DE2334658C3 - Verfahren zum Zerteilen von Halbleiterscheiben - Google Patents

Verfahren zum Zerteilen von Halbleiterscheiben

Info

Publication number
DE2334658C3
DE2334658C3 DE19732334658 DE2334658A DE2334658C3 DE 2334658 C3 DE2334658 C3 DE 2334658C3 DE 19732334658 DE19732334658 DE 19732334658 DE 2334658 A DE2334658 A DE 2334658A DE 2334658 C3 DE2334658 C3 DE 2334658C3
Authority
DE
Germany
Prior art keywords
semiconductor wafer
gas
plasma
chamber
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19732334658
Other languages
German (de)
English (en)
Other versions
DE2334658A1 (de
DE2334658B2 (de
Inventor
Haruhiko Amagasaki Hyogo Abe (Japan)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE2334658A1 publication Critical patent/DE2334658A1/de
Publication of DE2334658B2 publication Critical patent/DE2334658B2/de
Application granted granted Critical
Publication of DE2334658C3 publication Critical patent/DE2334658C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Dicing (AREA)
DE19732334658 1972-07-08 1973-07-07 Verfahren zum Zerteilen von Halbleiterscheiben Expired DE2334658C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6839872A JPS523775B2 (enExample) 1972-07-08 1972-07-08

Publications (3)

Publication Number Publication Date
DE2334658A1 DE2334658A1 (de) 1974-01-24
DE2334658B2 DE2334658B2 (de) 1978-03-30
DE2334658C3 true DE2334658C3 (de) 1978-11-23

Family

ID=13372538

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19732334658 Expired DE2334658C3 (de) 1972-07-08 1973-07-07 Verfahren zum Zerteilen von Halbleiterscheiben

Country Status (4)

Country Link
JP (1) JPS523775B2 (enExample)
DE (1) DE2334658C3 (enExample)
FR (1) FR2192378B1 (enExample)
GB (1) GB1398940A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0644592B2 (ja) * 1984-10-25 1994-06-08 日本電気株式会社 半導体装置の製造方法
US6642127B2 (en) * 2001-10-19 2003-11-04 Applied Materials, Inc. Method for dicing a semiconductor wafer
CN103341692A (zh) 2013-06-26 2013-10-09 京东方科技集团股份有限公司 切割不规则图形基板的方法和显示装置
JP7102065B2 (ja) * 2018-06-20 2022-07-19 株式会社ディスコ チップの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process

Also Published As

Publication number Publication date
JPS523775B2 (enExample) 1977-01-29
FR2192378B1 (enExample) 1977-09-02
FR2192378A1 (enExample) 1974-02-08
DE2334658A1 (de) 1974-01-24
DE2334658B2 (de) 1978-03-30
GB1398940A (en) 1975-06-25
JPS4928270A (enExample) 1974-03-13

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)