JPS5466767A - Manufacture for sos construction - Google Patents
Manufacture for sos constructionInfo
- Publication number
- JPS5466767A JPS5466767A JP13369377A JP13369377A JPS5466767A JP S5466767 A JPS5466767 A JP S5466767A JP 13369377 A JP13369377 A JP 13369377A JP 13369377 A JP13369377 A JP 13369377A JP S5466767 A JPS5466767 A JP S5466767A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- substrate
- layer
- destruction
- compressive stress
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To increase the mobility of epitaxial layer, by canceling the compressive stress on the substrate boundary through the ion injection in the substrate via the Si epitaxial layer on the insulator substrate.
CONSTITUTION: The Si epitaxial layer of (001) plane is formed on the smooth plane of the sapphire substrate cut out toward (1012) with thermal separation of SiH4 as specified. When Ar ions are injected almost vertically from the epitaxial layer, the most of it reaches the sapphire substrate with the channel effect and the destruction layer is formed beneath the substrate boundary. Transposition is caused to the destruction layer with Ar ion injection, and the compressive stress between the epitaxial layer and the substrate is cancelled with the sliding. With this method, the Si epitaxial layer having greater mobility layer is obtained. The destruction of the epitaxial layer can completely revamped with slight annealing.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13369377A JPS5466767A (en) | 1977-11-08 | 1977-11-08 | Manufacture for sos construction |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13369377A JPS5466767A (en) | 1977-11-08 | 1977-11-08 | Manufacture for sos construction |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5466767A true JPS5466767A (en) | 1979-05-29 |
JPS626642B2 JPS626642B2 (en) | 1987-02-12 |
Family
ID=15110659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13369377A Granted JPS5466767A (en) | 1977-11-08 | 1977-11-08 | Manufacture for sos construction |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5466767A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6376872A (en) * | 1986-09-18 | 1988-04-07 | Agency Of Ind Science & Technol | Method for relieving internal stress of film |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5038838A (en) * | 1973-08-02 | 1975-04-10 | ||
JPS5056184A (en) * | 1973-09-03 | 1975-05-16 | ||
JPS518869A (en) * | 1974-07-09 | 1976-01-24 | Mitsubishi Electric Corp | HANDOTAIEPITAKI SHARUEHANO SEIZOHOHO |
-
1977
- 1977-11-08 JP JP13369377A patent/JPS5466767A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5038838A (en) * | 1973-08-02 | 1975-04-10 | ||
JPS5056184A (en) * | 1973-09-03 | 1975-05-16 | ||
JPS518869A (en) * | 1974-07-09 | 1976-01-24 | Mitsubishi Electric Corp | HANDOTAIEPITAKI SHARUEHANO SEIZOHOHO |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6376872A (en) * | 1986-09-18 | 1988-04-07 | Agency Of Ind Science & Technol | Method for relieving internal stress of film |
JPH049866B2 (en) * | 1986-09-18 | 1992-02-21 |
Also Published As
Publication number | Publication date |
---|---|
JPS626642B2 (en) | 1987-02-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6442176A (en) | Semiconductor device and manufacture thereof | |
JPS54881A (en) | Semiconductor device | |
JPS54589A (en) | Burying method of insulator | |
JPS5466767A (en) | Manufacture for sos construction | |
JPS56155531A (en) | Manufacture of semiconductor device | |
JPS5418684A (en) | Manufacture of semiconductor device | |
JPS574169A (en) | Gaas field-effect transistor | |
JPS542070A (en) | Manufacture for semiconductor element | |
JPS5458381A (en) | Manufacture for semiconductor device | |
JPS56114381A (en) | Semiconductor device | |
JPS53130981A (en) | Manufacture for semiconductor device | |
JPS5772386A (en) | Junction type field-effect semiconductor device | |
JPS57112075A (en) | Insulating gate fet | |
JPS54124687A (en) | Production of semiconductor device | |
JPS5593269A (en) | Manufacture of semiconductor device | |
JPS5472668A (en) | Manufacture for semiconductor device | |
JPS56146276A (en) | Insulating gate type field-effect transistor | |
JPS5357979A (en) | Semiconductor device and its production | |
JPS5339088A (en) | Insulated gate type field effect semiconductor device | |
JPS5388584A (en) | Production of sio2 layer for interelement isolation | |
JPS5739579A (en) | Mos semiconductor device and manufacture thereof | |
JPS57134961A (en) | Complementary type mis transistor device | |
JPS5676042A (en) | Field effect transistor for ion sensor | |
JPS5752167A (en) | Insulated gate type field effect transistor and manufacture thereof | |
JPS5491185A (en) | Semiconductor divece |