JPS5388584A - Production of sio2 layer for interelement isolation - Google Patents
Production of sio2 layer for interelement isolationInfo
- Publication number
- JPS5388584A JPS5388584A JP288277A JP288277A JPS5388584A JP S5388584 A JPS5388584 A JP S5388584A JP 288277 A JP288277 A JP 288277A JP 288277 A JP288277 A JP 288277A JP S5388584 A JPS5388584 A JP S5388584A
- Authority
- JP
- Japan
- Prior art keywords
- production
- sio2 layer
- interelement isolation
- interelement
- isolation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To reduce the spacing of interelement isolating regions, increase the density of integration and reduce parasitic capacity by striking a selectively exposed Si substrate in an atmosphere containing halogen or ions thereby opening deep grooves, and burying the grooves with SiO2.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP288277A JPS5388584A (en) | 1977-01-17 | 1977-01-17 | Production of sio2 layer for interelement isolation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP288277A JPS5388584A (en) | 1977-01-17 | 1977-01-17 | Production of sio2 layer for interelement isolation |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19941385A Division JPS61166042A (en) | 1985-09-11 | 1985-09-11 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5388584A true JPS5388584A (en) | 1978-08-04 |
Family
ID=11541717
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP288277A Pending JPS5388584A (en) | 1977-01-17 | 1977-01-17 | Production of sio2 layer for interelement isolation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5388584A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58127344A (en) * | 1982-01-26 | 1983-07-29 | Seiko Epson Corp | Preparation of semiconductor device |
JPH021916A (en) * | 1988-06-10 | 1990-01-08 | Mitsubishi Electric Corp | Formation of isolated oxide film |
US4931409A (en) * | 1988-01-30 | 1990-06-05 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device having trench isolation |
-
1977
- 1977-01-17 JP JP288277A patent/JPS5388584A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58127344A (en) * | 1982-01-26 | 1983-07-29 | Seiko Epson Corp | Preparation of semiconductor device |
US4931409A (en) * | 1988-01-30 | 1990-06-05 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device having trench isolation |
JPH021916A (en) * | 1988-06-10 | 1990-01-08 | Mitsubishi Electric Corp | Formation of isolated oxide film |
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