DE2441432B2 - Verfahren zur Herstellung eines VMOS-Transistors - Google Patents

Verfahren zur Herstellung eines VMOS-Transistors

Info

Publication number
DE2441432B2
DE2441432B2 DE2441432A DE2441432A DE2441432B2 DE 2441432 B2 DE2441432 B2 DE 2441432B2 DE 2441432 A DE2441432 A DE 2441432A DE 2441432 A DE2441432 A DE 2441432A DE 2441432 B2 DE2441432 B2 DE 2441432B2
Authority
DE
Germany
Prior art keywords
substrate body
doping
layer
doped
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE2441432A
Other languages
German (de)
English (en)
Other versions
DE2441432A1 (de
Inventor
John Rodgers Palo Alto Calif. Thurman (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
American Microsystems Holding Corp
Original Assignee
American Microsystems Holding Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Microsystems Holding Corp filed Critical American Microsystems Holding Corp
Publication of DE2441432A1 publication Critical patent/DE2441432A1/de
Publication of DE2441432B2 publication Critical patent/DE2441432B2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/837—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising vertical IGFETs
    • H10D84/839—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising vertical IGFETs comprising VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/008—Bi-level fabrication
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
DE2441432A 1973-08-29 1974-08-29 Verfahren zur Herstellung eines VMOS-Transistors Withdrawn DE2441432B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US392668A US3924265A (en) 1973-08-29 1973-08-29 Low capacitance V groove MOS NOR gate and method of manufacture

Publications (2)

Publication Number Publication Date
DE2441432A1 DE2441432A1 (de) 1975-03-27
DE2441432B2 true DE2441432B2 (de) 1981-02-12

Family

ID=23551527

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2441432A Withdrawn DE2441432B2 (de) 1973-08-29 1974-08-29 Verfahren zur Herstellung eines VMOS-Transistors

Country Status (6)

Country Link
US (1) US3924265A (enExample)
JP (1) JPS5419144B2 (enExample)
CA (1) CA1006623A (enExample)
DE (1) DE2441432B2 (enExample)
FR (1) FR2246073B1 (enExample)
GB (1) GB1488151A (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140887A (enExample) * 1974-10-04 1976-04-06 Hitachi Ltd
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element
US4048649A (en) * 1976-02-06 1977-09-13 Transitron Electronic Corporation Superintegrated v-groove isolated bipolar and vmos transistors
US4062699A (en) * 1976-02-20 1977-12-13 Western Digital Corporation Method for fabricating diffusion self-aligned short channel MOS device
DE2619713C2 (de) * 1976-05-04 1984-12-20 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher
US4057844A (en) * 1976-06-24 1977-11-08 American Microsystems, Inc. MOS input protection structure
JPS608628B2 (ja) * 1976-07-05 1985-03-04 ヤマハ株式会社 半導体集積回路装置
US4084175A (en) * 1976-09-30 1978-04-11 Research Corporation Double implanted planar mos device with v-groove and process of manufacture thereof
US4116720A (en) * 1977-12-27 1978-09-26 Burroughs Corporation Method of making a V-MOS field effect transistor for a dynamic memory cell having improved capacitance
US4173765A (en) * 1978-05-26 1979-11-06 Eastman Kodak Company V-MOS imaging array
NL184551C (nl) * 1978-07-24 1989-08-16 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode.
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US4502208A (en) * 1979-01-02 1985-03-05 Texas Instruments Incorporated Method of making high density VMOS electrically-programmable ROM
JPS55138261A (en) * 1979-04-12 1980-10-28 Nec Corp Semiconductor device
US4326332A (en) * 1980-07-28 1982-04-27 International Business Machines Corp. Method of making a high density V-MOS memory array
JPS6252969A (ja) * 1985-08-30 1987-03-07 Nippon Texas Instr Kk 絶縁ゲ−ト型電界効果半導体装置
US4788158A (en) * 1985-09-25 1988-11-29 Texas Instruments Incorporated Method of making vertical inverter
GB8624637D0 (en) * 1986-10-14 1986-11-19 Emi Plc Thorn Electrical device
US5160491A (en) * 1986-10-21 1992-11-03 Texas Instruments Incorporated Method of making a vertical MOS transistor
US5141886A (en) * 1988-04-15 1992-08-25 Texas Instruments Incorporated Vertical floating-gate transistor
US5072266A (en) 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
IT1250233B (it) * 1991-11-29 1995-04-03 St Microelectronics Srl Procedimento per la fabbricazione di circuiti integrati in tecnologia mos.
US5192698A (en) * 1992-03-17 1993-03-09 The United State Of America As Represented By The Secretary Of The Air Force Making staggered complementary heterostructure FET
JPH0878436A (ja) * 1994-09-05 1996-03-22 Mitsubishi Electric Corp 半導体装置
US6140677A (en) * 1998-06-26 2000-10-31 Advanced Micro Devices, Inc. Semiconductor topography for a high speed MOSFET having an ultra narrow gate
US6130454A (en) * 1998-07-07 2000-10-10 Advanced Micro Devices, Inc. Gate conductor formed within a trench bounded by slanted sidewalls
US6114205A (en) * 1998-10-30 2000-09-05 Sony Corporation Epitaxial channel vertical MOS transistor
US8445944B2 (en) 2004-02-04 2013-05-21 Sony Corporation Solid-state image pickup device
JP4341421B2 (ja) * 2004-02-04 2009-10-07 ソニー株式会社 固体撮像装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3355598A (en) * 1964-11-25 1967-11-28 Rca Corp Integrated logic arrays employing insulated-gate field-effect devices having a common source region and shared gates
US3414740A (en) * 1965-09-08 1968-12-03 Ibm Integrated insulated gate field effect logic circuitry
US3412297A (en) * 1965-12-16 1968-11-19 United Aircraft Corp Mos field-effect transistor with a onemicron vertical channel
US3518509A (en) * 1966-06-17 1970-06-30 Int Standard Electric Corp Complementary field-effect transistors on common substrate by multiple epitaxy techniques
US3764396A (en) * 1969-09-18 1973-10-09 Kogyo Gijutsuin Transistors and production thereof
NL164424C (nl) * 1970-06-04 1980-12-15 Philips Nv Werkwijze voor het vervaardigen van een veldeffect- transistor met een geisoleerde stuurelektrode, waarbij een door een tegen oxydatie maskerende laag vrijgelaten deel van het oppervlak van een siliciumlichaam aan een oxydatiebehandeling wordt onderworpen ter verkrijging van een althans gedeeltelijk in het siliciumlichaam verzonken siliciumoxydelaag.
US3761785A (en) * 1971-04-23 1973-09-25 Bell Telephone Labor Inc Methods for making transistor structures
US3751722A (en) * 1971-04-30 1973-08-07 Standard Microsyst Smc Mos integrated circuit with substrate containing selectively formed resistivity regions
US3823352A (en) * 1972-12-13 1974-07-09 Bell Telephone Labor Inc Field effect transistor structures and methods

Also Published As

Publication number Publication date
CA1006623A (en) 1977-03-08
US3924265A (en) 1975-12-02
FR2246073B1 (enExample) 1978-02-17
GB1488151A (en) 1977-10-05
DE2441432A1 (de) 1975-03-27
JPS5082981A (enExample) 1975-07-04
FR2246073A1 (enExample) 1975-04-25
JPS5419144B2 (enExample) 1979-07-12

Similar Documents

Publication Publication Date Title
DE2441432B2 (de) Verfahren zur Herstellung eines VMOS-Transistors
DE69032735T2 (de) Verfahren zum Herstellen von Hochspannungs- und Niederspannungs-CMOS-Transistoren in einem einzigen integrierten Schaltungs-Chip
DE3105118C2 (de) Verfahren zur Herstellung einer integrierten Schaltung mit komplementären bipolaren Transistoren und komplementären Isolierschicht-Gate-Feldeffekttransistoren auf einem gemeinsamen Substrat
DE69030415T2 (de) Verfahren zur Herstellung eines DMOS Transistors
DE3881799T2 (de) Verfahren zur Herstellung von CMOS-Bauelementen.
DE1764464C3 (de) Verfahren zur Herstellung eines lateralen Transistors
DE3545040C2 (de) Verfahren zur Herstellung einer vergrabenen Schicht und einer Kollektorzone in einer monolithischen Halbleitervorrichtung
DE2734694A1 (de) Isolierschicht-feldeffekttransistor mit kleiner kanallaenge und verfahren zu seiner herstellung
DE2545892A1 (de) Kombiniertes verfahren zur herstellung oxyd-isolierter vertikaler bipolartransistoren und komplementaerer oxyd-isolierter lateraler bipolartransistoren
DE3688057T2 (de) Halbleitervorrichtung und Methode zur Herstellung.
DE2214935A1 (de) Integrierte Halbleiterschaltung
DE2512373B2 (de) Isolierschicht-Feldeffekttransistor mit tiefer Verarmungszone
DE102018216855A1 (de) Siliziumcarbid-Halbleitervorrichtung und Verfahren zum Herstellen einer Siliziumcarbid-Halbleitervorrichtung
DE2352762A1 (de) Verfahren zur herstellung einer halbleiteranordnung mit komplementaeren feldeffekt-transistoren
DE10000754A1 (de) Halbleiterbauelement und Verfahren zu seiner Herstellung
DE2655400A1 (de) Halbleitervorrichtung und verfahren zu ihrer herstellung
EP0006510B1 (de) Verfahren zum Erzeugen aneinander grenzender, unterschiedlich dotierter Siliciumbereiche
DE3737790C2 (enExample)
DE3636249A1 (de) Verfahren zum herstellen eines mos-feldeffekttransistors und danach hergestellter transistor
DE2739586C2 (de) Statischer Inverter mit Isolierschicht-Feldeffekttransistoren und Verfahren zur Herstellung
DE2718449C2 (enExample)
DE2749607B2 (de) Halbleiteranordnung und Verfahren zu deren Herstellung
DE2655917A1 (de) Integrierte schaltung
DE3781573T2 (de) Selbstausrichtender kontakt auf einer diffundierten zone des p-typs.
DE4240205C2 (de) Verfahren zum Herstellen einer Halbleitervorrichtung, insb. eines Bipolartransistors

Legal Events

Date Code Title Description
8263 Opposition against grant of a patent
8239 Disposal/non-payment of the annual fee