GB1600638A - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- GB1600638A GB1600638A GB21172/78A GB2117278A GB1600638A GB 1600638 A GB1600638 A GB 1600638A GB 21172/78 A GB21172/78 A GB 21172/78A GB 2117278 A GB2117278 A GB 2117278A GB 1600638 A GB1600638 A GB 1600638A
- Authority
- GB
- United Kingdom
- Prior art keywords
- emitter
- base
- fingers
- contact
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 43
- 239000004020 conductor Substances 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000010210 aluminium Nutrition 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
- H10D62/135—Non-interconnected multi-emitter structures
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE7705729,A NL181612C (nl) | 1977-05-25 | 1977-05-25 | Halfgeleiderinrichting. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1600638A true GB1600638A (en) | 1981-10-21 |
Family
ID=19828611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB21172/78A Expired GB1600638A (en) | 1977-05-25 | 1978-05-22 | Semiconductor device |
Country Status (10)
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0148620A1 (en) * | 1983-12-27 | 1985-07-17 | Kabushiki Kaisha Toshiba | Image sensing device |
| WO2006032578A1 (de) * | 2004-09-25 | 2006-03-30 | Robert Bosch Gmbh | Integrierte schaltung für gepulste leistungsströme |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3017750C2 (de) * | 1980-05-09 | 1985-03-07 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor |
| NL8204878A (nl) * | 1982-12-17 | 1984-07-16 | Philips Nv | Halfgeleiderinrichting. |
| EP0309784A1 (de) * | 1987-09-30 | 1989-04-05 | Siemens Aktiengesellschaft | Anschlussstreifenstruktur für Bipolar-Transistoren |
| DE3802821A1 (de) * | 1988-01-30 | 1989-08-03 | Bosch Gmbh Robert | Leistungstransistor |
| DE3802767A1 (de) * | 1988-01-30 | 1989-08-10 | Bosch Gmbh Robert | Elektronisches geraet |
| FR2634948B1 (fr) * | 1988-07-29 | 1990-10-05 | Radiotechnique Compelec | Transistor de puissance a emetteur multi-cellulaires |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3358197A (en) * | 1963-05-22 | 1967-12-12 | Itt | Semiconductor device |
| US3225261A (en) * | 1963-11-19 | 1965-12-21 | Fairchild Camera Instr Co | High frequency power transistor |
| GB1081509A (en) * | 1965-04-07 | 1967-08-31 | Itt | Transistor |
| DE1539871A1 (de) * | 1966-09-26 | 1970-02-12 | Itt Ind Gmbh Deutsche | Silizium-Planartransistor |
| US3704398A (en) * | 1970-02-14 | 1972-11-28 | Nippon Electric Co | Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures |
| JPS5261968A (en) * | 1975-11-18 | 1977-05-21 | Matsushita Electronics Corp | Transistor |
| JPH05261968A (ja) * | 1992-01-09 | 1993-10-12 | Nec Corp | レーザプリンタ |
-
1977
- 1977-05-25 NL NLAANVRAGE7705729,A patent/NL181612C/xx not_active IP Right Cessation
-
1978
- 1978-05-18 CA CA303,661A patent/CA1097430A/en not_active Expired
- 1978-05-20 DE DE19782822166 patent/DE2822166A1/de active Granted
- 1978-05-22 IT IT23662/78A patent/IT1094695B/it active
- 1978-05-22 ES ES470066A patent/ES470066A1/es not_active Expired
- 1978-05-22 JP JP6009778A patent/JPS53145581A/ja active Pending
- 1978-05-22 AU AU36351/78A patent/AU518290B2/en not_active Expired
- 1978-05-22 SE SE7805782A patent/SE433547B/sv not_active IP Right Cessation
- 1978-05-22 GB GB21172/78A patent/GB1600638A/en not_active Expired
- 1978-05-25 FR FR7815569A patent/FR2392500A1/fr active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0148620A1 (en) * | 1983-12-27 | 1985-07-17 | Kabushiki Kaisha Toshiba | Image sensing device |
| WO2006032578A1 (de) * | 2004-09-25 | 2006-03-30 | Robert Bosch Gmbh | Integrierte schaltung für gepulste leistungsströme |
Also Published As
| Publication number | Publication date |
|---|---|
| AU518290B2 (en) | 1981-09-24 |
| IT7823662A0 (it) | 1978-05-22 |
| DE2822166C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-12-15 |
| FR2392500A1 (fr) | 1978-12-22 |
| NL181612C (nl) | 1988-03-16 |
| NL181612B (nl) | 1987-04-16 |
| FR2392500B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1984-11-16 |
| ES470066A1 (es) | 1979-02-01 |
| IT1094695B (it) | 1985-08-02 |
| AU3635178A (en) | 1979-11-29 |
| NL7705729A (nl) | 1978-11-28 |
| SE433547B (sv) | 1984-05-28 |
| CA1097430A (en) | 1981-03-10 |
| DE2822166A1 (de) | 1978-11-30 |
| JPS53145581A (en) | 1978-12-18 |
| SE7805782L (sv) | 1978-11-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19970522 |