Nec Corporation Integrated circuit device with an improved interconnection line
EP0462700A3 (en) * 1990-05-21 1992-03-18 Motorola Inc Process for the selective encapsulation of an electrically conductive structure in a semiconductor device
DE4303401A1 (en) * 1992-02-17 1993-08-19 Mitsubishi Electric Corp Semiconductor device e.g. DRAM mfr. - involves hole-free passive oxide film prodn. on bonding pad
US5851920A (en) * 1996-01-22 1998-12-22 Motorola, Inc. Method of fabrication of metallization system

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686111A (en) * 1982-05-27 1987-08-11 Motorola, Inc. Passivated and low scatter acoustic wave devices and method thereof
US4520554A (en) * 1983-02-10 1985-06-04 Rca Corporation Method of making a multi-level metallization structure for semiconductor device
US4713682A (en) * 1984-04-25 1987-12-15 Honeywell Inc. Dielectric barrier material
US4814285A (en) * 1985-09-23 1989-03-21 Harris Corp. Method for forming planarized interconnect level using selective deposition and ion implantation
JPH0611076B2 (ja) * 1985-10-08 1994-02-09 三菱電機株式会社 半導体装置の製造方法
US4790920A (en) * 1985-12-20 1988-12-13 Intel Corporation Method for depositing an al2 O3 cap layer on an integrated circuit substrate
JPH0656883B2 (ja) * 1986-03-03 1994-07-27 鐘淵化学工業株式会社 半導体装置
DE3610036A1 (de) * 1986-03-21 1987-09-24 Schering Ag Kontaktieren von mikroelektronischen schaltungen
US4767724A (en) * 1986-03-27 1988-08-30 General Electric Company Unframed via interconnection with dielectric etch stop
JPH0687464B2 (ja) * 1986-12-17 1994-11-02 日本電装株式会社 アルミニウム合金配線装置およびその製造方法
US5147484A (en) * 1987-10-19 1992-09-15 International Business Machines Corporation Method for producing multi-layer ceramic substrates with oxidation resistant metalization
US5227314A (en) * 1989-03-22 1993-07-13 At&T Bell Laboratories Method of making metal conductors having a mobile inn getterer therein
US5016081A (en) * 1989-03-22 1991-05-14 At&T Bell Laboratories Mobile ion getterer for metal conductors
JPH03233972A (ja) * 1990-02-08 1991-10-17 Matsushita Electron Corp 半導体装置用電極およびその製造方法
JPH04226054A (ja) * 1990-03-02 1992-08-14 Toshiba Corp 多層配線構造を有する半導体装置及びその製造方法
US5470769A (en) * 1990-03-27 1995-11-28 Goldstar Co., Ltd. Process for the preparation of a thin film transistor
JPH04174541A (ja) * 1990-03-28 1992-06-22 Nec Corp 半導体集積回路及びその製造方法
JPH05198575A (ja) * 1991-05-01 1993-08-06 Kobe Steel Ltd 耐食性ＡｌまたはＡｌ合金材
US5495121A (en) * 1991-09-30 1996-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5406121A (en) * 1992-07-31 1995-04-11 Nec Corporation Semiconductor device having improved interconnection wiring structure
KR0131179B1 (ko) * 1993-02-22 1998-04-14 슌뻬이 야마자끼 전자회로 제조프로세스
US5679982A (en) * 1993-02-24 1997-10-21 Intel Corporation Barrier against metal diffusion
US5393703A (en) * 1993-11-12 1995-02-28 Motorola, Inc. Process for forming a conductive layer for semiconductor devices
US5382447A (en) * 1993-12-02 1995-01-17 International Business Machines Corporation Process for fabricating improved multilayer interconnect systems
US5434104A (en) * 1994-03-02 1995-07-18 Vlsi Technology, Inc. Method of using corrosion prohibiters in aluminum alloy films
US5711858A (en) * 1994-04-12 1998-01-27 International Business Machines Corporation Process for depositing a conductive thin film upon an integrated circuit substrate
US6335062B1 (en) * 1994-09-13 2002-01-01 The United States Of America As Represented By The Secretary Of The Navy Reactive oxygen-assisted ion implantation into metals and products made therefrom
JP3105409B2 (ja) * 1994-10-24 2000-10-30 シャープ株式会社 金属配線基板および半導体装置およびそれらの製造方法
JPH0917785A (ja) * 1995-06-30 1997-01-17 Sony Corp 半導体装置のアルミニウム系金属配線
US6040613A (en) * 1996-01-19 2000-03-21 Micron Technology, Inc. Antireflective coating and wiring line stack
JPH09296111A (ja) * 1996-04-30 1997-11-18 Toray Dow Corning Silicone Co Ltd マイクロエマルジョンおよび繊維処理剤
US5913146A (en) * 1997-03-18 1999-06-15 Lucent Technologies Inc. Semiconductor device having aluminum contacts or vias and method of manufacture therefor
US6657376B1 (en) 1999-06-01 2003-12-02 Micron Technology, Inc. Electron emission devices and field emission display devices having buffer layer of microcrystalline silicon
US6650043B1 (en) 1999-07-20 2003-11-18 Micron Technology, Inc. Multilayer conductor structure for use in field emission display
US7052350B1 (en) * 1999-08-26 2006-05-30 Micron Technology, Inc. Field emission device having insulated column lines and method manufacture
US6710525B1 (en) 1999-10-19 2004-03-23 Candescent Technologies Corporation Electrode structure and method for forming electrode structure for a flat panel display
US7371467B2 (en) 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
US6942929B2 (en) 2002-01-08 2005-09-13 Nianci Han Process chamber having component with yttrium-aluminum coating
US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US20060013942A1 (en) * 2004-07-16 2006-01-19 Muffoletto Barry C Method for improving electrical conductivity of metals, metal alloys and metal oxides by ion beam implantation
US8237235B2 (en) * 2009-04-14 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-ceramic multilayer structure
CN104185365B (zh) * 2013-05-23 2018-06-26 比亚迪股份有限公司 一种线路板及其制备方法
DE102014211464A1 (de) * 2014-06-16 2015-12-17 Robert Bosch Gmbh Halbleitermodul mit einer elektrisch isolierten Wärmesenke
US9953940B2 (en) * 2015-06-26 2018-04-24 International Business Machines Corporation Corrosion resistant aluminum bond pad structure

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2032320A1 (de) * 1969-06-30 1971-01-07 International Business Machines Corp Armonk NY (V St A ) Verfahren zur Verbesserung der Haftung von leitendem Material auf nichtleitendem Substratmatenal
DE2045633A1 (de) * 1969-09-25 1971-05-13 Motorola Inc Verfahren zur Herstellung einer Halbleiteranordnung
US3702427A (en) * 1971-02-22 1972-11-07 Fairchild Camera Instr Co Electromigration resistant metallization for integrated circuits, structure and process
DE2313106A1 (de) * 1972-03-29 1973-10-11 Ibm Verfahren zum herstellen eines elektrischen verbindungssystems
DE2358495A1 (de) * 1973-01-12 1974-07-18 Hitachi Ltd Verfahren zur herstellung von substraten mit verbundenen leiterschichten
DE2621956A1 (de) * 1975-05-19 1976-12-02 Nat Semiconductor Corp Verfahren zur passivierung einer aluminiumschicht auf einem halbleiter- schaltungsbaustein
US4017890A (en) * 1975-10-24 1977-04-12 International Business Machines Corporation Intermetallic compound layer in thin films for improved electromigration resistance
US4060828A (en) * 1975-08-22 1977-11-29 Hitachi, Ltd. Semiconductor device having multi-layer wiring structure with additional through-hole interconnection

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL87258C (https=) * 1969-01-15
DE1910736C3 (de) * 1969-03-03 1978-05-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von gegeneinander elektrisch isolierten, aus Aluminium bestehenden Leiterbahnen und Anwendung des Verfahrens
US3716469A (en) * 1970-12-17 1973-02-13 Cogar Corp Fabrication method for making an aluminum alloy having a high resistance to electromigration
JPS4842034A (https=) * 1971-09-27 1973-06-19
NZ179621A (en) * 1975-01-06 1978-04-28 Ciba Geigy Synergistic pharmaceutical compositions containing a betareceptor blocking compound and l-tryptophene or a salt there of
JPS5223281A (en) * 1975-08-15 1977-02-22 Nec Corp Method of manufacturing semiconductor device
JPS52117551A (en) * 1976-03-29 1977-10-03 Mitsubishi Electric Corp Semiconductor device
JPS5317287A (en) * 1976-08-02 1978-02-17 Toshiba Corp Production of semiconductor device
DE2649773A1 (de) * 1976-10-29 1978-05-11 Bosch Gmbh Robert Halbleiteranordnung
JPS5533057A (en) * 1978-08-30 1980-03-08 Yamamoto Electric Ind Co Ltd Motor speed controller
JPS55120162A (en) * 1979-03-12 1980-09-16 Fujitsu Ltd Semiconductor device
JPS55138859A (en) * 1979-04-16 1980-10-30 Nec Corp Multilayer wiring type semiconductor device
EP0042926A1 (en) * 1980-07-01 1982-01-06 Rockwell International Corporation Aluminum to aluminum ohmic contacts, multilevel interconnections

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2032320A1 (de) * 1969-06-30 1971-01-07 International Business Machines Corp Armonk NY (V St A ) Verfahren zur Verbesserung der Haftung von leitendem Material auf nichtleitendem Substratmatenal
DE2045633A1 (de) * 1969-09-25 1971-05-13 Motorola Inc Verfahren zur Herstellung einer Halbleiteranordnung
US3702427A (en) * 1971-02-22 1972-11-07 Fairchild Camera Instr Co Electromigration resistant metallization for integrated circuits, structure and process
DE2313106A1 (de) * 1972-03-29 1973-10-11 Ibm Verfahren zum herstellen eines elektrischen verbindungssystems
DE2358495A1 (de) * 1973-01-12 1974-07-18 Hitachi Ltd Verfahren zur herstellung von substraten mit verbundenen leiterschichten
DE2621956A1 (de) * 1975-05-19 1976-12-02 Nat Semiconductor Corp Verfahren zur passivierung einer aluminiumschicht auf einem halbleiter- schaltungsbaustein
US4060828A (en) * 1975-08-22 1977-11-29 Hitachi, Ltd. Semiconductor device having multi-layer wiring structure with additional through-hole interconnection
US4017890A (en) * 1975-10-24 1977-04-12 International Business Machines Corporation Intermetallic compound layer in thin films for improved electromigration resistance

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
"RCA Review" Bd. 37, H. 4(Dezember 1976), S. 483-490 *
"Wissenschaftliche Berichte AEG-Telefunken", Bd. 48(1975), H. 2/3, S. 46-54 *
Vermileya, D.A. und Vedder, W.: Inhibition of the Aluminium + Water Reaction. In: Transactions of the faraday Society, Bd. 66, Teil. 10, Oktober 1970, S. 2644-2654 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3208650A1 (de) * 1981-03-20 1982-10-07 Hitachi, Ltd., Tokyo Integrierte halbleiterschaltung
FR2510307A1 (fr) * 1981-07-24 1983-01-28 Hitachi Ltd Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif
EP0103879A1 (de) * 1982-09-21 1984-03-28 Siemens Aktiengesellschaft Verfahren zum Herstellen einer monolithisch integrierten Schaltung
EP0122631A3 (en) * 1983-04-15 1986-09-10 Hitachi, Ltd. Electronic device having a multi-layer wiring structure
EP0239833A3 (en) * 1986-03-06 1990-02-07 Nec Corporation Integrated circuit device with an improved interconnection line
DE3637513A1 (de) * 1986-11-04 1988-05-11 Semikron Elektronik Gmbh Verfahren zum herstellen feinstrukturierter kontaktelektroden von leistungs-halbleiterbauelementen
EP0462700A3 (en) * 1990-05-21 1992-03-18 Motorola Inc Process for the selective encapsulation of an electrically conductive structure in a semiconductor device
DE4303401A1 (en) * 1992-02-17 1993-08-19 Mitsubishi Electric Corp Semiconductor device e.g. DRAM mfr. - involves hole-free passive oxide film prodn. on bonding pad
US5565378A (en) * 1992-02-17 1996-10-15 Mitsubishi Denki Kabushiki Kaisha Process of passivating a semiconductor device bonding pad by immersion in O2 or O3 solution
DE4303401C2 (de) * 1992-02-17 1998-06-04 Mitsubishi Electric Corp Verfahren zum Herstellen einer Halbleitervorrichtung
US5851920A (en) * 1996-01-22 1998-12-22 Motorola, Inc. Method of fabrication of metallization system

Also Published As

Publication number Publication date
US4561009A (en) 1985-12-24
DE3026026C2 (https=) 1990-12-06
US4433004A (en) 1984-02-21

Similar Documents

Publication Publication Date Title
DE3026026A1 (de) Halbleiterelement und verfahren zu seiner herstellung
DE69226411T2 (de) Herstellung eines leitenden Gebietes in elektronischen Vorrichtungen
DE1589810C3 (de) Passiviertes Halbleiterbauelement und Verfahren zu seiner Herstellung
DE2839234C2 (https=)
DE4414729C2 (de) Werkstoff für die Herstellung eines Leiterrahmens und Leierrahmen für Halbleiterbauelemente
DE3241895A1 (de) Verfahren zur passivierung der oberflaeche eines halbleiterbauteils
DE69221430T2 (de) Verfahren zur Bildung eines Metalleiters für ein Halbleiterbauelement
DE2355567B2 (de) Verfahren zur herstellung metallischer leitungssysteme auf halbleiteranordnungen
DE2401333A1 (de) Verfahren zur herstellung von isolierfilmen auf verbindungsschichten
DE2033532C3 (de) Halbleiteranordnung mit einer Passivierungsschicht aus Siliziumdioxid
DE4010618A1 (de) Halbleitervorrichtung und verfahren zu ihrer herstellung
DE3122437A1 (de) Verfahren zum herstellen eines mos-bauelements
DE2509912C3 (de) Elektronische Dünnfilmschaltung
DE3414781A1 (de) Vielschicht-verbindungsstruktur einer halbleitereinrichtung
DE2132034A1 (de) Verfahren zur Herstellung von Zwischenverbindungen fuer elektrische Baueinheiten auf Festkoerpern
DE2230171A1 (de) Verfahren zum herstellen von streifenleitern fuer halbleiterbauteile
DE2458734A1 (de) Verfahren zur herstellung hochohmiger widerstaende in einer integrierten halbleiterschaltung
EP0177845A1 (de) Integrierter Schaltkreis mit Mehrlagenverdrahtung und Verfahren zu seiner Herstellung
DE2616857A1 (de) Verfahren zur herstellung von halbleiterbauelementen
DE10327618A1 (de) Verfahren zur Ausbildung von Aluminiummetallverdrahtungen
DE2252832A1 (de) Halbleiterelement mit elektroden sowie verfahren zu seiner herstellung
DE2134291A1 (de) Halbleitervorrichtung
DE4329260B9 (de) Verfahren zur Herstellung einer Verdrahtung in einem Halbleiterbauelement
DE1764937C3 (de) Verfahren zur Herstellung von Isolationsschichten zwischen mehrschichtig übereinander angeordneten metallischen Leitungsverbindungen für eine Halbleiteranordnung
DE19620677B4 (de) Verfahren zur Bildung eines SOG-Films bei einem Halbleiterbauelement und Halbleiterbauelement mit einem SOG-Film

Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
8128 New person/name/address of the agent

Representative=s name: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZ

8127 New person/name/address of the applicant

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee