JPS5388584A - Production of sio2 layer for interelement isolation - Google Patents

Production of sio2 layer for interelement isolation

Info

Publication number
JPS5388584A
JPS5388584A JP288277A JP288277A JPS5388584A JP S5388584 A JPS5388584 A JP S5388584A JP 288277 A JP288277 A JP 288277A JP 288277 A JP288277 A JP 288277A JP S5388584 A JPS5388584 A JP S5388584A
Authority
JP
Japan
Prior art keywords
production
sio2 layer
interelement isolation
interelement
isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP288277A
Other languages
Japanese (ja)
Inventor
Kayao Takemoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP288277A priority Critical patent/JPS5388584A/en
Publication of JPS5388584A publication Critical patent/JPS5388584A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the spacing of interelement isolating regions, increase the density of integration and reduce parasitic capacity by striking a selectively exposed Si substrate in an atmosphere containing halogen or ions thereby opening deep grooves, and burying the grooves with SiO2.
COPYRIGHT: (C)1978,JPO&Japio
JP288277A 1977-01-17 1977-01-17 Production of sio2 layer for interelement isolation Pending JPS5388584A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP288277A JPS5388584A (en) 1977-01-17 1977-01-17 Production of sio2 layer for interelement isolation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP288277A JPS5388584A (en) 1977-01-17 1977-01-17 Production of sio2 layer for interelement isolation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP19941385A Division JPS61166042A (en) 1985-09-11 1985-09-11 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5388584A true JPS5388584A (en) 1978-08-04

Family

ID=11541717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP288277A Pending JPS5388584A (en) 1977-01-17 1977-01-17 Production of sio2 layer for interelement isolation

Country Status (1)

Country Link
JP (1) JPS5388584A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127344A (en) * 1982-01-26 1983-07-29 Seiko Epson Corp Preparation of semiconductor device
JPH021916A (en) * 1988-06-10 1990-01-08 Mitsubishi Electric Corp Formation of isolated oxide film
US4931409A (en) * 1988-01-30 1990-06-05 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device having trench isolation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127344A (en) * 1982-01-26 1983-07-29 Seiko Epson Corp Preparation of semiconductor device
US4931409A (en) * 1988-01-30 1990-06-05 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device having trench isolation
JPH021916A (en) * 1988-06-10 1990-01-08 Mitsubishi Electric Corp Formation of isolated oxide film

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