JPS5399762A - Device for producing compound semiconductor film - Google Patents

Device for producing compound semiconductor film

Info

Publication number
JPS5399762A
JPS5399762A JP1443377A JP1443377A JPS5399762A JP S5399762 A JPS5399762 A JP S5399762A JP 1443377 A JP1443377 A JP 1443377A JP 1443377 A JP1443377 A JP 1443377A JP S5399762 A JPS5399762 A JP S5399762A
Authority
JP
Japan
Prior art keywords
semiconductor film
compound semiconductor
producing compound
producing
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1443377A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5641165B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Toshinori Takagi
Kiyoshi Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Futaba Corp
Original Assignee
Futaba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Futaba Corp filed Critical Futaba Corp
Priority to JP1443377A priority Critical patent/JPS5399762A/ja
Priority to US05/870,096 priority patent/US4197814A/en
Priority to DE2805247A priority patent/DE2805247C2/de
Publication of JPS5399762A publication Critical patent/JPS5399762A/ja
Publication of JPS5641165B2 publication Critical patent/JPS5641165B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
JP1443377A 1977-02-12 1977-02-12 Device for producing compound semiconductor film Granted JPS5399762A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1443377A JPS5399762A (en) 1977-02-12 1977-02-12 Device for producing compound semiconductor film
US05/870,096 US4197814A (en) 1977-02-12 1978-01-17 Apparatus for forming compound semiconductor thin-films
DE2805247A DE2805247C2 (de) 1977-02-12 1978-02-08 Vorrichtung zur Herstellung von Verbindungshalbleiter-Dünnschichten

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1443377A JPS5399762A (en) 1977-02-12 1977-02-12 Device for producing compound semiconductor film

Publications (2)

Publication Number Publication Date
JPS5399762A true JPS5399762A (en) 1978-08-31
JPS5641165B2 JPS5641165B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-09-26

Family

ID=11860877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1443377A Granted JPS5399762A (en) 1977-02-12 1977-02-12 Device for producing compound semiconductor film

Country Status (3)

Country Link
US (1) US4197814A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5399762A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2805247C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100421A (ja) * 1983-11-07 1985-06-04 Hitachi Ltd イオンビ−ム装置

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941510B2 (ja) * 1979-07-24 1984-10-08 双葉電子工業株式会社 酸化ベリリウム膜とその形成方法
DE2941908C2 (de) * 1979-10-17 1986-07-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden Solarzelle
US4406252A (en) * 1980-12-29 1983-09-27 Rockwell International Corporation Inductive heating arrangement for evaporating thin film alloy onto a substrate
JPS5943873A (ja) * 1982-09-04 1984-03-12 Konishiroku Photo Ind Co Ltd 蒸発材料収容器
US4560462A (en) * 1984-06-22 1985-12-24 Westinghouse Electric Corp. Apparatus for coating nuclear fuel pellets with a burnable absorber
JPS62260051A (ja) * 1986-05-02 1987-11-12 Hitachi Ltd 蒸気発生装置
KR900005118B1 (ko) * 1986-07-14 1990-07-19 미쓰비시전기주식회사 박막 형성장치
DE3628443C1 (de) * 1986-08-21 1988-02-11 Dornier System Gmbh Verfahren zur Erzeugung amorpher Schichten
JPH0816265B2 (ja) * 1987-03-27 1996-02-21 双葉電子工業株式会社 クラスタ検出装置
JPH075435B2 (ja) * 1987-03-31 1995-01-25 住友電気工業株式会社 超電導薄膜の製造方法及び装置
US4902572A (en) * 1988-04-19 1990-02-20 The Boeing Company Film deposition system
US4951604A (en) * 1989-02-17 1990-08-28 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
JP3169151B2 (ja) * 1992-10-26 2001-05-21 三菱電機株式会社 薄膜形成装置
KR100192228B1 (ko) * 1995-08-04 1999-06-15 한갑수 주석 산화물 박막의 제조방법
KR0182373B1 (ko) * 1996-07-18 1999-04-01 박원훈 박막 증착 장치
US6830626B1 (en) * 1999-10-22 2004-12-14 Kurt J. Lesker Company Method and apparatus for coating a substrate in a vacuum
US20050147753A1 (en) * 1999-10-22 2005-07-07 Kurt J. Lesker Company Material deposition system and a method for coating a substrate or thermally processing a material in a vacuum
US6669824B2 (en) 2000-07-10 2003-12-30 Unaxis Usa, Inc. Dual-scan thin film processing system
US6495010B2 (en) 2000-07-10 2002-12-17 Unaxis Usa, Inc. Differentially-pumped material processing system
GB0127251D0 (en) * 2001-11-13 2002-01-02 Nordiko Ltd Apparatus
US7700166B2 (en) * 2005-06-06 2010-04-20 Createc Fischer & Co. Gmbh Process for evaporating high-melting materials
US20100159132A1 (en) * 2008-12-18 2010-06-24 Veeco Instruments, Inc. Linear Deposition Source
WO2011065999A1 (en) * 2008-12-18 2011-06-03 Veeco Instruments Inc. Linear deposition source
US20100282167A1 (en) * 2008-12-18 2010-11-11 Veeco Instruments Inc. Linear Deposition Source
KR101084234B1 (ko) * 2009-11-30 2011-11-16 삼성모바일디스플레이주식회사 증착원, 이를 구비하는 증착 장치 및 박막 형성 방법
US20120052189A1 (en) * 2010-08-30 2012-03-01 Litian Liu Vapor deposition system
JP5815967B2 (ja) * 2011-03-31 2015-11-17 東京エレクトロン株式会社 基板洗浄装置及び真空処理システム

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50108184A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-02-04 1975-08-26

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2845894A (en) * 1953-03-04 1958-08-05 Oran T Mcilvaine Metallurgy
DE1046437B (de) * 1953-10-15 1958-12-11 Physikalisch Tech Werkstaetten Verfahren zum Verdampfen chemischer Verbindungen
NL103088C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1957-06-08
US3446936A (en) * 1966-01-03 1969-05-27 Sperry Rand Corp Evaporant source
US3583361A (en) * 1969-12-18 1971-06-08 Atomic Energy Commission Ion beam deposition system
US3751310A (en) * 1971-03-25 1973-08-07 Bell Telephone Labor Inc Germanium doped epitaxial films by the molecular beam method
BE792316A (fr) * 1971-12-07 1973-06-05 Philips Nv Procede permettant de realiser des miroirs pour lumiere froide
JPS5435920B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-06-10 1979-11-06
US4082636A (en) * 1975-01-13 1978-04-04 Sharp Kabushiki Kaisha Ion plating method
JPS52113379A (en) * 1976-03-19 1977-09-22 Hitachi Ltd Vacuum evaporation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50108184A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-02-04 1975-08-26

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100421A (ja) * 1983-11-07 1985-06-04 Hitachi Ltd イオンビ−ム装置

Also Published As

Publication number Publication date
DE2805247C2 (de) 1982-06-24
DE2805247A1 (de) 1978-08-17
JPS5641165B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-09-26
US4197814A (en) 1980-04-15

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