DE2822166A1 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE2822166A1
DE2822166A1 DE19782822166 DE2822166A DE2822166A1 DE 2822166 A1 DE2822166 A1 DE 2822166A1 DE 19782822166 DE19782822166 DE 19782822166 DE 2822166 A DE2822166 A DE 2822166A DE 2822166 A1 DE2822166 A1 DE 2822166A1
Authority
DE
Germany
Prior art keywords
emitter
base
fingers
contact
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19782822166
Other languages
German (de)
English (en)
Other versions
DE2822166C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Henricus Theodorus Jaco Tacken
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2822166A1 publication Critical patent/DE2822166A1/de
Application granted granted Critical
Publication of DE2822166C2 publication Critical patent/DE2822166C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures

Landscapes

  • Bipolar Transistors (AREA)
DE19782822166 1977-05-25 1978-05-20 Halbleiteranordnung Granted DE2822166A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7705729,A NL181612C (nl) 1977-05-25 1977-05-25 Halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
DE2822166A1 true DE2822166A1 (de) 1978-11-30
DE2822166C2 DE2822166C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-12-15

Family

ID=19828611

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782822166 Granted DE2822166A1 (de) 1977-05-25 1978-05-20 Halbleiteranordnung

Country Status (10)

Country Link
JP (1) JPS53145581A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU518290B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1097430A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2822166A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (1) ES470066A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2392500A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1600638A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1094695B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL181612C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE433547B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3343632A1 (de) * 1982-12-17 1984-06-20 N.V. Philips' Gloeilampenfabrieken, Eindhoven Halbleiteranordnung
US4689655A (en) * 1980-05-09 1987-08-25 U.S. Philips Corporation Semiconductor device having a bipolar transistor with emitter series resistances
DE3802821A1 (de) * 1988-01-30 1989-08-03 Bosch Gmbh Robert Leistungstransistor
DE3802767A1 (de) * 1988-01-30 1989-08-10 Bosch Gmbh Robert Elektronisches geraet

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
EP0309784A1 (de) * 1987-09-30 1989-04-05 Siemens Aktiengesellschaft Anschlussstreifenstruktur für Bipolar-Transistoren
FR2634948B1 (fr) * 1988-07-29 1990-10-05 Radiotechnique Compelec Transistor de puissance a emetteur multi-cellulaires
DE102004046630A1 (de) * 2004-09-25 2006-03-30 Robert Bosch Gmbh Integrierte Schaltung für gepulste Leistungsströme

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1081509A (en) * 1965-04-07 1967-08-31 Itt Transistor
DE1539871A1 (de) * 1966-09-26 1970-02-12 Itt Ind Gmbh Deutsche Silizium-Planartransistor
US3704398A (en) * 1970-02-14 1972-11-28 Nippon Electric Co Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures
JPH05261968A (ja) * 1992-01-09 1993-10-12 Nec Corp レーザプリンタ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
JPS5261968A (en) * 1975-11-18 1977-05-21 Matsushita Electronics Corp Transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1081509A (en) * 1965-04-07 1967-08-31 Itt Transistor
DE1539871A1 (de) * 1966-09-26 1970-02-12 Itt Ind Gmbh Deutsche Silizium-Planartransistor
US3704398A (en) * 1970-02-14 1972-11-28 Nippon Electric Co Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures
JPH05261968A (ja) * 1992-01-09 1993-10-12 Nec Corp レーザプリンタ

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689655A (en) * 1980-05-09 1987-08-25 U.S. Philips Corporation Semiconductor device having a bipolar transistor with emitter series resistances
DE3343632A1 (de) * 1982-12-17 1984-06-20 N.V. Philips' Gloeilampenfabrieken, Eindhoven Halbleiteranordnung
DE3802821A1 (de) * 1988-01-30 1989-08-03 Bosch Gmbh Robert Leistungstransistor
DE3802767A1 (de) * 1988-01-30 1989-08-10 Bosch Gmbh Robert Elektronisches geraet

Also Published As

Publication number Publication date
GB1600638A (en) 1981-10-21
FR2392500B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1984-11-16
AU518290B2 (en) 1981-09-24
IT7823662A0 (it) 1978-05-22
IT1094695B (it) 1985-08-02
ES470066A1 (es) 1979-02-01
AU3635178A (en) 1979-11-29
NL181612B (nl) 1987-04-16
SE433547B (sv) 1984-05-28
NL7705729A (nl) 1978-11-28
SE7805782L (sv) 1978-11-26
JPS53145581A (en) 1978-12-18
DE2822166C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-12-15
NL181612C (nl) 1988-03-16
CA1097430A (en) 1981-03-10
FR2392500A1 (fr) 1978-12-22

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Legal Events

Date Code Title Description
OD Request for examination
D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee