FR2392500A1 - SEMICONDUCTOR DEVICE INCLUDING SENDING FINGERS OF VARIABLE LENGTH - Google Patents

SEMICONDUCTOR DEVICE INCLUDING SENDING FINGERS OF VARIABLE LENGTH

Info

Publication number
FR2392500A1
FR2392500A1 FR7815569A FR7815569A FR2392500A1 FR 2392500 A1 FR2392500 A1 FR 2392500A1 FR 7815569 A FR7815569 A FR 7815569A FR 7815569 A FR7815569 A FR 7815569A FR 2392500 A1 FR2392500 A1 FR 2392500A1
Authority
FR
France
Prior art keywords
fingers
semiconductor device
device including
variable length
including sending
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7815569A
Other languages
French (fr)
Other versions
FR2392500B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2392500A1 publication Critical patent/FR2392500A1/en
Application granted granted Critical
Publication of FR2392500B1 publication Critical patent/FR2392500B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0813—Non-interconnected multi-emitter structures

Abstract

Dans un transistor de puissance, les doigts émetteurs ont des longueurs allant en diminuant du bord du transistor vers le centre de celui-ci Cette configuration permet d'obtenir une réparation de température plus uniforme que dans le cas de doigts émetteurs de même longueur. Le transistor peut fonctionner dans une gamme de travail relativement étendue sans qu'il faille avoir recours à des résistances série comme on en utilise généralement dans le trajet de base ou d'émetteur en vue de la protection contre le << second breakdown >>.In a power transistor, the emitting fingers have lengths decreasing from the edge of the transistor towards the center thereof. This configuration makes it possible to obtain a more uniform temperature repair than in the case of emitting fingers of the same length. The transistor can operate over a relatively wide working range without the need for series resistors as are typically used in the base or emitter path for "second breakdown" protection.

FR7815569A 1977-05-25 1978-05-25 SEMICONDUCTOR DEVICE INCLUDING SENDING FINGERS OF VARIABLE LENGTH Granted FR2392500A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7705729,A NL181612C (en) 1977-05-25 1977-05-25 SEMICONDUCTOR DEVICE.

Publications (2)

Publication Number Publication Date
FR2392500A1 true FR2392500A1 (en) 1978-12-22
FR2392500B1 FR2392500B1 (en) 1984-11-16

Family

ID=19828611

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7815569A Granted FR2392500A1 (en) 1977-05-25 1978-05-25 SEMICONDUCTOR DEVICE INCLUDING SENDING FINGERS OF VARIABLE LENGTH

Country Status (10)

Country Link
JP (1) JPS53145581A (en)
AU (1) AU518290B2 (en)
CA (1) CA1097430A (en)
DE (1) DE2822166A1 (en)
ES (1) ES470066A1 (en)
FR (1) FR2392500A1 (en)
GB (1) GB1600638A (en)
IT (1) IT1094695B (en)
NL (1) NL181612C (en)
SE (1) SE433547B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2482369A1 (en) * 1980-05-09 1981-11-13 Philips Nv BIPOLAR TRANSISTOR DEVICE COMPRISING SUB-TRANSISTORS PROVIDED EACH WITH A SERIES TRANSMITTER RESISTOR
FR2538168A1 (en) * 1982-12-17 1984-06-22 Philips Nv SEMICONDUCTOR DEVICE PROTECTED AGAINST SECOND TYPE BREAKDOWN, IN PARTICULAR POWER TRANSISTOR
EP0309784A1 (en) * 1987-09-30 1989-04-05 Siemens Aktiengesellschaft Contact strip structure for bipolar transistors
EP0326828A2 (en) * 1988-01-30 1989-08-09 Robert Bosch Gmbh Power transistor
FR2634948A1 (en) * 1988-07-29 1990-02-02 Radiotechnique Compelec Power transistor with multi-cellular emitter

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
DE3802767A1 (en) * 1988-01-30 1989-08-10 Bosch Gmbh Robert ELECTRONIC DEVICE
DE102004046630A1 (en) * 2004-09-25 2006-03-30 Robert Bosch Gmbh Integrated circuit for pulsed power currents

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1081509A (en) * 1965-04-07 1967-08-31 Itt Transistor
DE1539871A1 (en) * 1966-09-26 1970-02-12 Itt Ind Gmbh Deutsche Silicon planar transistor
US3704398A (en) * 1970-02-14 1972-11-28 Nippon Electric Co Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures
JPS5261968A (en) * 1975-11-18 1977-05-21 Matsushita Electronics Corp Transistor
JPH05261968A (en) * 1992-01-09 1993-10-12 Nec Corp Laser printer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
USRE26803E (en) * 1963-11-19 1970-02-24 Hioh frequency power transistor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2482369A1 (en) * 1980-05-09 1981-11-13 Philips Nv BIPOLAR TRANSISTOR DEVICE COMPRISING SUB-TRANSISTORS PROVIDED EACH WITH A SERIES TRANSMITTER RESISTOR
FR2538168A1 (en) * 1982-12-17 1984-06-22 Philips Nv SEMICONDUCTOR DEVICE PROTECTED AGAINST SECOND TYPE BREAKDOWN, IN PARTICULAR POWER TRANSISTOR
EP0309784A1 (en) * 1987-09-30 1989-04-05 Siemens Aktiengesellschaft Contact strip structure for bipolar transistors
EP0326828A2 (en) * 1988-01-30 1989-08-09 Robert Bosch Gmbh Power transistor
EP0326828A3 (en) * 1988-01-30 1990-07-25 Robert Bosch Gmbh Power transistor
FR2634948A1 (en) * 1988-07-29 1990-02-02 Radiotechnique Compelec Power transistor with multi-cellular emitter

Also Published As

Publication number Publication date
FR2392500B1 (en) 1984-11-16
AU3635178A (en) 1979-11-29
DE2822166A1 (en) 1978-11-30
DE2822166C2 (en) 1988-12-15
CA1097430A (en) 1981-03-10
SE433547B (en) 1984-05-28
JPS53145581A (en) 1978-12-18
AU518290B2 (en) 1981-09-24
SE7805782L (en) 1978-11-26
ES470066A1 (en) 1979-02-01
NL181612C (en) 1988-03-16
NL7705729A (en) 1978-11-28
NL181612B (en) 1987-04-16
GB1600638A (en) 1981-10-21
IT7823662A0 (en) 1978-05-22
IT1094695B (en) 1985-08-02

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Legal Events

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CD Change of name or company name
ST Notification of lapse