DE2930290A1 - Verfahren zum herstellen eines gegenstandes - Google Patents

Verfahren zum herstellen eines gegenstandes

Info

Publication number
DE2930290A1
DE2930290A1 DE19792930290 DE2930290A DE2930290A1 DE 2930290 A1 DE2930290 A1 DE 2930290A1 DE 19792930290 DE19792930290 DE 19792930290 DE 2930290 A DE2930290 A DE 2930290A DE 2930290 A1 DE2930290 A1 DE 2930290A1
Authority
DE
Germany
Prior art keywords
species
etching
gas mixture
etched
etchant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19792930290
Other languages
German (de)
English (en)
Other versions
DE2930290C2 (enExample
Inventor
William Reid Harshbarger
Hyman Joseph Levinstein
Cyril Joseph Mogab
Roy Arlie Porter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE2930290A1 publication Critical patent/DE2930290A1/de
Application granted granted Critical
Publication of DE2930290C2 publication Critical patent/DE2930290C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
DE19792930290 1978-07-31 1979-07-26 Verfahren zum herstellen eines gegenstandes Granted DE2930290A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/929,549 US4208241A (en) 1978-07-31 1978-07-31 Device fabrication by plasma etching
KR1019790002599A KR830000595B1 (ko) 1978-07-31 1979-07-31 반도체 장치의 제조법

Publications (2)

Publication Number Publication Date
DE2930290A1 true DE2930290A1 (de) 1980-02-28
DE2930290C2 DE2930290C2 (enExample) 1987-07-09

Family

ID=26626587

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19792930290 Granted DE2930290A1 (de) 1978-07-31 1979-07-26 Verfahren zum herstellen eines gegenstandes

Country Status (15)

Country Link
US (1) US4208241A (enExample)
JP (1) JPS5922374B2 (enExample)
KR (1) KR830000595B1 (enExample)
AU (1) AU526064B2 (enExample)
BE (1) BE877892A (enExample)
CA (1) CA1121305A (enExample)
CH (1) CH644405A5 (enExample)
DE (1) DE2930290A1 (enExample)
ES (1) ES482958A1 (enExample)
FR (1) FR2466857B1 (enExample)
GB (1) GB2026394B (enExample)
IE (1) IE48674B1 (enExample)
IT (1) IT1205225B (enExample)
NL (1) NL189325C (enExample)
SE (1) SE441878B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3132555A1 (de) * 1980-08-22 1982-06-16 Western Electric Co., Inc., 10038 New York, N.Y. Iii-v-halbleiterbauelement und verfahren zu seiner herstellung
EP0061350A1 (en) * 1981-03-25 1982-09-29 Hitachi, Ltd. Method of forming pattern

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4253907A (en) * 1979-03-28 1981-03-03 Western Electric Company, Inc. Anisotropic plasma etching
DE2923710A1 (de) * 1979-06-12 1980-12-18 Licentia Gmbh Verfahren zur metallisierung von kunststoffoberflaechen
EP0023429B1 (en) * 1979-07-31 1985-12-18 Fujitsu Limited Dry etching of metal film
US4255230A (en) * 1980-02-22 1981-03-10 Eaton Corporation Plasma etching process
US4334951A (en) * 1980-03-12 1982-06-15 Bell Telephone Laboratories, Incorporated Fabrication technique for the production of devices which depend on magnetic bubbles
US4310380A (en) * 1980-04-07 1982-01-12 Bell Telephone Laboratories, Incorporated Plasma etching of silicon
US4324611A (en) * 1980-06-26 1982-04-13 Branson International Plasma Corporation Process and gas mixture for etching silicon dioxide and silicon nitride
DE3140675A1 (de) * 1980-10-14 1982-06-16 Branson International Plasma Corp., 94544 Hayward, Calif. Verfahren und gasgemisch zum aetzen von aluminium
DE3103177A1 (de) * 1981-01-30 1982-08-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von polysiliziumstrukturen bis in den 1 (my)m-bereich auf integrierte halbleiterschaltungen enthaltenden substraten durch plasmaaetzen
US4551417A (en) * 1982-06-08 1985-11-05 Nec Corporation Method of forming patterns in manufacturing microelectronic devices
DE3275447D1 (en) * 1982-07-03 1987-03-19 Ibm Deutschland Process for the formation of grooves having essentially vertical lateral silicium walls by reactive ion etching
US4450042A (en) * 1982-07-06 1984-05-22 Texas Instruments Incorporated Plasma etch chemistry for anisotropic etching of silicon
US4426246A (en) * 1982-07-26 1984-01-17 Bell Telephone Laboratories, Incorporated Plasma pretreatment with BCl3 to remove passivation formed by fluorine-etch
NL8204437A (nl) * 1982-11-16 1984-06-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met behulp van plasma-etsen.
US4414057A (en) * 1982-12-03 1983-11-08 Inmos Corporation Anisotropic silicide etching process
US4444617A (en) * 1983-01-06 1984-04-24 Rockwell International Corporation Reactive ion etching of molybdenum silicide and N+ polysilicon
EP0117258B1 (de) * 1983-02-23 1987-05-20 Ibm Deutschland Gmbh Verfahren zur Herstellung von haftfesten Metallschichten auf Kunststoffsubstraten
US4496419A (en) * 1983-02-28 1985-01-29 Cornell Research Foundation, Inc. Fine line patterning method for submicron devices
JPH0622212B2 (ja) * 1983-05-31 1994-03-23 株式会社東芝 ドライエッチング方法
US4472238A (en) * 1983-12-05 1984-09-18 E. I. Du Pont De Nemours And Company Process using plasma for forming conductive through-holes through a dielectric layer
US4561907A (en) * 1984-07-12 1985-12-31 Bruha Raicu Process for forming low sheet resistance polysilicon having anisotropic etch characteristics
US4778562A (en) * 1984-08-13 1988-10-18 General Motors Corporation Reactive ion etching of tin oxide films using neutral reactant gas containing hydrogen
US4544444A (en) * 1984-08-15 1985-10-01 General Motors Corporation Reactive ion etching of tin oxide films using silicon tetrachloride reactant gas
US4784719A (en) * 1985-06-28 1988-11-15 American Telephone And Telegraph Company, At&T Bell Laboratories Dry etching procedure
WO1987000345A1 (en) * 1985-06-28 1987-01-15 American Telephone & Telegraph Company Procedure for fabricating devices involving dry etching
US4734157A (en) * 1985-08-27 1988-03-29 International Business Machines Corporation Selective and anisotropic dry etching
US5171525A (en) * 1987-02-25 1992-12-15 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4801427A (en) * 1987-02-25 1989-01-31 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4943417A (en) * 1987-02-25 1990-07-24 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US4917586A (en) * 1987-02-25 1990-04-17 Adir Jacob Process for dry sterilization of medical devices and materials
US4931261A (en) * 1987-02-25 1990-06-05 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US5087418A (en) * 1987-02-25 1992-02-11 Adir Jacob Process for dry sterilization of medical devices and materials
US5200158A (en) * 1987-02-25 1993-04-06 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4976920A (en) * 1987-07-14 1990-12-11 Adir Jacob Process for dry sterilization of medical devices and materials
US4818488A (en) * 1987-02-25 1989-04-04 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5217570A (en) * 1991-01-31 1993-06-08 Sony Corporation Dry etching method
JP3191407B2 (ja) * 1991-08-29 2001-07-23 ソニー株式会社 配線形成方法
JP2884970B2 (ja) * 1992-11-18 1999-04-19 株式会社デンソー 半導体のドライエッチング方法
JP2734915B2 (ja) * 1992-11-18 1998-04-02 株式会社デンソー 半導体のドライエッチング方法
US5662768A (en) * 1995-09-21 1997-09-02 Lsi Logic Corporation High surface area trenches for an integrated ciruit device
US6046116A (en) 1997-11-19 2000-04-04 Tegal Corporation Method for minimizing the critical dimension growth of a feature on a semiconductor wafer
US6051346A (en) * 1998-04-29 2000-04-18 Lucent Technologies Inc. Process for fabricating a lithographic mask
US6232219B1 (en) 1998-05-20 2001-05-15 Micron Technology, Inc. Self-limiting method of reducing contamination in a contact opening, method of making contacts and semiconductor devices therewith, and resulting structures
US6197388B1 (en) 1999-03-31 2001-03-06 Lam Research Corporation Methods of preventing post-etch corrosion of an aluminum neodymium-containing layer
US6399507B1 (en) * 1999-09-22 2002-06-04 Applied Materials, Inc. Stable plasma process for etching of films
US6656847B1 (en) * 1999-11-01 2003-12-02 Taiwan Semiconductor Manufacturing Company Method for etching silicon nitride selective to titanium silicide
JP5054874B2 (ja) * 1999-12-02 2012-10-24 ティーガル コーポレイション リアクタ内でプラチナエッチングを行う方法
JP2002123907A (ja) * 2000-10-13 2002-04-26 Tdk Corp 薄膜磁気ヘッドの製造方法
KR100379976B1 (ko) * 2000-11-27 2003-04-16 삼성전자주식회사 실리콘 산화물 식각용 가스 조성물 및 이를 사용한 실리콘산화물의 식각 방법
US6989108B2 (en) * 2001-08-30 2006-01-24 Micron Technology, Inc. Etchant gas composition
US20040013386A1 (en) * 2002-07-19 2004-01-22 Agere Systems, Inc. Optical device and method of manufacture thereof
AU2003297861A1 (en) * 2002-12-23 2004-07-29 Tokyo Electron Limited Method and apparatus for bilayer photoresist dry development
US20050236366A1 (en) * 2004-04-27 2005-10-27 Taiwan Semiconductor Manufacturing Co. Use of C2F6 gas to gain vertical profile in high dosage implanted poly film
US7645707B2 (en) * 2005-03-30 2010-01-12 Lam Research Corporation Etch profile control
CN101809723B (zh) * 2007-09-27 2012-04-04 朗姆研究公司 蚀刻蚀刻层的方法和装置
KR101528947B1 (ko) * 2007-09-27 2015-06-15 램 리써치 코포레이션 유전체 에칭에서의 프로파일 제어

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4069096A (en) * 1975-11-03 1978-01-17 Texas Instruments Incorporated Silicon etching process
DE2730156A1 (de) * 1976-08-16 1978-02-23 Northern Telecom Ltd Gas-plasma-aetzung von aluminium und aluminiumoxid

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1417085A (en) * 1973-05-17 1975-12-10 Standard Telephones Cables Ltd Plasma etching
GB1523267A (en) * 1976-04-15 1978-08-31 Hitachi Ltd Plasma etching apparatus
US4030967A (en) * 1976-08-16 1977-06-21 Northern Telecom Limited Gaseous plasma etching of aluminum and aluminum oxide

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4069096A (en) * 1975-11-03 1978-01-17 Texas Instruments Incorporated Silicon etching process
DE2730156A1 (de) * 1976-08-16 1978-02-23 Northern Telecom Ltd Gas-plasma-aetzung von aluminium und aluminiumoxid

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
H.G. Hughes und M.J. Rand "Etching for Pattern Definition", Princeton, N.J., 1976, S. 91-110 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3132555A1 (de) * 1980-08-22 1982-06-16 Western Electric Co., Inc., 10038 New York, N.Y. Iii-v-halbleiterbauelement und verfahren zu seiner herstellung
EP0061350A1 (en) * 1981-03-25 1982-09-29 Hitachi, Ltd. Method of forming pattern

Also Published As

Publication number Publication date
GB2026394B (en) 1982-07-21
US4208241A (en) 1980-06-17
AU526064B2 (en) 1982-12-16
IT1205225B (it) 1989-03-15
CA1121305A (en) 1982-04-06
FR2466857A1 (fr) 1981-04-10
FR2466857B1 (fr) 1985-08-23
NL7905866A (nl) 1980-02-04
CH644405A5 (de) 1984-07-31
GB2026394A (en) 1980-02-06
IT7924773A0 (it) 1979-07-30
IE791450L (en) 1980-01-31
BE877892A (fr) 1979-11-16
SE7906297L (sv) 1980-02-01
AU4923479A (en) 1980-02-07
JPS5922374B2 (ja) 1984-05-26
IE48674B1 (en) 1985-04-17
NL189325C (nl) 1993-03-01
DE2930290C2 (enExample) 1987-07-09
SE441878B (sv) 1985-11-11
JPS5521198A (en) 1980-02-15
KR830000595B1 (ko) 1983-03-15
NL189325B (nl) 1992-10-01
ES482958A1 (es) 1980-03-01

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Legal Events

Date Code Title Description
OD Request for examination
8127 New person/name/address of the applicant

Owner name: AT & T TECHNOLOGIES, INC., NEW YORK, N.Y., US

8128 New person/name/address of the agent

Representative=s name: BLUMBACH, P., DIPL.-ING., 6200 WIESBADEN WESER, W.

8128 New person/name/address of the agent

Representative=s name: BLUMBACH, P., DIPL.-ING., 6200 WIESBADEN WESER, W.

D2 Grant after examination
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8327 Change in the person/name/address of the patent owner

Owner name: LUCENT TECHNOLOGIES INC., MURRAY HILL, N.J., US