JPS5676042A - Field effect transistor for ion sensor - Google Patents
Field effect transistor for ion sensorInfo
- Publication number
- JPS5676042A JPS5676042A JP15387579A JP15387579A JPS5676042A JP S5676042 A JPS5676042 A JP S5676042A JP 15387579 A JP15387579 A JP 15387579A JP 15387579 A JP15387579 A JP 15387579A JP S5676042 A JPS5676042 A JP S5676042A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- sio
- polysilicon layer
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
Abstract
PURPOSE: To concentrate the a sensor parts to the point of a substrate and to improve the yield of products by a method wherein insulation between the sensor part and an electrolyte is performed by using a semiconductor insulating film and an intermediate wiring part is performed by using a polysilicon for which impurity is doped.
CONSTITUTION: A source area 2 and a drain area 5 are formed at the point part of a silicon substrate 1 by means of diffusion, and an SiO2 film is formed on the whole surface of the substrate 1. Next thereto, an SiO2 film on the required surface of both areas 2 and 5 is removed and thereafter, a polysilicon layer 9 of a stripe or band type is formed toward the rear end of the substrate 1. On this polysilicon layer 9, an SiO2 film is formed and further, an SiN film is formed. Next thereto, the SiN film and SiO2 film of the required part at the surface rear end of the substrate 1 are removed to expose the polysilicon layer and a source electrode S and a drain electrode D are formed, thus, the field effect transistor for ion sensor being constituted. With this, the substrate 1 can be made into a small size and an insulating processing at a wiring part is easily performed.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15387579A JPS5676042A (en) | 1979-11-28 | 1979-11-28 | Field effect transistor for ion sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15387579A JPS5676042A (en) | 1979-11-28 | 1979-11-28 | Field effect transistor for ion sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5676042A true JPS5676042A (en) | 1981-06-23 |
| JPS6134617B2 JPS6134617B2 (en) | 1986-08-08 |
Family
ID=15572014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15387579A Granted JPS5676042A (en) | 1979-11-28 | 1979-11-28 | Field effect transistor for ion sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5676042A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62102160U (en) * | 1985-12-18 | 1987-06-29 | ||
| CN102290349A (en) * | 2010-06-21 | 2011-12-21 | 无锡华润上华半导体有限公司 | Semiconductor structure and forming method thereof |
-
1979
- 1979-11-28 JP JP15387579A patent/JPS5676042A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62102160U (en) * | 1985-12-18 | 1987-06-29 | ||
| CN102290349A (en) * | 2010-06-21 | 2011-12-21 | 无锡华润上华半导体有限公司 | Semiconductor structure and forming method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6134617B2 (en) | 1986-08-08 |
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