IT1246772B - ''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno'' - Google Patents

''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno''

Info

Publication number
IT1246772B
IT1246772B IT02253690A IT2253690A IT1246772B IT 1246772 B IT1246772 B IT 1246772B IT 02253690 A IT02253690 A IT 02253690A IT 2253690 A IT2253690 A IT 2253690A IT 1246772 B IT1246772 B IT 1246772B
Authority
IT
Italy
Prior art keywords
waterproof
hydrogen
coating layer
external coating
graphite
Prior art date
Application number
IT02253690A
Other languages
English (en)
Other versions
IT9022536A1 (it
IT9022536A0 (it
Inventor
Michael Fenton Jernegan
Lyle Cook Winterton
Original Assignee
Advanced Silicon Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Silicon Materials Inc filed Critical Advanced Silicon Materials Inc
Publication of IT9022536A0 publication Critical patent/IT9022536A0/it
Publication of IT9022536A1 publication Critical patent/IT9022536A1/it
Application granted granted Critical
Publication of IT1246772B publication Critical patent/IT1246772B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C01B35/04—Metal borides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
IT02253690A 1989-12-26 1990-12-24 ''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno'' IT1246772B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US45673089A 1989-12-26 1989-12-26

Publications (3)

Publication Number Publication Date
IT9022536A0 IT9022536A0 (it) 1990-12-24
IT9022536A1 IT9022536A1 (it) 1992-06-24
IT1246772B true IT1246772B (it) 1994-11-26

Family

ID=23813914

Family Applications (1)

Application Number Title Priority Date Filing Date
IT02253690A IT1246772B (it) 1989-12-26 1990-12-24 ''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno''

Country Status (5)

Country Link
US (1) US5284640A (it)
JP (1) JP2671235B2 (it)
KR (1) KR950013069B1 (it)
DE (1) DE4041901A1 (it)
IT (1) IT1246772B (it)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950013069B1 (ko) * 1989-12-26 1995-10-24 어드밴스드 실리콘 머티어리얼즈 인코포레이티드 수소 침투 방지용 외부 코팅층을 갖는 흑연 척 및 탄소가 거의 없는 다결정 실리콘 제조 방법
DE69208303D1 (de) * 1991-08-29 1996-03-28 Ucar Carbon Tech Mit glasigem Kohlenstoff überzogene Graphit-Spannvorrichtung zum Gebrauch bei der Erzeugung von polykristallinem Silizium
US20040173597A1 (en) * 2003-03-03 2004-09-09 Manoj Agrawal Apparatus for contacting gases at high temperature
US7732012B2 (en) * 2004-06-22 2010-06-08 Shin-Etsu Film Co., Ltd Method for manufacturing polycrystalline silicon, and polycrystalline silicon for solar cells manufactured by the method
KR100768147B1 (ko) * 2006-05-11 2007-10-18 한국화학연구원 혼합된 코어수단을 이용한 다결정 실리콘 봉의 제조방법과그 제조장치
KR100768148B1 (ko) * 2006-05-22 2007-10-17 한국화학연구원 금속 코어수단을 이용한 다결정 실리콘 봉의 제조방법
EP2108619B1 (en) * 2008-03-21 2011-06-22 Mitsubishi Materials Corporation Polycrystalline silicon reactor
RU2010143546A (ru) * 2008-03-26 2012-05-10 ДжиТи СОЛАР, ИНКОРПОРЕЙТЕД (US) Реакторная система с золотым покрытием для осаждения поликристаллического кремния и способ
TWI458854B (zh) * 2008-06-23 2014-11-01 Gtat Corp 在化學氣相沉積反應器中用於管絲的夾頭及電橋之連接點
DE102009021825B3 (de) * 2009-05-18 2010-08-05 Kgt Graphit Technologie Gmbh Aufnahmekegel für Silizium-Anzuchtstäbe
KR20120085278A (ko) * 2009-10-09 2012-07-31 헴로크세미컨덕터코포레이션 Ｃｖｄ 장치
WO2011044441A1 (en) * 2009-10-09 2011-04-14 Hemlock Semiconductor Corporation Cvd apparatus with electrode
TW201127984A (en) * 2009-10-09 2011-08-16 Hemlock Semiconductor Corp Manufacturing apparatus for depositing a material and an electrode for use therein
DE102010003068A1 (de) * 2010-03-19 2011-09-22 Wacker Chemie Ag Verfahren zur Herstellung von rissfreien polykristallinen Siliciumstäben
DE102010003064A1 (de) 2010-03-19 2011-09-22 Wacker Chemie Ag Graphitelektrode
DE102010003069A1 (de) * 2010-03-19 2011-09-22 Wacker Chemie Ag Kegelförmige Graphitelektrode mit hochgezogenem Rand
US10494714B2 (en) * 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
DE102011084372A1 (de) 2011-10-12 2012-02-09 Wacker Chemie Ag Vorrichtung für die Abscheidung von polykristallinem Silicium auf Dünnstäben
KR101435875B1 (ko) * 2012-03-12 2014-09-01 (주)아폴로테크 폴리실리콘 제조용 흑연척 재활용 방법
WO2014011647A1 (en) * 2012-07-10 2014-01-16 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and a socket for use therein
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
US10450649B2 (en) 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
JP2016016999A (ja) 2014-07-04 2016-02-01 信越化学工業株式会社 多結晶シリコン棒製造用のシリコン芯線および多結晶シリコン棒の製造装置
JP6373724B2 (ja) * 2014-11-04 2018-08-15 株式会社トクヤマ 芯線ホルダ及びシリコンの製造方法
CN105384172B (zh) * 2015-12-29 2017-09-22 哈尔滨工业大学 一种改良西门子法多晶硅还原炉用石墨夹头及其使用方法
JP7178209B2 (ja) * 2018-08-22 2022-11-25 株式会社Uacj 熱交換器の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1223804B (de) * 1961-01-26 1966-09-01 Siemens Ag Vorrichtung zur Gewinnung reinen Halbleitermaterials, wie Silicium
US3329527A (en) * 1963-09-13 1967-07-04 Monsanto Co Graphite heating elements and method of conditioning the heating surfaces thereof
US3406044A (en) * 1965-01-04 1968-10-15 Monsanto Co Resistance heating elements and method of conditioning the heating surfaces thereof
US3447902A (en) * 1966-04-04 1969-06-03 Motorola Inc Single crystal silicon rods
DE2508802A1 (de) * 1975-02-28 1976-09-09 Siemens Ag Verfahren zum abscheiden von elementarem silicium
JPS53108029A (en) * 1977-03-03 1978-09-20 Komatsu Mfg Co Ltd Method of making high purity silicon having uniform shape
US4621017A (en) * 1982-04-15 1986-11-04 Kennecott Corporation Corrosion and wear resistant graphite material and method of manufacture
JPS63123806A (ja) * 1986-11-11 1988-05-27 Mitsubishi Metal Corp 多結晶シリコンの製造方法
KR950013069B1 (ko) * 1989-12-26 1995-10-24 어드밴스드 실리콘 머티어리얼즈 인코포레이티드 수소 침투 방지용 외부 코팅층을 갖는 흑연 척 및 탄소가 거의 없는 다결정 실리콘 제조 방법

Also Published As

Publication number Publication date
DE4041901C2 (it) 1993-04-08
JPH069295A (ja) 1994-01-18
IT9022536A1 (it) 1992-06-24
US5284640A (en) 1994-02-08
JP2671235B2 (ja) 1997-10-29
DE4041901A1 (de) 1991-06-27
KR950013069B1 (ko) 1995-10-24
KR910011636A (ko) 1991-08-07
IT9022536A0 (it) 1990-12-24

Similar Documents

Publication Publication Date Title
IT1246772B (it) ''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno''
GB2195270B (en) Marking of articles with photochromic compounds
DE3568517D1 (en) Improvements relating to the fabrication of optical devices
IT1165392B (it) Processo per ridurre la porosita' e la scabrosita' superficiale di substrati ceramici
BR9305730A (pt) Célula foto-voltáica com camada delgada de Cds
DE3588086D1 (de) Supraleiteranordnung
PT71423A (fr) Cathode pour la production electrolitique d'hydrogene
ES512070A0 (es) "perfeccionamientos en la construccion de accesos a torres"
FR2583346B1 (fr) Instrument d'ecriture
AU7983987A (en) Cache storage priority
GB2167564B (en) Method of mapping the nuclear magnetic properties of an object to be examined
IT1184213B (it) Tenuta per stato di inattivita'
FR2572843B1 (fr) Aimant supraconducteur
BR8900940A (pt) Composicao organica estavel
JPS6451305A (en) Manufacture of superconductive thin layer
KR870700517A (ko) 펜촉의 구조
ES542582A0 (es) Grua torre giratoria
IT8567294A0 (it) Gruppo elettrochimico
FR2614680B1 (fr) Absorbeur-stockeur souple d'energie solaire
GB2169379B (en) Takeup spindle
MA21337A1 (fr) Conversion de matiere pyrophore de p4 °5
IL89718A0 (en) Formation of superconducting metal oxide film by pyrolysis
IT1183083B (it) Gruppo di figure giocatto specialmente presepe
IT1217618B (it) Apparecchiatura per effettuare biopsie cito istologiche
RO89230A2 (ro) Generator de acetilena

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227