DE2508802A1 - Verfahren zum abscheiden von elementarem silicium - Google Patents

Verfahren zum abscheiden von elementarem silicium

Info

Publication number
DE2508802A1
DE2508802A1 DE19752508802 DE2508802A DE2508802A1 DE 2508802 A1 DE2508802 A1 DE 2508802A1 DE 19752508802 DE19752508802 DE 19752508802 DE 2508802 A DE2508802 A DE 2508802A DE 2508802 A1 DE2508802 A1 DE 2508802A1
Authority
DE
Germany
Prior art keywords
silicon
reaction gas
deposited
additional element
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19752508802
Other languages
German (de)
English (en)
Inventor
Konrad Dipl Chem Dr P Reuschel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE19752508802 priority Critical patent/DE2508802A1/de
Priority to US05/644,963 priority patent/US4068020A/en
Priority to JP2105776A priority patent/JPS5636123B2/ja
Publication of DE2508802A1 publication Critical patent/DE2508802A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/016—Catalyst
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/073—Hollow body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/903—Catalyst aided deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
  • Photovoltaic Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE19752508802 1975-02-28 1975-02-28 Verfahren zum abscheiden von elementarem silicium Withdrawn DE2508802A1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE19752508802 DE2508802A1 (de) 1975-02-28 1975-02-28 Verfahren zum abscheiden von elementarem silicium
US05/644,963 US4068020A (en) 1975-02-28 1975-12-29 Method of depositing elemental amorphous silicon
JP2105776A JPS5636123B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-02-28 1976-02-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752508802 DE2508802A1 (de) 1975-02-28 1975-02-28 Verfahren zum abscheiden von elementarem silicium

Publications (1)

Publication Number Publication Date
DE2508802A1 true DE2508802A1 (de) 1976-09-09

Family

ID=5940114

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752508802 Withdrawn DE2508802A1 (de) 1975-02-28 1975-02-28 Verfahren zum abscheiden von elementarem silicium

Country Status (3)

Country Link
US (1) US4068020A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5636123B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2508802A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2432765A1 (fr) * 1978-03-16 1980-02-29 Energy Conversion Devices Inc Procede de fabrication d'un film semi-conducteur et film semi-conducteur en faisant application
FR2457914A1 (fr) * 1979-05-30 1980-12-26 Siemens Ag Procede pour la fabrication du silicium possedant des proprietes semiconductrices
EP0062079A4 (en) * 1980-10-15 1984-02-16 Agency Ind Science Techn THIN SILICONE FILM AND METHOD FOR THE PRODUCTION THEREOF.
EP0073075A3 (en) * 1981-08-03 1984-08-22 N.V. Philips' Gloeilampenfabrieken Semiconductor device comprising polycrystalline silicon and method of producing the same

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4148931A (en) * 1976-03-08 1979-04-10 Siemens Aktiengesellschaft Process for depositing elemental silicon semiconductor material from a gas phase
US4196438A (en) * 1976-09-29 1980-04-01 Rca Corporation Article and device having an amorphous silicon containing a halogen and method of fabrication
US4179528A (en) * 1977-05-18 1979-12-18 Eastman Kodak Company Method of making silicon device with uniformly thick polysilicon
US4485389A (en) * 1978-03-08 1984-11-27 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
SE7803079L (sv) * 1978-03-16 1979-09-17 Lindstroem O Framstellning av slipmedelspartiklar
DE3016807A1 (de) * 1980-05-02 1981-11-05 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur herstellung von silizium
US4455325A (en) * 1981-03-16 1984-06-19 Fairchild Camera And Instrument Corporation Method of inducing flow or densification of phosphosilicate glass for integrated circuits
US5391893A (en) * 1985-05-07 1995-02-21 Semicoductor Energy Laboratory Co., Ltd. Nonsingle crystal semiconductor and a semiconductor device using such semiconductor
US5043772A (en) * 1985-05-07 1991-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photo-electrically-sensitive device
US4582560A (en) * 1982-12-06 1986-04-15 Sri International In situ production of silicon crystals on substrate for use in solar cell construction
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
US5753542A (en) 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
US5962869A (en) * 1988-09-28 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
JPH01241175A (ja) * 1988-03-23 1989-09-26 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタの製造方法
JPH0729874B2 (ja) * 1989-11-04 1995-04-05 コマツ電子金属株式会社 多結晶シリコン製造装置の芯線間接続用ブリッジ
IT1246772B (it) * 1989-12-26 1994-11-26 Advanced Silicon Materials Inc ''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno''
US5210050A (en) 1990-10-15 1993-05-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a semiconductor film
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950001360B1 (ko) * 1990-11-26 1995-02-17 가부시키가이샤 한도오따이 에네루기 겐큐쇼 전기 광학장치와 그 구동방법
US7154147B1 (en) 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US8106867B2 (en) 1990-11-26 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US7576360B2 (en) * 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
EP0499979A3 (en) * 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JP2794499B2 (ja) 1991-03-26 1998-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2845303B2 (ja) 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 半導体装置とその作製方法
JP2814161B2 (ja) 1992-04-28 1998-10-22 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置およびその駆動方法
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6413805B1 (en) 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
JP3450376B2 (ja) 1993-06-12 2003-09-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5923962A (en) * 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
TW264575B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
CN100472752C (zh) 1993-12-02 2009-03-25 株式会社半导体能源研究所 半导体器件的制造方法
US6798023B1 (en) * 1993-12-02 2004-09-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
TW272319B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1993-12-20 1996-03-11 Sharp Kk
KR100319332B1 (ko) * 1993-12-22 2002-04-22 야마자끼 순페이 반도체장치및전자광학장치
US6884698B1 (en) 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
JP2900229B2 (ja) * 1994-12-27 1999-06-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法および電気光学装置
US5834327A (en) * 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3645379B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6180439B1 (en) 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6465287B1 (en) 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
RU2010143546A (ru) * 2008-03-26 2012-05-10 ДжиТи СОЛАР, ИНКОРПОРЕЙТЕД (US) Реакторная система с золотым покрытием для осаждения поликристаллического кремния и способ
KR101623458B1 (ko) * 2008-03-26 2016-05-23 지티에이티 코포레이션 화학 증착 반응기의 가스 분배 시스템 및 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2032878A1 (de) * 1970-07-02 1972-01-05 Siemens AG, 1000 Berlin u. 8000 München Verfahren zum Herstellen von versetzungsarmen Siliciumeinkristallen

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE666629A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1964-08-04
DE1261842B (de) * 1964-12-12 1968-02-29 Siemens Ag Verfahren zum Herstellen von hochreinem Silicium
US3930067A (en) * 1966-04-16 1975-12-30 Philips Corp Method of providing polycrystalline layers of elementtary substances on substrates
DE1614410B2 (de) * 1967-01-25 1973-12-13 Siemens Ag, 1000 Berlin U. 8000 Muenchen Halbleiterbauelement
US3485684A (en) * 1967-03-30 1969-12-23 Trw Semiconductors Inc Dislocation enhancement control of silicon by introduction of large diameter atomic metals
US3725148A (en) * 1970-08-31 1973-04-03 D Kendall Individual device tuning using localized solid-state reactions
US3836999A (en) * 1970-09-21 1974-09-17 Semiconductor Res Found Semiconductor with grown layer relieved in lattice strain
US3734770A (en) * 1970-12-14 1973-05-22 Motorola Inc Nitrogen nucleation process for the chemical vapor deposition of polycrystalline silicon from sici4
US3862852A (en) * 1973-06-01 1975-01-28 Fairchild Camera Instr Co Method of obtaining high-quality thick films of polycrystalline silicone from dielectric isolation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2032878A1 (de) * 1970-07-02 1972-01-05 Siemens AG, 1000 Berlin u. 8000 München Verfahren zum Herstellen von versetzungsarmen Siliciumeinkristallen

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Hollemann-Wiberg: Lehrbuch der anorganischen Chemie, 1955, S. 318/319 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2432765A1 (fr) * 1978-03-16 1980-02-29 Energy Conversion Devices Inc Procede de fabrication d'un film semi-conducteur et film semi-conducteur en faisant application
FR2457914A1 (fr) * 1979-05-30 1980-12-26 Siemens Ag Procede pour la fabrication du silicium possedant des proprietes semiconductrices
EP0062079A4 (en) * 1980-10-15 1984-02-16 Agency Ind Science Techn THIN SILICONE FILM AND METHOD FOR THE PRODUCTION THEREOF.
EP0073075A3 (en) * 1981-08-03 1984-08-22 N.V. Philips' Gloeilampenfabrieken Semiconductor device comprising polycrystalline silicon and method of producing the same

Also Published As

Publication number Publication date
JPS51110486A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-09-30
US4068020A (en) 1978-01-10
JPS5636123B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-08-21

Similar Documents

Publication Publication Date Title
DE2508802A1 (de) Verfahren zum abscheiden von elementarem silicium
DE2820824A1 (de) Amorpher halbleiter
DE112009000328B4 (de) Verfahren zum Aufwachsen eines Siliziumcarbideinkristalls
DE1141724C2 (de) Verfahren zum Herstellen eines p-n-UEbergangs in einer einkristallinen Halbleiteranordnung
DE112010000867B4 (de) Herstellungsverfahren für SiC-Einkristall vom n-Typ, dadurch erhaltener SiC-Einkristall vom n-Typ und dessen Anwendung
DE1185293B (de) Verfahren zum Herstellen einer Halbleiteranordnung
DE974364C (de) Verfahren zur Herstellung von P-N-Schichten in Halbleiterkoerpern durch Eintauchen in eine Schmelze
DE1924825A1 (de) Verfahren zum Niederschlagen eines Halbleitermaterials
DE1048638B (de) Verfahren zur Herstellung von Halbleitereinkristallen, insbesondere von Silizium durch thermische Zersetzung oder Reduktion
DE2251938C2 (de) Legierung aus einer festen Lösung zur thermoelektrischen Energieumwandlung
DE1225148B (de) Verfahren zum Niederschlagen eines halbleitenden Elementes und eines Aktivator-stoffes aus einem Reaktionsgas
DE1922892A1 (de) Verfahren zum Zuechten epitaktischer Filme
DE2154386A1 (de) Verfahren zum Herstellen einer epitaktischen Schicht auf einem Halbleitersubstrat, bei dem das Selbstdotieren beim Aufwachsen der Schicht auf ein Mindestmaß verringert wird
DE1260032B (de) Verfahren zur Bildung einer gleichrichtenden Sperrschicht in einem Halbleiterscheibchen
DE1667604B1 (de) Verfahren zur herstellung von kristallinem cadmiumtellurid
DE1131808B (de) Verfahren zum Herstellen von n-leitenden Halbleiterkoerpern von Transistoren od. dgl. aus Elementen der IV. Gruppe des Periodischen Systems, insbesondere Germanium oder Silizium
DE112020004152T5 (de) Verfahren zum Bilden einer Schicht und zum Herstellen einer Halbleitervorrichtung
DE2422251A1 (de) Verfahren und vorrichtumg zum herstellen von dotierten cadmiumtellurideinkristallen
DE2455012C3 (de) Verfahren zur Herstellung von Silicium
DE1232558B (de) Verfahren zum Herstellen von kristallinem, insbesondere einkristallinem Bor
DE2214996A1 (de) Verfahren zum Herabsetzen der Wirkungen der Ausdiffusion bei der Herstellung einer epitaktischen Halbleiterschicht
AT222702B (de) Verfahren zur Herstellen einer Halbleiteranordnung
DES0033971MA (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE2409005C3 (de) Verfahren zum epitaktischen Aufwachsen von Halbleiter-Siliciumcarbid
DE1544238A1 (de) Halbleiterelement mit einer stabilen dielektrischen Schutzschicht sowie Verfahren zur Herstellung desselben

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: C30B 25/00

8120 Willingness to grant licences paragraph 23
8139 Disposal/non-payment of the annual fee