JPS5466767A - Manufacture for sos construction - Google Patents

Manufacture for sos construction

Info

Publication number
JPS5466767A
JPS5466767A JP13369377A JP13369377A JPS5466767A JP S5466767 A JPS5466767 A JP S5466767A JP 13369377 A JP13369377 A JP 13369377A JP 13369377 A JP13369377 A JP 13369377A JP S5466767 A JPS5466767 A JP S5466767A
Authority
JP
Japan
Prior art keywords
epitaxial layer
substrate
layer
destruction
compressive stress
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13369377A
Other languages
Japanese (ja)
Other versions
JPS626642B2 (en
Inventor
Nobuo Sasaki
Motoo Nakano
Yasuo Kobayashi
Takashi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13369377A priority Critical patent/JPS5466767A/en
Publication of JPS5466767A publication Critical patent/JPS5466767A/en
Publication of JPS626642B2 publication Critical patent/JPS626642B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To increase the mobility of epitaxial layer, by canceling the compressive stress on the substrate boundary through the ion injection in the substrate via the Si epitaxial layer on the insulator substrate.
CONSTITUTION: The Si epitaxial layer of (001) plane is formed on the smooth plane of the sapphire substrate cut out toward (1012) with thermal separation of SiH4 as specified. When Ar ions are injected almost vertically from the epitaxial layer, the most of it reaches the sapphire substrate with the channel effect and the destruction layer is formed beneath the substrate boundary. Transposition is caused to the destruction layer with Ar ion injection, and the compressive stress between the epitaxial layer and the substrate is cancelled with the sliding. With this method, the Si epitaxial layer having greater mobility layer is obtained. The destruction of the epitaxial layer can completely revamped with slight annealing.
COPYRIGHT: (C)1979,JPO&Japio
JP13369377A 1977-11-08 1977-11-08 Manufacture for sos construction Granted JPS5466767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13369377A JPS5466767A (en) 1977-11-08 1977-11-08 Manufacture for sos construction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13369377A JPS5466767A (en) 1977-11-08 1977-11-08 Manufacture for sos construction

Publications (2)

Publication Number Publication Date
JPS5466767A true JPS5466767A (en) 1979-05-29
JPS626642B2 JPS626642B2 (en) 1987-02-12

Family

ID=15110659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13369377A Granted JPS5466767A (en) 1977-11-08 1977-11-08 Manufacture for sos construction

Country Status (1)

Country Link
JP (1) JPS5466767A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376872A (en) * 1986-09-18 1988-04-07 Agency Of Ind Science & Technol Method for relieving internal stress of film

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038838A (en) * 1973-08-02 1975-04-10
JPS5056184A (en) * 1973-09-03 1975-05-16
JPS518869A (en) * 1974-07-09 1976-01-24 Mitsubishi Electric Corp HANDOTAIEPITAKI SHARUEHANO SEIZOHOHO

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038838A (en) * 1973-08-02 1975-04-10
JPS5056184A (en) * 1973-09-03 1975-05-16
JPS518869A (en) * 1974-07-09 1976-01-24 Mitsubishi Electric Corp HANDOTAIEPITAKI SHARUEHANO SEIZOHOHO

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376872A (en) * 1986-09-18 1988-04-07 Agency Of Ind Science & Technol Method for relieving internal stress of film
JPH049866B2 (en) * 1986-09-18 1992-02-21

Also Published As

Publication number Publication date
JPS626642B2 (en) 1987-02-12

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