ES470066A1 - Un dispositivo semiconductor perfeccionado - Google Patents

Un dispositivo semiconductor perfeccionado

Info

Publication number
ES470066A1
ES470066A1 ES470066A ES470066A ES470066A1 ES 470066 A1 ES470066 A1 ES 470066A1 ES 470066 A ES470066 A ES 470066A ES 470066 A ES470066 A ES 470066A ES 470066 A1 ES470066 A1 ES 470066A1
Authority
ES
Spain
Prior art keywords
conductivity
type
row
emitter
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES470066A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES470066A1 publication Critical patent/ES470066A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures

Landscapes

  • Bipolar Transistors (AREA)
ES470066A 1977-05-25 1978-05-22 Un dispositivo semiconductor perfeccionado Expired ES470066A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7705729,A NL181612C (nl) 1977-05-25 1977-05-25 Halfgeleiderinrichting.

Publications (1)

Publication Number Publication Date
ES470066A1 true ES470066A1 (es) 1979-02-01

Family

ID=19828611

Family Applications (1)

Application Number Title Priority Date Filing Date
ES470066A Expired ES470066A1 (es) 1977-05-25 1978-05-22 Un dispositivo semiconductor perfeccionado

Country Status (10)

Country Link
JP (1) JPS53145581A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU518290B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1097430A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2822166A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (1) ES470066A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2392500A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1600638A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1094695B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL181612C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE433547B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017750C2 (de) * 1980-05-09 1985-03-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor
NL8204878A (nl) * 1982-12-17 1984-07-16 Philips Nv Halfgeleiderinrichting.
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
EP0309784A1 (de) * 1987-09-30 1989-04-05 Siemens Aktiengesellschaft Anschlussstreifenstruktur für Bipolar-Transistoren
DE3802767A1 (de) * 1988-01-30 1989-08-10 Bosch Gmbh Robert Elektronisches geraet
DE3802821A1 (de) * 1988-01-30 1989-08-03 Bosch Gmbh Robert Leistungstransistor
FR2634948B1 (fr) * 1988-07-29 1990-10-05 Radiotechnique Compelec Transistor de puissance a emetteur multi-cellulaires
DE102004046630A1 (de) * 2004-09-25 2006-03-30 Robert Bosch Gmbh Integrierte Schaltung für gepulste Leistungsströme

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
GB1081509A (en) * 1965-04-07 1967-08-31 Itt Transistor
DE1539871A1 (de) * 1966-09-26 1970-02-12 Itt Ind Gmbh Deutsche Silizium-Planartransistor
US3704398A (en) * 1970-02-14 1972-11-28 Nippon Electric Co Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures
JPS5261968A (en) * 1975-11-18 1977-05-21 Matsushita Electronics Corp Transistor
JPH05261968A (ja) * 1992-01-09 1993-10-12 Nec Corp レーザプリンタ

Also Published As

Publication number Publication date
GB1600638A (en) 1981-10-21
FR2392500B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1984-11-16
AU518290B2 (en) 1981-09-24
DE2822166A1 (de) 1978-11-30
IT7823662A0 (it) 1978-05-22
IT1094695B (it) 1985-08-02
AU3635178A (en) 1979-11-29
NL181612B (nl) 1987-04-16
SE433547B (sv) 1984-05-28
NL7705729A (nl) 1978-11-28
SE7805782L (sv) 1978-11-26
JPS53145581A (en) 1978-12-18
DE2822166C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-12-15
NL181612C (nl) 1988-03-16
CA1097430A (en) 1981-03-10
FR2392500A1 (fr) 1978-12-22

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19971103