DE3002492C2 - - Google Patents
Info
- Publication number
- DE3002492C2 DE3002492C2 DE3002492A DE3002492A DE3002492C2 DE 3002492 C2 DE3002492 C2 DE 3002492C2 DE 3002492 A DE3002492 A DE 3002492A DE 3002492 A DE3002492 A DE 3002492A DE 3002492 C2 DE3002492 C2 DE 3002492C2
- Authority
- DE
- Germany
- Prior art keywords
- memory cell
- cell
- floating gate
- volatile memory
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015654 memory Effects 0.000 claims description 147
- 238000007667 floating Methods 0.000 claims description 100
- 239000004020 conductor Substances 0.000 claims description 70
- 230000003068 static effect Effects 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 32
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
- 229920005591 polysilicon Polymers 0.000 claims description 27
- 230000008878 coupling Effects 0.000 claims description 23
- 238000010168 coupling process Methods 0.000 claims description 23
- 238000005859 coupling reaction Methods 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000013461 design Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 2
- 230000003746 surface roughness Effects 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 47
- 238000003860 storage Methods 0.000 description 24
- 230000005641 tunneling Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 235000019592 roughness Nutrition 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000000295 complement effect Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 208000000044 Amnesia Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 231100000863 loss of memory Toxicity 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/006,029 US4300212A (en) | 1979-01-24 | 1979-01-24 | Nonvolatile static random access memory devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3002492A1 DE3002492A1 (de) | 1980-07-31 |
| DE3002492C2 true DE3002492C2 (ko) | 1990-12-20 |
Family
ID=21718940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803002492 Granted DE3002492A1 (de) | 1979-01-24 | 1980-01-24 | Nicht selbstloeschende speichereinrichtung und verfahren zum betrieb dieser einrichtung |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS55101192A (ko) |
| KR (1) | KR830001767B1 (ko) |
| BE (1) | BE881329A (ko) |
| DE (1) | DE3002492A1 (ko) |
| FR (1) | FR2447587B1 (ko) |
| GB (1) | GB2042296B (ko) |
| NL (1) | NL192015C (ko) |
| SE (1) | SE8000392L (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10211337A1 (de) * | 2002-03-14 | 2003-10-09 | Infineon Technologies Ag | Schaltkreis-Anordnung und Verfahren zum Betreiben einer Schaltkreis-Anordnung |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4486769A (en) * | 1979-01-24 | 1984-12-04 | Xicor, Inc. | Dense nonvolatile electrically-alterable memory device with substrate coupling electrode |
| JPS56500109A (ko) * | 1979-03-13 | 1981-02-05 | ||
| JPS57199264A (en) * | 1981-06-03 | 1982-12-07 | Toshiba Corp | Semiconductor memory |
| JPS57199265A (en) * | 1981-06-03 | 1982-12-07 | Toshiba Corp | Semiconductor memory |
| US4388704A (en) * | 1980-09-30 | 1983-06-14 | International Business Machines Corporation | Non-volatile RAM cell with enhanced conduction insulators |
| JPS5792865A (en) * | 1980-11-29 | 1982-06-09 | Toshiba Corp | Manufacture of semiconductor memory device |
| JPS5792490A (en) * | 1980-11-29 | 1982-06-09 | Toshiba Corp | Semiconductor storage device |
| GB2094086B (en) * | 1981-03-03 | 1985-08-14 | Tokyo Shibaura Electric Co | Non-volatile semiconductor memory system |
| US4630238A (en) * | 1983-10-14 | 1986-12-16 | Fujitsu Limited | Semiconductor memory device |
| JPS60185297A (ja) * | 1984-03-02 | 1985-09-20 | Fujitsu Ltd | 不揮発性ランダムアクセスメモリ装置 |
| JPH0638502B2 (ja) * | 1984-06-13 | 1994-05-18 | セイコー電子工業株式会社 | 不揮発性ｒａｍ |
| US4616245A (en) * | 1984-10-29 | 1986-10-07 | Ncr Corporation | Direct-write silicon nitride EEPROM cell |
| JPH07120716B2 (ja) * | 1985-03-30 | 1995-12-20 | 株式会社東芝 | 半導体記憶装置 |
| JPS61225860A (ja) * | 1985-03-30 | 1986-10-07 | Toshiba Corp | 半導体記憶装置 |
| JPH01214993A (ja) * | 1988-02-23 | 1989-08-29 | Nissan Motor Co Ltd | データ記憶装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4070655A (en) * | 1976-11-05 | 1978-01-24 | The United States Of America As Represented By The Secretary Of The Air Force | Virtually nonvolatile static random access memory device |
| US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
| US4128773A (en) * | 1977-11-07 | 1978-12-05 | Hughes Aircraft Company | Volatile/non-volatile logic latch circuit |
-
1980
- 1980-01-16 GB GB8001429A patent/GB2042296B/en not_active Expired
- 1980-01-17 SE SE8000392A patent/SE8000392L/ not_active Application Discontinuation
- 1980-01-23 FR FR8001399A patent/FR2447587B1/fr not_active Expired
- 1980-01-23 NL NL8000435A patent/NL192015C/xx not_active IP Right Cessation
- 1980-01-24 JP JP738980A patent/JPS55101192A/ja active Granted
- 1980-01-24 DE DE19803002492 patent/DE3002492A1/de active Granted
- 1980-01-24 KR KR1019800000256A patent/KR830001767B1/ko active
- 1980-01-24 BE BE0/199093A patent/BE881329A/fr not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10211337A1 (de) * | 2002-03-14 | 2003-10-09 | Infineon Technologies Ag | Schaltkreis-Anordnung und Verfahren zum Betreiben einer Schaltkreis-Anordnung |
| DE10211337B4 (de) * | 2002-03-14 | 2009-12-31 | Infineon Technologies Ag | Schaltkreis-Anordnung und Verfahren zum Betreiben einer Schaltkreis-Anordnung |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3002492A1 (de) | 1980-07-31 |
| GB2042296B (en) | 1983-05-11 |
| NL192015C (nl) | 1996-12-03 |
| KR830001767B1 (ko) | 1983-09-03 |
| NL192015B (nl) | 1996-08-01 |
| GB2042296A (en) | 1980-09-17 |
| BE881329A (fr) | 1980-05-16 |
| JPS55101192A (en) | 1980-08-01 |
| FR2447587B1 (fr) | 1986-02-28 |
| FR2447587A1 (fr) | 1980-08-22 |
| NL8000435A (nl) | 1980-07-28 |
| JPH0115959B2 (ko) | 1989-03-22 |
| SE8000392L (sv) | 1980-07-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69029132T2 (de) | Novramzell unter verwendung von zwei differentialen entkopplungsbaren nichtflüchtigen speicherelementen | |
| DE3203516C2 (ko) | ||
| DE3032657C2 (ko) | ||
| DE3851479T2 (de) | Speicherzelle einer nichtflüchtigen Halbleiter-Speicheranordnung. | |
| DE3117719C2 (ko) | ||
| DE69217249T2 (de) | Nichtflüchtige direktzugriff- speicheranordnung. | |
| DE68926811T2 (de) | Halbleiterspeicheranordnung | |
| DE3876865T2 (de) | Elektrisch loeschbarer und programmierbarer nur-lese-speicher. | |
| DE3103160C2 (de) | Wiederprogrammierbare, nichtflüchtige EPROM-Speicherzelle und mit solchen Speicherzellen aufgebauter Speicher | |
| DE3929816C2 (de) | Elektrisch löschbare und programmierbare Halbleiterspeichereinrichtung und Verfahren zum Löschen und Programmieren dieser Halbleiterspeichereinrichtung | |
| DE3002492C2 (ko) | ||
| DE3121753C2 (ko) | ||
| DE69017953T2 (de) | Mehrstufen-Boosterschaltkreis mit wirksamem Ladungstransfer zwischen aufeinanderfolgenden Stufen. | |
| DE68911044T2 (de) | Halbleiterspeicher. | |
| DE3009719C2 (ko) | ||
| DE3002493A1 (de) | Substratgekoppelte speicherzelle mit einem floating-gate und verfahren zum betrieb dieser zelle | |
| DE3839114A1 (de) | Nichtfluechtige dynamische halbleiterspeicheranordnung mit nand-zellenstruktur | |
| DE2916884A1 (de) | Programmierbare halbleiterspeicherzelle | |
| DE3486418T2 (de) | Halbleiterspeicheranordnung | |
| DE69929409T2 (de) | Speicherzelle mit kapazitiver Last | |
| CH641587A5 (de) | Bistabile kippstufe mit fixierbarem schaltzustand. | |
| DE68915196T2 (de) | Nichtflüchtige RAM-Zelle. | |
| DE3312263C2 (de) | Integrierte Hochspannungs-Verteiler-und Steuerschaltungsanordnung und Verfahren zur selektiven Einspeisung einer Hochspannung in Schaltungsknoten | |
| DE2818783C3 (de) | Datenspeicherzelle | |
| DE2309616C2 (de) | Halbleiterspeicherschaltung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: G11C 17/06 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |