AT382261B - Verfahren zur herstellung einer integrierten halbleiteranordnung fuer ein logisches schaltungskonzept - Google Patents
Verfahren zur herstellung einer integrierten halbleiteranordnung fuer ein logisches schaltungskonzeptInfo
- Publication number
- AT382261B AT382261B AT0470677A AT470677A AT382261B AT 382261 B AT382261 B AT 382261B AT 0470677 A AT0470677 A AT 0470677A AT 470677 A AT470677 A AT 470677A AT 382261 B AT382261 B AT 382261B
- Authority
- AT
- Austria
- Prior art keywords
- producing
- logical circuit
- integrated semiconductor
- semiconductor arrangement
- circuit concept
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/038—Diffusions-staged
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/167—Two diffusions in one hole
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2652103A DE2652103C2 (de) | 1976-11-16 | 1976-11-16 | Integrierte Halbleiteranordnung für ein logisches Schaltungskonzept und Verfahren zu ihrer Herstellung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ATA470677A ATA470677A (de) | 1986-06-15 |
| AT382261B true AT382261B (de) | 1987-02-10 |
Family
ID=5993241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT0470677A AT382261B (de) | 1976-11-16 | 1977-07-01 | Verfahren zur herstellung einer integrierten halbleiteranordnung fuer ein logisches schaltungskonzept |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US4158783A (de) |
| JP (1) | JPS5363874A (de) |
| AT (1) | AT382261B (de) |
| BE (1) | BE859759A (de) |
| BR (1) | BR7707519A (de) |
| CA (1) | CA1092722A (de) |
| DD (1) | DD137771A5 (de) |
| DE (1) | DE2652103C2 (de) |
| ES (1) | ES464138A1 (de) |
| FR (1) | FR2371063A1 (de) |
| GB (1) | GB1592334A (de) |
| IT (1) | IT1115741B (de) |
| NL (1) | NL7711778A (de) |
| SE (1) | SE7712741L (de) |
| SU (1) | SU912065A3 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4199776A (en) * | 1978-08-24 | 1980-04-22 | Rca Corporation | Integrated injection logic with floating reinjectors |
| JPS55170895U (de) * | 1979-05-26 | 1980-12-08 | ||
| US4338622A (en) * | 1979-06-29 | 1982-07-06 | International Business Machines Corporation | Self-aligned semiconductor circuits and process therefor |
| US4794277A (en) * | 1986-01-13 | 1988-12-27 | Unitrode Corporation | Integrated circuit under-voltage lockout |
| US5177029A (en) * | 1989-03-28 | 1993-01-05 | Matsushita Electric Works, Ltd. | Method for manufacturing static induction type semiconductor device enhancement mode power |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7107040A (de) * | 1971-05-22 | 1972-11-24 | ||
| NL7200294A (de) * | 1972-01-08 | 1973-07-10 | ||
| US3919005A (en) * | 1973-05-07 | 1975-11-11 | Fairchild Camera Instr Co | Method for fabricating double-diffused, lateral transistor |
| US3959809A (en) * | 1974-05-10 | 1976-05-25 | Signetics Corporation | High inverse gain transistor |
| DE2446649A1 (de) * | 1974-09-30 | 1976-04-15 | Siemens Ag | Bipolare logikschaltung |
| US3993513A (en) * | 1974-10-29 | 1976-11-23 | Fairchild Camera And Instrument Corporation | Combined method for fabricating oxide-isolated vertical bipolar transistors and complementary oxide-isolated lateral bipolar transistors and the resulting structures |
| US4058419A (en) * | 1974-12-27 | 1977-11-15 | Tokyo Shibaura Electric, Co., Ltd. | Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques |
| DE2509530C2 (de) * | 1975-03-05 | 1985-05-23 | Ibm Deutschland Gmbh, 7000 Stuttgart | Halbleiteranordnung für die Grundbausteine eines hochintegrierbaren logischen Halbleiterschaltungskonzepts basierend auf Mehrfachkollektor-Umkehrtransistoren |
-
1976
- 1976-11-16 DE DE2652103A patent/DE2652103C2/de not_active Expired
-
1977
- 1977-07-01 AT AT0470677A patent/AT382261B/de not_active IP Right Cessation
- 1977-08-10 US US05/823,314 patent/US4158783A/en not_active Expired - Lifetime
- 1977-09-29 FR FR7729891A patent/FR2371063A1/fr active Granted
- 1977-09-29 CA CA287,816A patent/CA1092722A/en not_active Expired
- 1977-10-14 BE BE181772A patent/BE859759A/xx not_active IP Right Cessation
- 1977-10-19 JP JP12464977A patent/JPS5363874A/ja active Granted
- 1977-10-25 IT IT28930/77A patent/IT1115741B/it active
- 1977-10-27 NL NL7711778A patent/NL7711778A/xx not_active Application Discontinuation
- 1977-11-02 GB GB45634/77A patent/GB1592334A/en not_active Expired
- 1977-11-09 BR BR7707519A patent/BR7707519A/pt unknown
- 1977-11-10 SE SE7712741A patent/SE7712741L/xx not_active Application Discontinuation
- 1977-11-14 DD DD77206078A patent/DD137771A5/de unknown
- 1977-11-15 SU SU772542550A patent/SU912065A3/ru active
- 1977-11-15 ES ES464138A patent/ES464138A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2652103A1 (de) | 1978-05-24 |
| SE7712741L (sv) | 1978-05-17 |
| JPS5363874A (en) | 1978-06-07 |
| US4158783A (en) | 1979-06-19 |
| ES464138A1 (es) | 1978-12-16 |
| IT1115741B (it) | 1986-02-03 |
| SU912065A3 (ru) | 1982-03-07 |
| DE2652103C2 (de) | 1982-10-28 |
| FR2371063A1 (fr) | 1978-06-09 |
| FR2371063B1 (de) | 1980-08-01 |
| DD137771A5 (de) | 1979-09-19 |
| ATA470677A (de) | 1986-06-15 |
| BR7707519A (pt) | 1978-08-01 |
| CA1092722A (en) | 1980-12-30 |
| BE859759A (fr) | 1978-02-01 |
| JPS5615589B2 (de) | 1981-04-10 |
| NL7711778A (nl) | 1978-05-18 |
| GB1592334A (en) | 1981-07-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee |