BR9305730A - Célula foto-voltáica com camada delgada de Cds - Google Patents
Célula foto-voltáica com camada delgada de CdsInfo
- Publication number
- BR9305730A BR9305730A BR9305730A BR9305730A BR9305730A BR 9305730 A BR9305730 A BR 9305730A BR 9305730 A BR9305730 A BR 9305730A BR 9305730 A BR9305730 A BR 9305730A BR 9305730 A BR9305730 A BR 9305730A
- Authority
- BR
- Brazil
- Prior art keywords
- cds
- photo
- thin layer
- voltage cell
- cell
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/819,882 US5279678A (en) | 1992-01-13 | 1992-01-13 | Photovoltaic cell with thin CS layer |
PCT/US1993/000231 WO1993014523A1 (en) | 1992-01-13 | 1993-01-13 | PHOTOVOLTAIC CELL WITH THIN CdS LAYER |
Publications (1)
Publication Number | Publication Date |
---|---|
BR9305730A true BR9305730A (pt) | 1997-01-28 |
Family
ID=25229330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR9305730A BR9305730A (pt) | 1992-01-13 | 1993-01-13 | Célula foto-voltáica com camada delgada de Cds |
Country Status (7)
Country | Link |
---|---|
US (1) | US5279678A (pt) |
EP (1) | EP0623246A4 (pt) |
JP (1) | JPH08500209A (pt) |
KR (1) | KR950700611A (pt) |
BR (1) | BR9305730A (pt) |
CA (1) | CA2127886A1 (pt) |
WO (1) | WO1993014523A1 (pt) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5501744A (en) * | 1992-01-13 | 1996-03-26 | Photon Energy, Inc. | Photovoltaic cell having a p-type polycrystalline layer with large crystals |
IL110390A0 (en) * | 1993-07-21 | 1994-10-21 | Photon Energy Inc | Method for making a photovoltaic device |
WO1997021252A1 (fr) * | 1995-12-07 | 1997-06-12 | Japan Energy Corporation | Procede de fabrication d'un dispositif photoelectrique de conversion |
CA2306384A1 (en) * | 1997-10-14 | 1999-04-22 | Patterning Technologies Limited | Method of forming an electronic device |
JP3760997B2 (ja) * | 2003-05-21 | 2006-03-29 | サンケン電気株式会社 | 半導体基体 |
US20070240758A1 (en) * | 2006-04-14 | 2007-10-18 | Thomas Spartz | Double-sided solar module |
MY165986A (en) | 2007-09-25 | 2018-05-21 | First Solar Inc | Photovoltaic devices including heterojunctions |
KR101614554B1 (ko) | 2007-11-02 | 2016-04-21 | 퍼스트 솔라, 인코포레이티드 | 도핑된 반도체 막을 포함하는 광기전 장치 |
EP2104145A1 (fr) * | 2008-03-18 | 2009-09-23 | AGC Flat Glass Europe SA | Substrat de type verrier revêtu de couches minces et procédé de fabrication |
GB0811962D0 (en) * | 2008-06-30 | 2008-07-30 | Imp Innovations Ltd | Improved fabrication method for thin-film field-effect transistors |
IT1396166B1 (it) * | 2009-10-13 | 2012-11-16 | Arendi S P A | Metodo di attivazione di film sottili di cdte per applicazioni in celle solari a film sottili del tipo cdte/cds. |
KR101705705B1 (ko) * | 2010-05-04 | 2017-02-13 | 삼성전자 주식회사 | 유기 태양 전지 |
US20120204939A1 (en) * | 2010-08-23 | 2012-08-16 | Stion Corporation | Structure and Method for High Efficiency CIS/CIGS-based Tandem Photovoltaic Module |
US9559247B2 (en) | 2010-09-22 | 2017-01-31 | First Solar, Inc. | Photovoltaic device containing an N-type dopant source |
CN103348488B (zh) * | 2010-09-22 | 2016-08-03 | 第一太阳能有限公司 | 具有金属硫氧化物窗口层的光伏装置 |
US20120067414A1 (en) * | 2010-09-22 | 2012-03-22 | Chungho Lee | CdZnO OR SnZnO BUFFER LAYER FOR SOLAR CELL |
US20120132283A1 (en) * | 2010-11-29 | 2012-05-31 | EncoreSolar, Inc. | Cadmium telluride solar cell and method of fabricating the same |
US8816190B2 (en) * | 2011-04-18 | 2014-08-26 | First Solar, Inc. | Photovoltaic devices and method of making |
US9496446B2 (en) | 2012-01-31 | 2016-11-15 | First Solar, Inc. | Photovoltaic devices and method of making |
WO2014121187A2 (en) | 2013-02-01 | 2014-08-07 | First Solar, Inc. | Photovoltaic device including a p-n junction and method of manufacturing |
US11876140B2 (en) | 2013-05-02 | 2024-01-16 | First Solar, Inc. | Photovoltaic devices and method of making |
US10062800B2 (en) | 2013-06-07 | 2018-08-28 | First Solar, Inc. | Photovoltaic devices and method of making |
US10529883B2 (en) | 2014-11-03 | 2020-01-07 | First Solar, Inc. | Photovoltaic devices and method of manufacturing |
WO2018078642A1 (en) | 2016-10-24 | 2018-05-03 | Indian Institute Of Technology, Guwahati | A microfluidic electrical energy harvester |
MY196698A (en) * | 2017-12-07 | 2023-04-30 | First Solar Inc | Photovoltaic Devices and Semiconductor Layers With Group V Dopants and Methods for Forming the Same |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4919957B1 (pt) * | 1970-04-24 | 1974-05-21 | ||
US4178395A (en) * | 1977-11-30 | 1979-12-11 | Photon Power, Inc. | Methods for improving solar cell open circuit voltage |
US4207119A (en) * | 1978-06-02 | 1980-06-10 | Eastman Kodak Company | Polycrystalline thin film CdS/CdTe photovoltaic cell |
US4200473A (en) * | 1979-03-12 | 1980-04-29 | Rca Corporation | Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer |
US4251286A (en) * | 1979-09-18 | 1981-02-17 | The University Of Delaware | Thin film photovoltaic cells having blocking layers |
US4315096A (en) * | 1980-07-25 | 1982-02-09 | Eastman Kodak Company | Integrated array of photovoltaic cells having minimized shorting losses |
DE3135933A1 (de) * | 1980-09-26 | 1982-05-19 | Unisearch Ltd., Kensington, New South Wales | Solarzelle und verfahren zu ihrer herstellung |
US4362896A (en) * | 1980-10-28 | 1982-12-07 | Photon Power, Inc. | Polycrystalline photovoltaic cell |
US4529829A (en) * | 1982-11-24 | 1985-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
DE3312053C2 (de) * | 1983-04-02 | 1985-03-28 | Nukem Gmbh, 6450 Hanau | Verfahren zum Verhindern von Kurz- oder Nebenschlüssen in einer großflächigen Dünnschicht-Solarzelle |
US4532372A (en) * | 1983-12-23 | 1985-07-30 | Energy Conversion Devices, Inc. | Barrier layer for photovoltaic devices |
US4598306A (en) * | 1983-07-28 | 1986-07-01 | Energy Conversion Devices, Inc. | Barrier layer for photovoltaic devices |
US4471036A (en) * | 1983-06-29 | 1984-09-11 | The United States Of America As Represented By The United States Department Of Energy | Electrochemical photovoltaic cells and electrodes |
US4568792A (en) * | 1984-02-02 | 1986-02-04 | Sri International | Photovoltaic cell including doped cadmium telluride, a dislocation preventing agent and improved ohmic contacts |
US4611091A (en) * | 1984-12-06 | 1986-09-09 | Atlantic Richfield Company | CuInSe2 thin film solar cell with thin CdS and transparent window layer |
US4709466A (en) * | 1985-04-15 | 1987-12-01 | The University Of Delaware | Process for fabricating thin film photovoltaic solar cells |
US4937651A (en) * | 1985-08-24 | 1990-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device free from the current leakage through a semiconductor layer and method for manufacturing same |
US4650921A (en) * | 1985-10-24 | 1987-03-17 | Atlantic Richfield Company | Thin film cadmium telluride solar cell |
US4677250A (en) * | 1985-10-30 | 1987-06-30 | Astrosystems, Inc. | Fault tolerant thin-film photovoltaic cell |
JPS62132371A (ja) * | 1985-12-05 | 1987-06-15 | Matsushita Electric Ind Co Ltd | 太陽電池モジュール |
US4735909A (en) * | 1986-10-14 | 1988-04-05 | Photon Energy, Inc. | Method for forming a polycrystalline monolayer |
US4735662A (en) * | 1987-01-06 | 1988-04-05 | The Standard Oil Company | Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors |
US5112410A (en) * | 1989-06-27 | 1992-05-12 | The Boeing Company | Cadmium zinc sulfide by solution growth |
US5078804A (en) * | 1989-06-27 | 1992-01-07 | The Boeing Company | I-III-VI2 based solar cell utilizing the structure CuInGaSe2 CdZnS/ZnO |
US5078803A (en) * | 1989-09-22 | 1992-01-07 | Siemens Solar Industries L.P. | Solar cells incorporating transparent electrodes comprising hazy zinc oxide |
-
1992
- 1992-01-13 US US07/819,882 patent/US5279678A/en not_active Expired - Fee Related
-
1993
- 1993-01-13 EP EP93903423A patent/EP0623246A4/en not_active Withdrawn
- 1993-01-13 WO PCT/US1993/000231 patent/WO1993014523A1/en not_active Application Discontinuation
- 1993-01-13 BR BR9305730A patent/BR9305730A/pt not_active Application Discontinuation
- 1993-01-13 CA CA002127886A patent/CA2127886A1/en not_active Abandoned
- 1993-01-13 JP JP5512616A patent/JPH08500209A/ja active Pending
-
1994
- 1994-07-13 KR KR1019940702415A patent/KR950700611A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
CA2127886A1 (en) | 1993-07-22 |
EP0623246A1 (en) | 1994-11-09 |
AU662802B2 (en) | 1995-09-14 |
KR950700611A (ko) | 1995-01-16 |
EP0623246A4 (en) | 1997-03-26 |
WO1993014523A1 (en) | 1993-07-22 |
JPH08500209A (ja) | 1996-01-09 |
US5279678A (en) | 1994-01-18 |
AU3469293A (en) | 1993-08-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EE | Request for examination | ||
FF | Decision: intention to grant | ||
FA11 | Dismissal: dismissal - article 38, par. 2 of industrial property law |