SE433547B - Halvledaranordning innefattande en transistor med en rad av fingerliknande emitterregioner med olika lengder - Google Patents

Halvledaranordning innefattande en transistor med en rad av fingerliknande emitterregioner med olika lengder

Info

Publication number
SE433547B
SE433547B SE7805782A SE7805782A SE433547B SE 433547 B SE433547 B SE 433547B SE 7805782 A SE7805782 A SE 7805782A SE 7805782 A SE7805782 A SE 7805782A SE 433547 B SE433547 B SE 433547B
Authority
SE
Sweden
Prior art keywords
base
emitter
fingers
contact
collector
Prior art date
Application number
SE7805782A
Other languages
English (en)
Swedish (sv)
Other versions
SE7805782L (sv
Inventor
H T J Tacken
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE7805782L publication Critical patent/SE7805782L/xx
Publication of SE433547B publication Critical patent/SE433547B/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures

Landscapes

  • Bipolar Transistors (AREA)
SE7805782A 1977-05-25 1978-05-22 Halvledaranordning innefattande en transistor med en rad av fingerliknande emitterregioner med olika lengder SE433547B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7705729,A NL181612C (nl) 1977-05-25 1977-05-25 Halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
SE7805782L SE7805782L (sv) 1978-11-26
SE433547B true SE433547B (sv) 1984-05-28

Family

ID=19828611

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7805782A SE433547B (sv) 1977-05-25 1978-05-22 Halvledaranordning innefattande en transistor med en rad av fingerliknande emitterregioner med olika lengder

Country Status (10)

Country Link
JP (1) JPS53145581A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU518290B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1097430A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2822166A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (1) ES470066A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2392500A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1600638A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1094695B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL181612C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE433547B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017750C2 (de) * 1980-05-09 1985-03-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor
NL8204878A (nl) * 1982-12-17 1984-07-16 Philips Nv Halfgeleiderinrichting.
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
EP0309784A1 (de) * 1987-09-30 1989-04-05 Siemens Aktiengesellschaft Anschlussstreifenstruktur für Bipolar-Transistoren
DE3802821A1 (de) * 1988-01-30 1989-08-03 Bosch Gmbh Robert Leistungstransistor
DE3802767A1 (de) * 1988-01-30 1989-08-10 Bosch Gmbh Robert Elektronisches geraet
FR2634948B1 (fr) * 1988-07-29 1990-10-05 Radiotechnique Compelec Transistor de puissance a emetteur multi-cellulaires
DE102004046630A1 (de) * 2004-09-25 2006-03-30 Robert Bosch Gmbh Integrierte Schaltung für gepulste Leistungsströme

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
GB1081509A (en) * 1965-04-07 1967-08-31 Itt Transistor
DE1539871A1 (de) * 1966-09-26 1970-02-12 Itt Ind Gmbh Deutsche Silizium-Planartransistor
US3704398A (en) * 1970-02-14 1972-11-28 Nippon Electric Co Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures
JPS5261968A (en) * 1975-11-18 1977-05-21 Matsushita Electronics Corp Transistor
JPH05261968A (ja) * 1992-01-09 1993-10-12 Nec Corp レーザプリンタ

Also Published As

Publication number Publication date
AU518290B2 (en) 1981-09-24
IT7823662A0 (it) 1978-05-22
DE2822166C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-12-15
FR2392500A1 (fr) 1978-12-22
NL181612C (nl) 1988-03-16
NL181612B (nl) 1987-04-16
FR2392500B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1984-11-16
ES470066A1 (es) 1979-02-01
IT1094695B (it) 1985-08-02
AU3635178A (en) 1979-11-29
GB1600638A (en) 1981-10-21
NL7705729A (nl) 1978-11-28
CA1097430A (en) 1981-03-10
DE2822166A1 (de) 1978-11-30
JPS53145581A (en) 1978-12-18
SE7805782L (sv) 1978-11-26

Similar Documents

Publication Publication Date Title
US5903424A (en) Method for protecting an integrated circuit against electro-static discharges
US5652689A (en) ESD protection circuit located under protected bonding pad
JP3288115B2 (ja) 半導体部品
US7183612B2 (en) Semiconductor device having an electrostatic discharge protecting element
US6888201B2 (en) Bipolar ESD protection structure
JP3041043B2 (ja) パワーｍｏｓｆｅｔトランジスタ回路
US3936863A (en) Integrated power transistor with ballasting resistance and breakdown protection
US9741839B1 (en) Gate structure of thyristor
JP2007235151A (ja) 集積回路用の保護構造
US4825280A (en) Electrostatic discharge protection for semiconductor devices
NL8100347A (nl) Halfgeleiderinrichting met een beveiligingsinrichting.
US4656496A (en) Power transistor emitter ballasting
US4656491A (en) Protection circuit utilizing distributed transistors and resistors
SE433547B (sv) Halvledaranordning innefattande en transistor med en rad av fingerliknande emitterregioner med olika lengder
US10163890B2 (en) Semiconductor device
EP0472654B1 (en) Low voltage triggered snap-back device
EP0091079A2 (en) Power MOSFET
US4642668A (en) Semiconductor device having improved thermal characteristics
US4063270A (en) Semiconductor controlled rectifier device having amplifying gate structure
EP0494184B1 (en) Mos device with integral esd protection
US7196377B2 (en) MOS type semiconductor device having electrostatic discharge protection arrangement
US3462656A (en) Semiconductor device with an emitter,base and collector region
US4646122A (en) Semiconductor device with floating remote gate turn-off means
US4009059A (en) Reverse conducting thyristor and process for producing the same
US4114178A (en) Semiconductor controlled rectifier having an auxiliary region with localized low resistance paths to the control gate

Legal Events

Date Code Title Description
NUG Patent has lapsed

Ref document number: 7805782-5

Effective date: 19911209

Format of ref document f/p: F