GB1398940A - Method of dividing semiconductor wafers - Google Patents

Method of dividing semiconductor wafers

Info

Publication number
GB1398940A
GB1398940A GB3238173A GB3238173A GB1398940A GB 1398940 A GB1398940 A GB 1398940A GB 3238173 A GB3238173 A GB 3238173A GB 3238173 A GB3238173 A GB 3238173A GB 1398940 A GB1398940 A GB 1398940A
Authority
GB
United Kingdom
Prior art keywords
plasma
gas
wafer
freon
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3238173A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB1398940A publication Critical patent/GB1398940A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Drying Of Semiconductors (AREA)
  • Dicing (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
GB3238173A 1972-07-08 1973-07-06 Method of dividing semiconductor wafers Expired GB1398940A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6839872A JPS523775B2 (enExample) 1972-07-08 1972-07-08

Publications (1)

Publication Number Publication Date
GB1398940A true GB1398940A (en) 1975-06-25

Family

ID=13372538

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3238173A Expired GB1398940A (en) 1972-07-08 1973-07-06 Method of dividing semiconductor wafers

Country Status (4)

Country Link
JP (1) JPS523775B2 (enExample)
DE (1) DE2334658C3 (enExample)
FR (1) FR2192378B1 (enExample)
GB (1) GB1398940A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003036712A1 (en) * 2001-10-19 2003-05-01 Applied Materials, Inc. Method and apparatus for dicing a semiconductor wafer
CN103341692A (zh) * 2013-06-26 2013-10-09 京东方科技集团股份有限公司 切割不规则图形基板的方法和显示装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0644592B2 (ja) * 1984-10-25 1994-06-08 日本電気株式会社 半導体装置の製造方法
JP7102065B2 (ja) * 2018-06-20 2022-07-19 株式会社ディスコ チップの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003036712A1 (en) * 2001-10-19 2003-05-01 Applied Materials, Inc. Method and apparatus for dicing a semiconductor wafer
CN103341692A (zh) * 2013-06-26 2013-10-09 京东方科技集团股份有限公司 切割不规则图形基板的方法和显示装置
US9416041B2 (en) 2013-06-26 2016-08-16 Beijing Boe Display Technology Co., Ltd. Method for cutting substrate of irregular pattern and display device
US10414683B2 (en) 2013-06-26 2019-09-17 Boe Technology Group Co., Ltd. Method for cutting substrate of irregular pattern and display device

Also Published As

Publication number Publication date
DE2334658C3 (de) 1978-11-23
FR2192378B1 (enExample) 1977-09-02
JPS523775B2 (enExample) 1977-01-29
DE2334658B2 (de) 1978-03-30
JPS4928270A (enExample) 1974-03-13
DE2334658A1 (de) 1974-01-24
FR2192378A1 (enExample) 1974-02-08

Similar Documents

Publication Publication Date Title
GB1398940A (en) Method of dividing semiconductor wafers
GB1525850A (en) Method and apparatus for chemically treating a single side of a workpiece
GB1096484A (en) Improvements in or relating to semiconductor circuits
KR930014829A (ko) 에칭방법
JPS5324277A (en) Semiconductor devic e and its production
JPS57174466A (en) Dry etching method
JPS57131372A (en) Plasma etching device
JPS5515290A (en) Manufacturing method of semiconductor device
JPS5278382A (en) Semiconductor device
FR2231111A1 (en) Bipolar transistor for large scale integration - using same window with added masks for triple diffusion
JPS5260571A (en) Semiconductor device
JPS5618426A (en) Manufacture of semiconductor device
JPS5298475A (en) Plasma treating apparatus
JPS5258483A (en) Junction type field effect semiconductor device and its production
JPS51136289A (en) Semi-conductor producing
JPS6482533A (en) Dry etching
JPS5591138A (en) Die forming of semiconductor device
JPS5330284A (en) Production of substrate for semiconductor integrated circuits
JPS61256725A (ja) ドライエツチング方法
JPS6445168A (en) Manufacture of high breakdown voltage semiconductor element
JPS5361974A (en) Production of semiconductor device
JPS5562171A (en) Reactive sputter-etching method
JPS649619A (en) Manufacture of semiconductor device
GB1071159A (en) A method of oxidizing the surface of silicon semiconductor bodies
JPS5743412A (en) Reduced pressure cvd method

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19930705