DE2437430A1 - Verfahren zur herstellung monokristalliner niedrigtemperatur-epitaxialbereiche durch umwandlung aus einer amorphen schicht - Google Patents
Verfahren zur herstellung monokristalliner niedrigtemperatur-epitaxialbereiche durch umwandlung aus einer amorphen schichtInfo
- Publication number
- DE2437430A1 DE2437430A1 DE2437430A DE2437430A DE2437430A1 DE 2437430 A1 DE2437430 A1 DE 2437430A1 DE 2437430 A DE2437430 A DE 2437430A DE 2437430 A DE2437430 A DE 2437430A DE 2437430 A1 DE2437430 A1 DE 2437430A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- polycrystalline
- monocrystalline
- carrier substrate
- polycrystalline amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000006243 chemical reaction Methods 0.000 title description 10
- 239000000463 material Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 34
- 238000005468 ion implantation Methods 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000006378 damage Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000007943 implant Substances 0.000 claims 1
- -1 silicon ions Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 57
- 239000004065 semiconductor Substances 0.000 description 15
- 238000000137 annealing Methods 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/003—Anneal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Thermal Sciences (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US385195A US3900345A (en) | 1973-08-02 | 1973-08-02 | Thin low temperature epi regions by conversion of an amorphous layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2437430A1 true DE2437430A1 (de) | 1975-02-20 |
Family
ID=23520419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2437430A Pending DE2437430A1 (de) | 1973-08-02 | 1974-08-02 | Verfahren zur herstellung monokristalliner niedrigtemperatur-epitaxialbereiche durch umwandlung aus einer amorphen schicht |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3900345A (enExample) |
| JP (1) | JPS5038838A (enExample) |
| DE (1) | DE2437430A1 (enExample) |
| FR (1) | FR2257334B1 (enExample) |
| GB (1) | GB1423085A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3003285A1 (de) * | 1980-01-30 | 1981-08-06 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen niederohmiger, einkristalliner metall- oder legierungsschichten auf substraten |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6041458B2 (ja) * | 1975-04-21 | 1985-09-17 | ソニー株式会社 | 半導体装置の製造方法 |
| JPS51123562A (en) * | 1975-04-21 | 1976-10-28 | Sony Corp | Production method of semiconductor device |
| JPS52112890A (en) * | 1976-03-15 | 1977-09-21 | Tokyo Seimitsu Co Ltd | Measuring method and controlling method for use in twoohead plane surface grinding machine |
| DE2711543A1 (de) * | 1976-05-11 | 1977-11-24 | Ibm | Verfahren zum herstellen einer einkristallinen silizium-epitaxieschicht auf einem siliziumsubstrat |
| DE2627855A1 (de) * | 1976-06-22 | 1977-12-29 | Siemens Ag | Halbleiterbauelement mit wenigstens zwei, einen pn-uebergang bildenden zonen unterschiedlichen leitungstyps sowie verfahren zu dessen herstellung |
| JPS5344170A (en) * | 1976-10-05 | 1978-04-20 | Fujitsu Ltd | Production of semiconductor device |
| US4098618A (en) * | 1977-06-03 | 1978-07-04 | International Business Machines Corporation | Method of manufacturing semiconductor devices in which oxide regions are formed by an oxidation mask disposed directly on a substrate damaged by ion implantation |
| JPS5466767A (en) * | 1977-11-08 | 1979-05-29 | Fujitsu Ltd | Manufacture for sos construction |
| JPS54102685A (en) * | 1978-01-30 | 1979-08-13 | Waida Seisakushiyo Kk | Duplex head surface grinder |
| US4240843A (en) * | 1978-05-23 | 1980-12-23 | Western Electric Company, Inc. | Forming self-guarded p-n junctions by epitaxial regrowth of amorphous regions using selective radiation annealing |
| US4177084A (en) * | 1978-06-09 | 1979-12-04 | Hewlett-Packard Company | Method for producing a low defect layer of silicon-on-sapphire wafer |
| NL7810549A (nl) * | 1978-10-23 | 1980-04-25 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleider- inrichting. |
| JPS5577146A (en) * | 1978-12-07 | 1980-06-10 | Nec Corp | Production of semiconductor device |
| US4358326A (en) * | 1980-11-03 | 1982-11-09 | International Business Machines Corporation | Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing |
| JPS57159017A (en) * | 1981-03-27 | 1982-10-01 | Toshiba Corp | Manufacture of semiconductor single crystal film |
| JPS5837913A (ja) * | 1981-08-28 | 1983-03-05 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| GB2131407B (en) * | 1982-11-12 | 1987-02-04 | Rca Corp | Method of formation of silicon dioxide layer |
| JPS6116532A (ja) * | 1984-07-03 | 1986-01-24 | Matsushita Electric Ind Co Ltd | 半導体基板およびその製造方法 |
| US4597160A (en) * | 1985-08-09 | 1986-07-01 | Rca Corporation | Method of fabricating a polysilicon transistor with a high carrier mobility |
| IT1209682B (it) * | 1985-12-23 | 1989-08-30 | Sgs Microelettronica Spa | Processo per la fabbricazione mediante ricristallizzazione epitassiale di transistori ad effetto di campo a gate isolato con giunzioni a profondita' minima. |
| US5342792A (en) * | 1986-03-07 | 1994-08-30 | Canon Kabushiki Kaisha | Method of manufacturing semiconductor memory element |
| JPS6310573A (ja) * | 1986-07-02 | 1988-01-18 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| US5081062A (en) * | 1987-08-27 | 1992-01-14 | Prahalad Vasudev | Monolithic integration of silicon on insulator and gallium arsenide semiconductor technologies |
| US5290712A (en) * | 1989-03-31 | 1994-03-01 | Canon Kabushiki Kaisha | Process for forming crystalline semiconductor film |
| DE69116202T2 (de) * | 1990-04-10 | 1996-06-20 | Canon Kk | Verfahren zur Herstellung einer Halbleiterdünnschicht |
| JPH0492413A (ja) * | 1990-08-08 | 1992-03-25 | Canon Inc | 結晶薄膜の成長方法 |
| US5266504A (en) * | 1992-03-26 | 1993-11-30 | International Business Machines Corporation | Low temperature emitter process for high performance bipolar devices |
| JP3240719B2 (ja) * | 1992-12-10 | 2001-12-25 | ソニー株式会社 | 半導体薄膜結晶の成長方法 |
| US6383899B1 (en) * | 1996-04-05 | 2002-05-07 | Sharp Laboratories Of America, Inc. | Method of forming polycrystalline semiconductor film from amorphous deposit by modulating crystallization with a combination of pre-annealing and ion implantation |
| KR100282709B1 (ko) * | 1998-08-28 | 2001-03-02 | 윤종용 | 반구형 실리콘을 이용한 캐패시터의 제조 방법 |
| US7285473B2 (en) * | 2005-01-07 | 2007-10-23 | International Business Machines Corporation | Method for fabricating low-defect-density changed orientation Si |
| US7060585B1 (en) * | 2005-02-16 | 2006-06-13 | International Business Machines Corporation | Hybrid orientation substrates by in-place bonding and amorphization/templated recrystallization |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL265823A (enExample) * | 1960-06-13 | |||
| US3370980A (en) * | 1963-08-19 | 1968-02-27 | Litton Systems Inc | Method for orienting single crystal films on polycrystalline substrates |
| US3519901A (en) * | 1968-01-29 | 1970-07-07 | Texas Instruments Inc | Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation |
| GB1269359A (en) * | 1968-08-22 | 1972-04-06 | Atomic Energy Authority Uk | Improvements in or relating to semiconductors and methods of doping semiconductors |
| GB1250377A (enExample) * | 1968-08-24 | 1971-10-20 |
-
1973
- 1973-08-02 US US385195A patent/US3900345A/en not_active Expired - Lifetime
-
1974
- 1974-07-16 GB GB3148974A patent/GB1423085A/en not_active Expired
- 1974-07-31 JP JP49087128A patent/JPS5038838A/ja active Pending
- 1974-08-01 FR FR7426806A patent/FR2257334B1/fr not_active Expired
- 1974-08-02 DE DE2437430A patent/DE2437430A1/de active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3003285A1 (de) * | 1980-01-30 | 1981-08-06 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen niederohmiger, einkristalliner metall- oder legierungsschichten auf substraten |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5038838A (enExample) | 1975-04-10 |
| FR2257334A1 (enExample) | 1975-08-08 |
| US3900345A (en) | 1975-08-19 |
| GB1423085A (en) | 1976-01-28 |
| FR2257334B1 (enExample) | 1976-10-22 |
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