DE2265257C2 - Verfahren zur Herstellung einer integrierten Halbleiterschaltung - Google Patents

Verfahren zur Herstellung einer integrierten Halbleiterschaltung

Info

Publication number
DE2265257C2
DE2265257C2 DE2265257A DE2265257A DE2265257C2 DE 2265257 C2 DE2265257 C2 DE 2265257C2 DE 2265257 A DE2265257 A DE 2265257A DE 2265257 A DE2265257 A DE 2265257A DE 2265257 C2 DE2265257 C2 DE 2265257C2
Authority
DE
Germany
Prior art keywords
layer
semiconductor
insulating layer
semiconductor layer
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2265257A
Other languages
German (de)
English (en)
Other versions
DE2265257A1 (de
Inventor
Hajime Hohya Tokyo Kamioka
Kazufumi Nakayama
Mikio Tokyo Takagi
Chiaki Kawasaki Kanagawa Terada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE2265257A1 publication Critical patent/DE2265257A1/de
Application granted granted Critical
Publication of DE2265257C2 publication Critical patent/DE2265257C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/969—Simultaneous formation of monocrystalline and polycrystalline regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
DE2265257A 1971-10-11 1972-10-11 Verfahren zur Herstellung einer integrierten Halbleiterschaltung Expired DE2265257C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46080047A JPS5232234B2 (enrdf_load_stackoverflow) 1971-10-11 1971-10-11

Publications (2)

Publication Number Publication Date
DE2265257A1 DE2265257A1 (de) 1977-02-10
DE2265257C2 true DE2265257C2 (de) 1983-10-27

Family

ID=13707313

Family Applications (2)

Application Number Title Priority Date Filing Date
DE2265257A Expired DE2265257C2 (de) 1971-10-11 1972-10-11 Verfahren zur Herstellung einer integrierten Halbleiterschaltung
DE2249832A Expired DE2249832C3 (de) 1971-10-11 1972-10-11 Verfahren zum Herstellen einer Verdrahtungsschicht und Anwendung des Verfahrens zum Herstellen von Mehrschichtenverdrahtungen

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE2249832A Expired DE2249832C3 (de) 1971-10-11 1972-10-11 Verfahren zum Herstellen einer Verdrahtungsschicht und Anwendung des Verfahrens zum Herstellen von Mehrschichtenverdrahtungen

Country Status (4)

Country Link
US (1) US3849270A (enrdf_load_stackoverflow)
JP (1) JPS5232234B2 (enrdf_load_stackoverflow)
DE (2) DE2265257C2 (enrdf_load_stackoverflow)
GB (1) GB1413161A (enrdf_load_stackoverflow)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583380B2 (ja) * 1977-03-04 1983-01-21 株式会社日立製作所 半導体装置とその製造方法
JPS5893261A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体装置の製造方法
WO1990000476A1 (en) * 1988-07-12 1990-01-25 The Regents Of The University Of California Planarized interconnect etchback
US5256565A (en) * 1989-05-08 1993-10-26 The United States Of America As Represented By The United States Department Of Energy Electrochemical planarization
US5096550A (en) * 1990-10-15 1992-03-17 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for spatially uniform electropolishing and electrolytic etching
US7449098B1 (en) 1999-10-05 2008-11-11 Novellus Systems, Inc. Method for planar electroplating
US6315883B1 (en) 1998-10-26 2001-11-13 Novellus Systems, Inc. Electroplanarization of large and small damascene features using diffusion barriers and electropolishing
US6709565B2 (en) 1998-10-26 2004-03-23 Novellus Systems, Inc. Method and apparatus for uniform electropolishing of damascene ic structures by selective agitation
US7531079B1 (en) 1998-10-26 2009-05-12 Novellus Systems, Inc. Method and apparatus for uniform electropolishing of damascene IC structures by selective agitation
US6495442B1 (en) 2000-10-18 2002-12-17 Magic Corporation Post passivation interconnection schemes on top of the IC chips
US6653226B1 (en) 2001-01-09 2003-11-25 Novellus Systems, Inc. Method for electrochemical planarization of metal surfaces
TW200308009A (en) * 2002-04-09 2003-12-16 Rensselaer Polytech Inst Electrochemical planarization of metal feature surfaces
US7799200B1 (en) 2002-07-29 2010-09-21 Novellus Systems, Inc. Selective electrochemical accelerator removal
US8530359B2 (en) 2003-10-20 2013-09-10 Novellus Systems, Inc. Modulated metal removal using localized wet etching
US8158532B2 (en) * 2003-10-20 2012-04-17 Novellus Systems, Inc. Topography reduction and control by selective accelerator removal
US8168540B1 (en) 2009-12-29 2012-05-01 Novellus Systems, Inc. Methods and apparatus for depositing copper on tungsten

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3169892A (en) * 1959-04-08 1965-02-16 Jerome H Lemelson Method of making a multi-layer electrical circuit
GB1048424A (en) * 1963-08-28 1966-11-16 Int Standard Electric Corp Improvements in or relating to semiconductor devices
US3372063A (en) * 1964-12-22 1968-03-05 Hitachi Ltd Method for manufacturing at least one electrically isolated region of a semiconductive material
US3409523A (en) * 1966-03-10 1968-11-05 Bell Telephone Labor Inc Electroetching an aluminum plated semiconductor in a tetraalkylammonium hydroxide electrolyte
FR96113E (fr) * 1967-12-06 1972-05-19 Ibm Dispositif semi-conducteur.
NL7101307A (enrdf_load_stackoverflow) * 1970-02-03 1971-08-05

Also Published As

Publication number Publication date
JPS5232234B2 (enrdf_load_stackoverflow) 1977-08-19
DE2265257A1 (de) 1977-02-10
US3849270A (en) 1974-11-19
DE2249832A1 (de) 1973-04-19
GB1413161A (en) 1975-11-05
DE2249832C3 (de) 1982-02-18
JPS4845185A (enrdf_load_stackoverflow) 1973-06-28
DE2249832B2 (de) 1977-06-02

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Legal Events

Date Code Title Description
8181 Inventor (new situation)

Free format text: TAKAGI, MIKIO, TOKYO, JP NAKAYAMA, KAZUFUMI TERADA, CHIAKI, KAWASAKI, KANAGAWA, JP KAMIOKA, HAJIME,HOHYA, TOKYO, JP

8128 New person/name/address of the agent

Representative=s name: BLUMBACH, P., DIPL.-ING., 6200 WIESBADEN WESER, W.

AC Divided out of

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D2 Grant after examination
8364 No opposition during term of opposition