FR2231111A1 - Bipolar transistor for large scale integration - using same window with added masks for triple diffusion - Google Patents

Bipolar transistor for large scale integration - using same window with added masks for triple diffusion

Info

Publication number
FR2231111A1
FR2231111A1 FR7418075A FR7418075A FR2231111A1 FR 2231111 A1 FR2231111 A1 FR 2231111A1 FR 7418075 A FR7418075 A FR 7418075A FR 7418075 A FR7418075 A FR 7418075A FR 2231111 A1 FR2231111 A1 FR 2231111A1
Authority
FR
France
Prior art keywords
bipolar transistor
window
diffusion
large scale
scale integration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7418075A
Other languages
French (fr)
Other versions
FR2231111B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Space and Mission Systems Corp
Original Assignee
TRW Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TRW Inc filed Critical TRW Inc
Publication of FR2231111A1 publication Critical patent/FR2231111A1/en
Application granted granted Critical
Publication of FR2231111B1 publication Critical patent/FR2231111B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/10—ROM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

To produce a bipolar transistor for integrated circuits, a silicon dioxide layer on a semiconductor substrate is etched to form an elongated window, using the layer as a permanent mask. This represents the outer boundaries of a diffusion transistor. After a first doping operation through the window, the window is successfully masked in length, leaving the same width, to produce a second and third diffusion of impurity atoms. This system avoids the difficulties with the positional tolerance of subsequent photolithographic processes. It produces triple diffused transistors of high packing density and low dissipated power.
FR7418075A 1973-05-25 1974-05-24 Bipolar transistor for large scale integration - using same window with added masks for triple diffusion Granted FR2231111A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36414873A 1973-05-25 1973-05-25

Publications (2)

Publication Number Publication Date
FR2231111A1 true FR2231111A1 (en) 1974-12-20
FR2231111B1 FR2231111B1 (en) 1978-03-31

Family

ID=23433234

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7418075A Granted FR2231111A1 (en) 1973-05-25 1974-05-24 Bipolar transistor for large scale integration - using same window with added masks for triple diffusion

Country Status (5)

Country Link
JP (1) JPS5517495B2 (en)
CA (1) CA1005171A (en)
DE (1) DE2419817A1 (en)
FR (1) FR2231111A1 (en)
NL (1) NL7404614A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5267979A (en) * 1975-12-04 1977-06-06 Mitsubishi Electric Corp Manufacture of semiconductor
JPS5269276A (en) * 1975-12-05 1977-06-08 Mitsubishi Electric Corp Production of semiconductor device
JPS52127775A (en) * 1976-04-19 1977-10-26 Fujitsu Ltd Semiconductor integrated circuit and its preparation
JPS54112944A (en) * 1978-02-24 1979-09-04 Oopatsuku Kk Conductive adhesives
JPS54158876A (en) * 1978-06-06 1979-12-15 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5624970A (en) * 1979-08-07 1981-03-10 Nec Corp Manufacture of semiconductor device
US6322620B1 (en) 2000-11-16 2001-11-27 National Starch And Chemical Investment Holding Corporation Conductive ink composition

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
DE2419817A1 (en) 1974-12-05
JPS5022582A (en) 1975-03-11
CA1005171A (en) 1977-02-08
JPS5517495B2 (en) 1980-05-12
FR2231111B1 (en) 1978-03-31
NL7404614A (en) 1974-11-27

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Legal Events

Date Code Title Description
ST Notification of lapse