DE2805247C2 - Vorrichtung zur Herstellung von Verbindungshalbleiter-Dünnschichten - Google Patents

Vorrichtung zur Herstellung von Verbindungshalbleiter-Dünnschichten

Info

Publication number
DE2805247C2
DE2805247C2 DE2805247A DE2805247A DE2805247C2 DE 2805247 C2 DE2805247 C2 DE 2805247C2 DE 2805247 A DE2805247 A DE 2805247A DE 2805247 A DE2805247 A DE 2805247A DE 2805247 C2 DE2805247 C2 DE 2805247C2
Authority
DE
Germany
Prior art keywords
substrate
crucibles
compound semiconductor
compound
vapor deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2805247A
Other languages
German (de)
English (en)
Other versions
DE2805247A1 (de
Inventor
Kiyoshi Mobara Chiba Morimoto
Toshinori Prof. Nagaokakyo Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Futaba Corp
Original Assignee
Futaba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Futaba Corp filed Critical Futaba Corp
Publication of DE2805247A1 publication Critical patent/DE2805247A1/de
Application granted granted Critical
Publication of DE2805247C2 publication Critical patent/DE2805247C2/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
DE2805247A 1977-02-12 1978-02-08 Vorrichtung zur Herstellung von Verbindungshalbleiter-Dünnschichten Expired DE2805247C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1443377A JPS5399762A (en) 1977-02-12 1977-02-12 Device for producing compound semiconductor film

Publications (2)

Publication Number Publication Date
DE2805247A1 DE2805247A1 (de) 1978-08-17
DE2805247C2 true DE2805247C2 (de) 1982-06-24

Family

ID=11860877

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2805247A Expired DE2805247C2 (de) 1977-02-12 1978-02-08 Vorrichtung zur Herstellung von Verbindungshalbleiter-Dünnschichten

Country Status (3)

Country Link
US (1) US4197814A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5399762A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2805247C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941510B2 (ja) * 1979-07-24 1984-10-08 双葉電子工業株式会社 酸化ベリリウム膜とその形成方法
DE2941908C2 (de) * 1979-10-17 1986-07-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden Solarzelle
US4406252A (en) * 1980-12-29 1983-09-27 Rockwell International Corporation Inductive heating arrangement for evaporating thin film alloy onto a substrate
JPS5943873A (ja) * 1982-09-04 1984-03-12 Konishiroku Photo Ind Co Ltd 蒸発材料収容器
JPH0817154B2 (ja) * 1983-11-07 1996-02-21 株式会社日立製作所 イオンビーム装置
US4560462A (en) * 1984-06-22 1985-12-24 Westinghouse Electric Corp. Apparatus for coating nuclear fuel pellets with a burnable absorber
JPS62260051A (ja) * 1986-05-02 1987-11-12 Hitachi Ltd 蒸気発生装置
KR900005118B1 (ko) * 1986-07-14 1990-07-19 미쓰비시전기주식회사 박막 형성장치
DE3628443C1 (de) * 1986-08-21 1988-02-11 Dornier System Gmbh Verfahren zur Erzeugung amorpher Schichten
JPH0816265B2 (ja) * 1987-03-27 1996-02-21 双葉電子工業株式会社 クラスタ検出装置
JPH075435B2 (ja) * 1987-03-31 1995-01-25 住友電気工業株式会社 超電導薄膜の製造方法及び装置
US4902572A (en) * 1988-04-19 1990-02-20 The Boeing Company Film deposition system
US4951604A (en) * 1989-02-17 1990-08-28 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
JP3169151B2 (ja) * 1992-10-26 2001-05-21 三菱電機株式会社 薄膜形成装置
KR100192228B1 (ko) * 1995-08-04 1999-06-15 한갑수 주석 산화물 박막의 제조방법
KR0182373B1 (ko) * 1996-07-18 1999-04-01 박원훈 박막 증착 장치
US6830626B1 (en) * 1999-10-22 2004-12-14 Kurt J. Lesker Company Method and apparatus for coating a substrate in a vacuum
US20050147753A1 (en) * 1999-10-22 2005-07-07 Kurt J. Lesker Company Material deposition system and a method for coating a substrate or thermally processing a material in a vacuum
US6669824B2 (en) 2000-07-10 2003-12-30 Unaxis Usa, Inc. Dual-scan thin film processing system
US6495010B2 (en) 2000-07-10 2002-12-17 Unaxis Usa, Inc. Differentially-pumped material processing system
GB0127251D0 (en) * 2001-11-13 2002-01-02 Nordiko Ltd Apparatus
US7700166B2 (en) * 2005-06-06 2010-04-20 Createc Fischer & Co. Gmbh Process for evaporating high-melting materials
US20100159132A1 (en) * 2008-12-18 2010-06-24 Veeco Instruments, Inc. Linear Deposition Source
WO2011065999A1 (en) * 2008-12-18 2011-06-03 Veeco Instruments Inc. Linear deposition source
US20100282167A1 (en) * 2008-12-18 2010-11-11 Veeco Instruments Inc. Linear Deposition Source
KR101084234B1 (ko) * 2009-11-30 2011-11-16 삼성모바일디스플레이주식회사 증착원, 이를 구비하는 증착 장치 및 박막 형성 방법
US20120052189A1 (en) * 2010-08-30 2012-03-01 Litian Liu Vapor deposition system
JP5815967B2 (ja) * 2011-03-31 2015-11-17 東京エレクトロン株式会社 基板洗浄装置及び真空処理システム

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2845894A (en) * 1953-03-04 1958-08-05 Oran T Mcilvaine Metallurgy
DE1046437B (de) * 1953-10-15 1958-12-11 Physikalisch Tech Werkstaetten Verfahren zum Verdampfen chemischer Verbindungen
NL103088C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1957-06-08
US3446936A (en) * 1966-01-03 1969-05-27 Sperry Rand Corp Evaporant source
US3583361A (en) * 1969-12-18 1971-06-08 Atomic Energy Commission Ion beam deposition system
US3751310A (en) * 1971-03-25 1973-08-07 Bell Telephone Labor Inc Germanium doped epitaxial films by the molecular beam method
BE792316A (fr) * 1971-12-07 1973-06-05 Philips Nv Procede permettant de realiser des miroirs pour lumiere froide
JPS50108184A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-02-04 1975-08-26
JPS5435920B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-06-10 1979-11-06
US4082636A (en) * 1975-01-13 1978-04-04 Sharp Kabushiki Kaisha Ion plating method
JPS52113379A (en) * 1976-03-19 1977-09-22 Hitachi Ltd Vacuum evaporation

Also Published As

Publication number Publication date
DE2805247A1 (de) 1978-08-17
JPS5641165B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-09-26
JPS5399762A (en) 1978-08-31
US4197814A (en) 1980-04-15

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
D2 Grant after examination
8339 Ceased/non-payment of the annual fee