IT1115741B - Struttura semiconduttrice integrata - Google Patents

Struttura semiconduttrice integrata

Info

Publication number
IT1115741B
IT1115741B IT28930/77A IT2893077A IT1115741B IT 1115741 B IT1115741 B IT 1115741B IT 28930/77 A IT28930/77 A IT 28930/77A IT 2893077 A IT2893077 A IT 2893077A IT 1115741 B IT1115741 B IT 1115741B
Authority
IT
Italy
Prior art keywords
semiconductive structure
integrated semiconductive
integrated
semiconductive
Prior art date
Application number
IT28930/77A
Other languages
English (en)
Italian (it)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1115741B publication Critical patent/IT1115741B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63Combinations of vertical and lateral BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/038Diffusions-staged
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/106Masks, special
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/167Two diffusions in one hole
IT28930/77A 1976-11-16 1977-10-25 Struttura semiconduttrice integrata IT1115741B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2652103A DE2652103C2 (de) 1976-11-16 1976-11-16 Integrierte Halbleiteranordnung für ein logisches Schaltungskonzept und Verfahren zu ihrer Herstellung

Publications (1)

Publication Number Publication Date
IT1115741B true IT1115741B (it) 1986-02-03

Family

ID=5993241

Family Applications (1)

Application Number Title Priority Date Filing Date
IT28930/77A IT1115741B (it) 1976-11-16 1977-10-25 Struttura semiconduttrice integrata

Country Status (15)

Country Link
US (1) US4158783A (oth)
JP (1) JPS5363874A (oth)
AT (1) AT382261B (oth)
BE (1) BE859759A (oth)
BR (1) BR7707519A (oth)
CA (1) CA1092722A (oth)
DD (1) DD137771A5 (oth)
DE (1) DE2652103C2 (oth)
ES (1) ES464138A1 (oth)
FR (1) FR2371063A1 (oth)
GB (1) GB1592334A (oth)
IT (1) IT1115741B (oth)
NL (1) NL7711778A (oth)
SE (1) SE7712741L (oth)
SU (1) SU912065A3 (oth)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4199776A (en) * 1978-08-24 1980-04-22 Rca Corporation Integrated injection logic with floating reinjectors
JPS55170895U (oth) * 1979-05-26 1980-12-08
US4338622A (en) * 1979-06-29 1982-07-06 International Business Machines Corporation Self-aligned semiconductor circuits and process therefor
US4794277A (en) * 1986-01-13 1988-12-27 Unitrode Corporation Integrated circuit under-voltage lockout
US5177029A (en) * 1989-03-28 1993-01-05 Matsushita Electric Works, Ltd. Method for manufacturing static induction type semiconductor device enhancement mode power

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7107040A (oth) * 1971-05-22 1972-11-24
NL7200294A (oth) * 1972-01-08 1973-07-10
US3919005A (en) * 1973-05-07 1975-11-11 Fairchild Camera Instr Co Method for fabricating double-diffused, lateral transistor
US3959809A (en) * 1974-05-10 1976-05-25 Signetics Corporation High inverse gain transistor
DE2446649A1 (de) * 1974-09-30 1976-04-15 Siemens Ag Bipolare logikschaltung
US3993513A (en) * 1974-10-29 1976-11-23 Fairchild Camera And Instrument Corporation Combined method for fabricating oxide-isolated vertical bipolar transistors and complementary oxide-isolated lateral bipolar transistors and the resulting structures
US4058419A (en) * 1974-12-27 1977-11-15 Tokyo Shibaura Electric, Co., Ltd. Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques
DE2509530C2 (de) * 1975-03-05 1985-05-23 Ibm Deutschland Gmbh, 7000 Stuttgart Halbleiteranordnung für die Grundbausteine eines hochintegrierbaren logischen Halbleiterschaltungskonzepts basierend auf Mehrfachkollektor-Umkehrtransistoren

Also Published As

Publication number Publication date
FR2371063A1 (fr) 1978-06-09
FR2371063B1 (oth) 1980-08-01
JPS5363874A (en) 1978-06-07
NL7711778A (nl) 1978-05-18
CA1092722A (en) 1980-12-30
ES464138A1 (es) 1978-12-16
JPS5615589B2 (oth) 1981-04-10
DD137771A5 (de) 1979-09-19
DE2652103A1 (de) 1978-05-24
DE2652103C2 (de) 1982-10-28
SU912065A3 (ru) 1982-03-07
US4158783A (en) 1979-06-19
SE7712741L (sv) 1978-05-17
BR7707519A (pt) 1978-08-01
ATA470677A (de) 1986-06-15
GB1592334A (en) 1981-07-08
BE859759A (fr) 1978-02-01
AT382261B (de) 1987-02-10

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