GB2011175B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB2011175B
GB2011175B GB7832604A GB7832604A GB2011175B GB 2011175 B GB2011175 B GB 2011175B GB 7832604 A GB7832604 A GB 7832604A GB 7832604 A GB7832604 A GB 7832604A GB 2011175 B GB2011175 B GB 2011175B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7832604A
Other versions
GB2011175A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
American Microsystems Holding Corp
Original Assignee
American Microsystems Holding Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Microsystems Holding Corp filed Critical American Microsystems Holding Corp
Publication of GB2011175A publication Critical patent/GB2011175A/en
Application granted granted Critical
Publication of GB2011175B publication Critical patent/GB2011175B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
GB7832604A 1977-12-27 1978-08-08 Semiconductor device Expired GB2011175B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86453677A 1977-12-27 1977-12-27

Publications (2)

Publication Number Publication Date
GB2011175A GB2011175A (en) 1979-07-04
GB2011175B true GB2011175B (en) 1982-02-10

Family

ID=25343489

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7832604A Expired GB2011175B (en) 1977-12-27 1978-08-08 Semiconductor device

Country Status (7)

Country Link
JP (1) JPS5492077A (en)
CA (1) CA1118892A (en)
DE (1) DE2842334A1 (en)
FR (1) FR2413789A1 (en)
GB (1) GB2011175B (en)
IT (1) IT7869937A0 (en)
NL (1) NL7808079A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2909820A1 (en) * 1979-03-13 1980-09-18 Siemens Ag SEMICONDUCTOR STORAGE WITH SINGLE TRANSISTOR CELLS IN V-MOS TECHNOLOGY
US4252579A (en) * 1979-05-07 1981-02-24 International Business Machines Corporation Method for making single electrode U-MOSFET random access memory utilizing reactive ion etching and polycrystalline deposition
US4335450A (en) * 1980-01-30 1982-06-15 International Business Machines Corporation Non-destructive read out field effect transistor memory cell system
US4423490A (en) * 1980-10-27 1983-12-27 Burroughs Corporation JFET Dynamic memory
JPS6135554A (en) * 1984-07-28 1986-02-20 Nippon Telegr & Teleph Corp <Ntt> Read only memory and manufacture therefor
US4997783A (en) * 1987-07-02 1991-03-05 Integrated Device Technology, Inc. Static ram cell with trench pull-down transistors and buried-layer ground plate
US4987090A (en) * 1987-07-02 1991-01-22 Integrated Device Technology, Inc. Static ram cell with trench pull-down transistors and buried-layer ground plate
US6963108B1 (en) * 2003-10-10 2005-11-08 Advanced Micro Devices, Inc. Recessed channel

Also Published As

Publication number Publication date
IT7869937A0 (en) 1978-12-22
CA1118892A (en) 1982-02-23
GB2011175A (en) 1979-07-04
NL7808079A (en) 1979-06-29
JPS5492077A (en) 1979-07-20
DE2842334A1 (en) 1979-07-05
FR2413789A1 (en) 1979-07-27

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee