DE2652103C2 - Integrierte Halbleiteranordnung für ein logisches Schaltungskonzept und Verfahren zu ihrer Herstellung - Google Patents

Integrierte Halbleiteranordnung für ein logisches Schaltungskonzept und Verfahren zu ihrer Herstellung

Info

Publication number
DE2652103C2
DE2652103C2 DE2652103A DE2652103A DE2652103C2 DE 2652103 C2 DE2652103 C2 DE 2652103C2 DE 2652103 A DE2652103 A DE 2652103A DE 2652103 A DE2652103 A DE 2652103A DE 2652103 C2 DE2652103 C2 DE 2652103C2
Authority
DE
Germany
Prior art keywords
base
regions
area
semiconductor arrangement
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2652103A
Other languages
German (de)
English (en)
Other versions
DE2652103A1 (de
Inventor
Horst Heinz Dipl.-Ing. Dr. 7032 Sindelfingen Berger
Siegfried Kurt Dipl.-Ing. Dr. 7000 Stuttgart Wiedmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
Original Assignee
IBM Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM Deutschland GmbH filed Critical IBM Deutschland GmbH
Priority to DE2652103A priority Critical patent/DE2652103C2/de
Priority to AT0470677A priority patent/AT382261B/de
Priority to US05/823,314 priority patent/US4158783A/en
Priority to FR7729891A priority patent/FR2371063A1/fr
Priority to CA287,816A priority patent/CA1092722A/en
Priority to BE181772A priority patent/BE859759A/xx
Priority to JP12464977A priority patent/JPS5363874A/ja
Priority to IT28930/77A priority patent/IT1115741B/it
Priority to NL7711778A priority patent/NL7711778A/xx
Priority to GB45634/77A priority patent/GB1592334A/en
Priority to BR7707519A priority patent/BR7707519A/pt
Priority to SE7712741A priority patent/SE7712741L/xx
Priority to DD77206078A priority patent/DD137771A5/xx
Priority to ES464138A priority patent/ES464138A1/es
Priority to SU772542550A priority patent/SU912065A3/ru
Publication of DE2652103A1 publication Critical patent/DE2652103A1/de
Application granted granted Critical
Publication of DE2652103C2 publication Critical patent/DE2652103C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/038—Diffusions-staged
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/167—Two diffusions in one hole

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
DE2652103A 1976-11-16 1976-11-16 Integrierte Halbleiteranordnung für ein logisches Schaltungskonzept und Verfahren zu ihrer Herstellung Expired DE2652103C2 (de)

Priority Applications (15)

Application Number Priority Date Filing Date Title
DE2652103A DE2652103C2 (de) 1976-11-16 1976-11-16 Integrierte Halbleiteranordnung für ein logisches Schaltungskonzept und Verfahren zu ihrer Herstellung
AT0470677A AT382261B (de) 1976-11-16 1977-07-01 Verfahren zur herstellung einer integrierten halbleiteranordnung fuer ein logisches schaltungskonzept
US05/823,314 US4158783A (en) 1976-11-16 1977-08-10 Current hogging injection logic with self-aligned output transistors
FR7729891A FR2371063A1 (fr) 1976-11-16 1977-09-29 Perfectionnements aux dispositifs integres a semi-conducteurs du type a injection de courant
CA287,816A CA1092722A (en) 1976-11-16 1977-09-29 Bi-polar integrated circuit structure and method of fabricating same
BE181772A BE859759A (fr) 1976-11-16 1977-10-14 Perfectionnements aux dispositifs integres a semi-conducteurs du type a injection de courant
JP12464977A JPS5363874A (en) 1976-11-16 1977-10-19 Bipolar transistor
IT28930/77A IT1115741B (it) 1976-11-16 1977-10-25 Struttura semiconduttrice integrata
NL7711778A NL7711778A (nl) 1976-11-16 1977-10-27 Geintegreerde halfgeleiderstructuur.
GB45634/77A GB1592334A (en) 1976-11-16 1977-11-02 Integrated circuits
BR7707519A BR7707519A (pt) 1976-11-16 1977-11-09 Disposicao integrada de semicondutores para um conceito de circuito logico com transistores bipolares e metodo para fabricacao da mesma
SE7712741A SE7712741L (sv) 1976-11-16 1977-11-10 Integrerat halvledararrangemang for logikkretsar med bipolertransistorer samt metod for tillverkning derav
DD77206078A DD137771A5 (de) 1976-11-16 1977-11-14 Halbleiteranordnung fuer ein logisches schaltungskonzept
ES464138A ES464138A1 (es) 1976-11-16 1977-11-15 Disposicion de semiconductor integrada para un esquema de circuito logico.
SU772542550A SU912065A3 (ru) 1976-11-16 1977-11-15 Способ изготовлени интегральных полупроводниковых схем

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2652103A DE2652103C2 (de) 1976-11-16 1976-11-16 Integrierte Halbleiteranordnung für ein logisches Schaltungskonzept und Verfahren zu ihrer Herstellung

Publications (2)

Publication Number Publication Date
DE2652103A1 DE2652103A1 (de) 1978-05-24
DE2652103C2 true DE2652103C2 (de) 1982-10-28

Family

ID=5993241

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2652103A Expired DE2652103C2 (de) 1976-11-16 1976-11-16 Integrierte Halbleiteranordnung für ein logisches Schaltungskonzept und Verfahren zu ihrer Herstellung

Country Status (15)

Country Link
US (1) US4158783A (oth)
JP (1) JPS5363874A (oth)
AT (1) AT382261B (oth)
BE (1) BE859759A (oth)
BR (1) BR7707519A (oth)
CA (1) CA1092722A (oth)
DD (1) DD137771A5 (oth)
DE (1) DE2652103C2 (oth)
ES (1) ES464138A1 (oth)
FR (1) FR2371063A1 (oth)
GB (1) GB1592334A (oth)
IT (1) IT1115741B (oth)
NL (1) NL7711778A (oth)
SE (1) SE7712741L (oth)
SU (1) SU912065A3 (oth)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4199776A (en) * 1978-08-24 1980-04-22 Rca Corporation Integrated injection logic with floating reinjectors
JPS55170895U (oth) * 1979-05-26 1980-12-08
US4338622A (en) * 1979-06-29 1982-07-06 International Business Machines Corporation Self-aligned semiconductor circuits and process therefor
US4794277A (en) * 1986-01-13 1988-12-27 Unitrode Corporation Integrated circuit under-voltage lockout
US5177029A (en) * 1989-03-28 1993-01-05 Matsushita Electric Works, Ltd. Method for manufacturing static induction type semiconductor device enhancement mode power

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7107040A (oth) * 1971-05-22 1972-11-24
NL7200294A (oth) * 1972-01-08 1973-07-10
US3919005A (en) * 1973-05-07 1975-11-11 Fairchild Camera Instr Co Method for fabricating double-diffused, lateral transistor
US3959809A (en) * 1974-05-10 1976-05-25 Signetics Corporation High inverse gain transistor
DE2446649A1 (de) * 1974-09-30 1976-04-15 Siemens Ag Bipolare logikschaltung
US3993513A (en) * 1974-10-29 1976-11-23 Fairchild Camera And Instrument Corporation Combined method for fabricating oxide-isolated vertical bipolar transistors and complementary oxide-isolated lateral bipolar transistors and the resulting structures
US4058419A (en) * 1974-12-27 1977-11-15 Tokyo Shibaura Electric, Co., Ltd. Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques
DE2509530C2 (de) * 1975-03-05 1985-05-23 Ibm Deutschland Gmbh, 7000 Stuttgart Halbleiteranordnung für die Grundbausteine eines hochintegrierbaren logischen Halbleiterschaltungskonzepts basierend auf Mehrfachkollektor-Umkehrtransistoren

Also Published As

Publication number Publication date
FR2371063A1 (fr) 1978-06-09
FR2371063B1 (oth) 1980-08-01
JPS5363874A (en) 1978-06-07
NL7711778A (nl) 1978-05-18
CA1092722A (en) 1980-12-30
ES464138A1 (es) 1978-12-16
IT1115741B (it) 1986-02-03
JPS5615589B2 (oth) 1981-04-10
DD137771A5 (de) 1979-09-19
DE2652103A1 (de) 1978-05-24
SU912065A3 (ru) 1982-03-07
US4158783A (en) 1979-06-19
SE7712741L (sv) 1978-05-17
BR7707519A (pt) 1978-08-01
ATA470677A (de) 1986-06-15
GB1592334A (en) 1981-07-08
BE859759A (fr) 1978-02-01
AT382261B (de) 1987-02-10

Similar Documents

Publication Publication Date Title
DE2212168C2 (de) Monolithisch integrierte Halbleiteranordnung
DE2212049C2 (de) Verfahren zur Herstellung einer Halbleiteranordnung und Verfahren zur Herstellung eines Transistors
DE3873839T2 (de) Mos-leistungstransistoranordnung.
DE69029942T2 (de) Verfahren zur Herstellung von MOS-Leistungstransistoren mit vertikalem Strom
DE2509530C2 (de) Halbleiteranordnung für die Grundbausteine eines hochintegrierbaren logischen Halbleiterschaltungskonzepts basierend auf Mehrfachkollektor-Umkehrtransistoren
DE2739586C2 (de) Statischer Inverter mit Isolierschicht-Feldeffekttransistoren und Verfahren zur Herstellung
DE1564218A1 (de) Verfahren zur Herstellung von Transistoren
DE3148323A1 (de) Halbleiterschaltung
DE2556668A1 (de) Halbleiter-speichervorrichtung
DE3736693C2 (de) Bipolarer Transistor mit Heteroübergang
DE19540665C2 (de) Halbleiterbauelement und Verfahren zu dessen Herstellung
DE2363089B2 (de) Speicherzelle mit Feldeffekttransistoren
DE2652103C2 (de) Integrierte Halbleiteranordnung für ein logisches Schaltungskonzept und Verfahren zu ihrer Herstellung
DE2531367C2 (oth)
DE69131390T2 (de) Verfahren zur Herstellung einer vergrabenen Drain- oder Kollektorzone für monolythische Halbleiteranordnungen
DE68916156T2 (de) Verfahren zum Herstellen eines Transistors aus Polysilicium.
DE2753882C2 (de) Digitale integrierte Schaltung
DE3139169C2 (oth)
DE69629456T2 (de) Feldeffekttransistor mit verminderter Verzögerungsänderung
DE2700587A1 (de) Monolithisch integrierte i hoch 2 l-speicherzelle
DE3006442C2 (oth)
DE3235467A1 (de) Halbleiteranordnung und verfahren zu deren herstellung
DE69111912T2 (de) Herstellungsverfahren eines Bipolartransistors, der umgekehrten Vorspannungen standhält.
DE2419817A1 (de) Verfahren zur herstellung bipolarer transistoren
DE4443933C2 (de) Halbleitereinrichtung mit einer IIL-Schaltung und Verfahren zum Herstellen derselben

Legal Events

Date Code Title Description
OD Request for examination
D2 Grant after examination
8339 Ceased/non-payment of the annual fee