BE877892A - Procede de fabrication d'un dispositif par attaque par plasma - Google Patents
Procede de fabrication d'un dispositif par attaque par plasmaInfo
- Publication number
- BE877892A BE877892A BE0/196452A BE196452A BE877892A BE 877892 A BE877892 A BE 877892A BE 0/196452 A BE0/196452 A BE 0/196452A BE 196452 A BE196452 A BE 196452A BE 877892 A BE877892 A BE 877892A
- Authority
- BE
- Belgium
- Prior art keywords
- manufacturing
- plasma attack
- attack
- plasma
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/929,549 US4208241A (en) | 1978-07-31 | 1978-07-31 | Device fabrication by plasma etching |
KR1019790002599A KR830000595B1 (ko) | 1978-07-31 | 1979-07-31 | 반도체 장치의 제조법 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE877892A true BE877892A (fr) | 1979-11-16 |
Family
ID=26626587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE0/196452A BE877892A (fr) | 1978-07-31 | 1979-07-25 | Procede de fabrication d'un dispositif par attaque par plasma |
Country Status (15)
Country | Link |
---|---|
US (1) | US4208241A (fr) |
JP (1) | JPS5922374B2 (fr) |
KR (1) | KR830000595B1 (fr) |
AU (1) | AU526064B2 (fr) |
BE (1) | BE877892A (fr) |
CA (1) | CA1121305A (fr) |
CH (1) | CH644405A5 (fr) |
DE (1) | DE2930290A1 (fr) |
ES (1) | ES482958A1 (fr) |
FR (1) | FR2466857B1 (fr) |
GB (1) | GB2026394B (fr) |
IE (1) | IE48674B1 (fr) |
IT (1) | IT1205225B (fr) |
NL (1) | NL189325C (fr) |
SE (1) | SE441878B (fr) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4253907A (en) * | 1979-03-28 | 1981-03-03 | Western Electric Company, Inc. | Anisotropic plasma etching |
DE2923710A1 (de) * | 1979-06-12 | 1980-12-18 | Licentia Gmbh | Verfahren zur metallisierung von kunststoffoberflaechen |
DE3071299D1 (en) * | 1979-07-31 | 1986-01-30 | Fujitsu Ltd | Dry etching of metal film |
US4255230A (en) * | 1980-02-22 | 1981-03-10 | Eaton Corporation | Plasma etching process |
US4334951A (en) * | 1980-03-12 | 1982-06-15 | Bell Telephone Laboratories, Incorporated | Fabrication technique for the production of devices which depend on magnetic bubbles |
US4310380A (en) * | 1980-04-07 | 1982-01-12 | Bell Telephone Laboratories, Incorporated | Plasma etching of silicon |
US4324611A (en) * | 1980-06-26 | 1982-04-13 | Branson International Plasma Corporation | Process and gas mixture for etching silicon dioxide and silicon nitride |
US4403241A (en) * | 1980-08-22 | 1983-09-06 | Bell Telephone Laboratories, Incorporated | Method for etching III-V semiconductors and devices made by this method |
DE3140675A1 (de) * | 1980-10-14 | 1982-06-16 | Branson International Plasma Corp., 94544 Hayward, Calif. | Verfahren und gasgemisch zum aetzen von aluminium |
DE3103177A1 (de) * | 1981-01-30 | 1982-08-26 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von polysiliziumstrukturen bis in den 1 (my)m-bereich auf integrierte halbleiterschaltungen enthaltenden substraten durch plasmaaetzen |
JPS57157523A (en) * | 1981-03-25 | 1982-09-29 | Hitachi Ltd | Forming method for pattern |
US4551417A (en) * | 1982-06-08 | 1985-11-05 | Nec Corporation | Method of forming patterns in manufacturing microelectronic devices |
DE3275447D1 (en) * | 1982-07-03 | 1987-03-19 | Ibm Deutschland | Process for the formation of grooves having essentially vertical lateral silicium walls by reactive ion etching |
US4450042A (en) * | 1982-07-06 | 1984-05-22 | Texas Instruments Incorporated | Plasma etch chemistry for anisotropic etching of silicon |
US4426246A (en) * | 1982-07-26 | 1984-01-17 | Bell Telephone Laboratories, Incorporated | Plasma pretreatment with BCl3 to remove passivation formed by fluorine-etch |
NL8204437A (nl) * | 1982-11-16 | 1984-06-18 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met behulp van plasma-etsen. |
US4414057A (en) * | 1982-12-03 | 1983-11-08 | Inmos Corporation | Anisotropic silicide etching process |
US4444617A (en) * | 1983-01-06 | 1984-04-24 | Rockwell International Corporation | Reactive ion etching of molybdenum silicide and N+ polysilicon |
EP0117258B1 (fr) * | 1983-02-23 | 1987-05-20 | Ibm Deutschland Gmbh | Procédés pour réaliser des couches métalliques adhérentes à des supports en matière synthétique |
US4496419A (en) * | 1983-02-28 | 1985-01-29 | Cornell Research Foundation, Inc. | Fine line patterning method for submicron devices |
JPH0622212B2 (ja) * | 1983-05-31 | 1994-03-23 | 株式会社東芝 | ドライエッチング方法 |
US4472238A (en) * | 1983-12-05 | 1984-09-18 | E. I. Du Pont De Nemours And Company | Process using plasma for forming conductive through-holes through a dielectric layer |
US4561907A (en) * | 1984-07-12 | 1985-12-31 | Bruha Raicu | Process for forming low sheet resistance polysilicon having anisotropic etch characteristics |
US4778562A (en) * | 1984-08-13 | 1988-10-18 | General Motors Corporation | Reactive ion etching of tin oxide films using neutral reactant gas containing hydrogen |
US4544444A (en) * | 1984-08-15 | 1985-10-01 | General Motors Corporation | Reactive ion etching of tin oxide films using silicon tetrachloride reactant gas |
EP0229104A1 (fr) * | 1985-06-28 | 1987-07-22 | AT&T Corp. | Procede de fabrication de dispositifs comportant une gravure par la voie seche |
US4784719A (en) * | 1985-06-28 | 1988-11-15 | American Telephone And Telegraph Company, At&T Bell Laboratories | Dry etching procedure |
US4734157A (en) * | 1985-08-27 | 1988-03-29 | International Business Machines Corporation | Selective and anisotropic dry etching |
US4976920A (en) * | 1987-07-14 | 1990-12-11 | Adir Jacob | Process for dry sterilization of medical devices and materials |
US5200158A (en) * | 1987-02-25 | 1993-04-06 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US5171525A (en) * | 1987-02-25 | 1992-12-15 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US4943417A (en) * | 1987-02-25 | 1990-07-24 | Adir Jacob | Apparatus for dry sterilization of medical devices and materials |
US4801427A (en) * | 1987-02-25 | 1989-01-31 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US4917586A (en) * | 1987-02-25 | 1990-04-17 | Adir Jacob | Process for dry sterilization of medical devices and materials |
US4931261A (en) * | 1987-02-25 | 1990-06-05 | Adir Jacob | Apparatus for dry sterilization of medical devices and materials |
US5087418A (en) * | 1987-02-25 | 1992-02-11 | Adir Jacob | Process for dry sterilization of medical devices and materials |
US4818488A (en) * | 1987-02-25 | 1989-04-04 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US5217570A (en) * | 1991-01-31 | 1993-06-08 | Sony Corporation | Dry etching method |
JP3191407B2 (ja) * | 1991-08-29 | 2001-07-23 | ソニー株式会社 | 配線形成方法 |
JP2734915B2 (ja) * | 1992-11-18 | 1998-04-02 | 株式会社デンソー | 半導体のドライエッチング方法 |
JP2884970B2 (ja) * | 1992-11-18 | 1999-04-19 | 株式会社デンソー | 半導体のドライエッチング方法 |
US5662768A (en) * | 1995-09-21 | 1997-09-02 | Lsi Logic Corporation | High surface area trenches for an integrated ciruit device |
US6046116A (en) | 1997-11-19 | 2000-04-04 | Tegal Corporation | Method for minimizing the critical dimension growth of a feature on a semiconductor wafer |
US6051346A (en) * | 1998-04-29 | 2000-04-18 | Lucent Technologies Inc. | Process for fabricating a lithographic mask |
US6232219B1 (en) | 1998-05-20 | 2001-05-15 | Micron Technology, Inc. | Self-limiting method of reducing contamination in a contact opening, method of making contacts and semiconductor devices therewith, and resulting structures |
US6197388B1 (en) | 1999-03-31 | 2001-03-06 | Lam Research Corporation | Methods of preventing post-etch corrosion of an aluminum neodymium-containing layer |
US6399507B1 (en) * | 1999-09-22 | 2002-06-04 | Applied Materials, Inc. | Stable plasma process for etching of films |
US6656847B1 (en) * | 1999-11-01 | 2003-12-02 | Taiwan Semiconductor Manufacturing Company | Method for etching silicon nitride selective to titanium silicide |
WO2001040540A1 (fr) * | 1999-12-02 | 2001-06-07 | Tegal Corporation | Reacteur ameliore comportant des electrodes et des surfaces chauffees et structurees |
JP2002123907A (ja) * | 2000-10-13 | 2002-04-26 | Tdk Corp | 薄膜磁気ヘッドの製造方法 |
KR100379976B1 (ko) * | 2000-11-27 | 2003-04-16 | 삼성전자주식회사 | 실리콘 산화물 식각용 가스 조성물 및 이를 사용한 실리콘산화물의 식각 방법 |
US6989108B2 (en) * | 2001-08-30 | 2006-01-24 | Micron Technology, Inc. | Etchant gas composition |
US20040013386A1 (en) * | 2002-07-19 | 2004-01-22 | Agere Systems, Inc. | Optical device and method of manufacture thereof |
JP4594235B2 (ja) * | 2002-12-23 | 2010-12-08 | 東京エレクトロン株式会社 | Arc層をエッチングする方法 |
US20050236366A1 (en) * | 2004-04-27 | 2005-10-27 | Taiwan Semiconductor Manufacturing Co. | Use of C2F6 gas to gain vertical profile in high dosage implanted poly film |
US7645707B2 (en) * | 2005-03-30 | 2010-01-12 | Lam Research Corporation | Etch profile control |
CN101809723B (zh) * | 2007-09-27 | 2012-04-04 | 朗姆研究公司 | 蚀刻蚀刻层的方法和装置 |
CN101809721B (zh) * | 2007-09-27 | 2013-03-06 | 朗姆研究公司 | 电介质蚀刻中的形貌控制 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1417085A (en) * | 1973-05-17 | 1975-12-10 | Standard Telephones Cables Ltd | Plasma etching |
US4069096A (en) * | 1975-11-03 | 1978-01-17 | Texas Instruments Incorporated | Silicon etching process |
GB1523267A (en) * | 1976-04-15 | 1978-08-31 | Hitachi Ltd | Plasma etching apparatus |
US4030967A (en) * | 1976-08-16 | 1977-06-21 | Northern Telecom Limited | Gaseous plasma etching of aluminum and aluminum oxide |
CA1059882A (fr) * | 1976-08-16 | 1979-08-07 | Northern Telecom Limited | Burinage de l'aluminium et de l'alumine au plasma gazeux |
-
1978
- 1978-07-31 US US05/929,549 patent/US4208241A/en not_active Expired - Lifetime
-
1979
- 1979-07-19 CA CA000332161A patent/CA1121305A/fr not_active Expired
- 1979-07-23 SE SE7906297A patent/SE441878B/sv unknown
- 1979-07-25 FR FR7919154A patent/FR2466857B1/fr not_active Expired
- 1979-07-25 BE BE0/196452A patent/BE877892A/fr not_active IP Right Cessation
- 1979-07-25 AU AU49234/79A patent/AU526064B2/en not_active Expired
- 1979-07-26 GB GB7926037A patent/GB2026394B/en not_active Expired
- 1979-07-26 DE DE19792930290 patent/DE2930290A1/de active Granted
- 1979-07-30 IT IT24773/79A patent/IT1205225B/it active
- 1979-07-30 ES ES482958A patent/ES482958A1/es not_active Expired
- 1979-07-30 NL NLAANVRAGE7905866,A patent/NL189325C/xx not_active IP Right Cessation
- 1979-07-31 JP JP54096877A patent/JPS5922374B2/ja not_active Expired
- 1979-07-31 CH CH706479A patent/CH644405A5/de not_active IP Right Cessation
- 1979-07-31 KR KR1019790002599A patent/KR830000595B1/ko active
- 1979-08-08 IE IE1450/79A patent/IE48674B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPS5521198A (en) | 1980-02-15 |
DE2930290C2 (fr) | 1987-07-09 |
JPS5922374B2 (ja) | 1984-05-26 |
GB2026394A (en) | 1980-02-06 |
US4208241A (en) | 1980-06-17 |
ES482958A1 (es) | 1980-03-01 |
CA1121305A (fr) | 1982-04-06 |
FR2466857A1 (fr) | 1981-04-10 |
DE2930290A1 (de) | 1980-02-28 |
IE48674B1 (en) | 1985-04-17 |
CH644405A5 (de) | 1984-07-31 |
NL189325C (nl) | 1993-03-01 |
IT1205225B (it) | 1989-03-15 |
NL7905866A (nl) | 1980-02-04 |
GB2026394B (en) | 1982-07-21 |
SE7906297L (sv) | 1980-02-01 |
AU526064B2 (en) | 1982-12-16 |
SE441878B (sv) | 1985-11-11 |
FR2466857B1 (fr) | 1985-08-23 |
IT7924773A0 (it) | 1979-07-30 |
AU4923479A (en) | 1980-02-07 |
KR830000595B1 (ko) | 1983-03-15 |
NL189325B (nl) | 1992-10-01 |
IE791450L (en) | 1980-01-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RE20 | Patent expired |
Owner name: WESTERN ELECTRIC CY INC. Effective date: 19990725 |