FR2392500A1 - Dispositif semi-conducteur comportant des doigts emetteurs de longueur variable - Google Patents

Dispositif semi-conducteur comportant des doigts emetteurs de longueur variable

Info

Publication number
FR2392500A1
FR2392500A1 FR7815569A FR7815569A FR2392500A1 FR 2392500 A1 FR2392500 A1 FR 2392500A1 FR 7815569 A FR7815569 A FR 7815569A FR 7815569 A FR7815569 A FR 7815569A FR 2392500 A1 FR2392500 A1 FR 2392500A1
Authority
FR
France
Prior art keywords
fingers
semiconductor device
device including
variable length
including sending
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7815569A
Other languages
English (en)
French (fr)
Other versions
FR2392500B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2392500A1 publication Critical patent/FR2392500A1/fr
Application granted granted Critical
Publication of FR2392500B1 publication Critical patent/FR2392500B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures

Landscapes

  • Bipolar Transistors (AREA)
FR7815569A 1977-05-25 1978-05-25 Dispositif semi-conducteur comportant des doigts emetteurs de longueur variable Granted FR2392500A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7705729,A NL181612C (nl) 1977-05-25 1977-05-25 Halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
FR2392500A1 true FR2392500A1 (fr) 1978-12-22
FR2392500B1 FR2392500B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1984-11-16

Family

ID=19828611

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7815569A Granted FR2392500A1 (fr) 1977-05-25 1978-05-25 Dispositif semi-conducteur comportant des doigts emetteurs de longueur variable

Country Status (10)

Country Link
JP (1) JPS53145581A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU518290B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1097430A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2822166A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (1) ES470066A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2392500A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1600638A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1094695B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL181612C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE433547B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2482369A1 (fr) * 1980-05-09 1981-11-13 Philips Nv Dispositif a transistor bipolaire comportant des sous-transistors munis chacun d'une resistance serie d'emetteur
FR2538168A1 (fr) * 1982-12-17 1984-06-22 Philips Nv Dispositif semi-conducteur protege contre le claquage du second genre, en particulier transistor de puissance
EP0309784A1 (de) * 1987-09-30 1989-04-05 Siemens Aktiengesellschaft Anschlussstreifenstruktur für Bipolar-Transistoren
FR2634948A1 (fr) * 1988-07-29 1990-02-02 Radiotechnique Compelec Transistor de puissance a emetteur multi-cellulaires
EP0326828A3 (en) * 1988-01-30 1990-07-25 Robert Bosch Gmbh Power transistor

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
DE3802767A1 (de) * 1988-01-30 1989-08-10 Bosch Gmbh Robert Elektronisches geraet
DE102004046630A1 (de) * 2004-09-25 2006-03-30 Robert Bosch Gmbh Integrierte Schaltung für gepulste Leistungsströme

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1081509A (en) * 1965-04-07 1967-08-31 Itt Transistor
DE1539871A1 (de) * 1966-09-26 1970-02-12 Itt Ind Gmbh Deutsche Silizium-Planartransistor
US3704398A (en) * 1970-02-14 1972-11-28 Nippon Electric Co Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures
JPS5261968A (en) * 1975-11-18 1977-05-21 Matsushita Electronics Corp Transistor
JPH05261968A (ja) * 1992-01-09 1993-10-12 Nec Corp レーザプリンタ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
USRE26803E (en) * 1963-11-19 1970-02-24 Hioh frequency power transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2482369A1 (fr) * 1980-05-09 1981-11-13 Philips Nv Dispositif a transistor bipolaire comportant des sous-transistors munis chacun d'une resistance serie d'emetteur
FR2538168A1 (fr) * 1982-12-17 1984-06-22 Philips Nv Dispositif semi-conducteur protege contre le claquage du second genre, en particulier transistor de puissance
EP0309784A1 (de) * 1987-09-30 1989-04-05 Siemens Aktiengesellschaft Anschlussstreifenstruktur für Bipolar-Transistoren
EP0326828A3 (en) * 1988-01-30 1990-07-25 Robert Bosch Gmbh Power transistor
FR2634948A1 (fr) * 1988-07-29 1990-02-02 Radiotechnique Compelec Transistor de puissance a emetteur multi-cellulaires

Also Published As

Publication number Publication date
AU518290B2 (en) 1981-09-24
IT7823662A0 (it) 1978-05-22
DE2822166C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-12-15
NL181612C (nl) 1988-03-16
NL181612B (nl) 1987-04-16
FR2392500B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1984-11-16
ES470066A1 (es) 1979-02-01
IT1094695B (it) 1985-08-02
AU3635178A (en) 1979-11-29
GB1600638A (en) 1981-10-21
NL7705729A (nl) 1978-11-28
SE433547B (sv) 1984-05-28
CA1097430A (en) 1981-03-10
DE2822166A1 (de) 1978-11-30
JPS53145581A (en) 1978-12-18
SE7805782L (sv) 1978-11-26

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ST Notification of lapse