DE2216642C3 - Halbleiteranordnung und Verfahren zu ihrer Herstellung - Google Patents

Halbleiteranordnung und Verfahren zu ihrer Herstellung

Info

Publication number
DE2216642C3
DE2216642C3 DE2216642A DE2216642A DE2216642C3 DE 2216642 C3 DE2216642 C3 DE 2216642C3 DE 2216642 A DE2216642 A DE 2216642A DE 2216642 A DE2216642 A DE 2216642A DE 2216642 C3 DE2216642 C3 DE 2216642C3
Authority
DE
Germany
Prior art keywords
layer
semiconductor
conductivity type
buried layer
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2216642A
Other languages
German (de)
English (en)
Other versions
DE2216642A1 (de
DE2216642B2 (de
Inventor
Claude Jan Principe Frederic Le Nijmegen Can
Else Eindhoven Kooi
Walter Nijmegen Steinmaier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2216642A1 publication Critical patent/DE2216642A1/de
Publication of DE2216642B2 publication Critical patent/DE2216642B2/de
Application granted granted Critical
Publication of DE2216642C3 publication Critical patent/DE2216642C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment

Landscapes

  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE2216642A 1971-04-14 1972-04-07 Halbleiteranordnung und Verfahren zu ihrer Herstellung Expired DE2216642C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7105000A NL7105000A (enExample) 1971-04-14 1971-04-14

Publications (3)

Publication Number Publication Date
DE2216642A1 DE2216642A1 (de) 1972-10-19
DE2216642B2 DE2216642B2 (de) 1979-04-12
DE2216642C3 true DE2216642C3 (de) 1979-12-13

Family

ID=19812915

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2216642A Expired DE2216642C3 (de) 1971-04-14 1972-04-07 Halbleiteranordnung und Verfahren zu ihrer Herstellung

Country Status (11)

Country Link
AU (1) AU470407B2 (enExample)
BE (1) BE782012A (enExample)
BR (1) BR7202251D0 (enExample)
CH (1) CH539952A (enExample)
DE (1) DE2216642C3 (enExample)
ES (1) ES401687A1 (enExample)
FR (1) FR2133692B1 (enExample)
GB (1) GB1387021A (enExample)
IT (1) IT951314B (enExample)
NL (1) NL7105000A (enExample)
SE (1) SE383582B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL161301C (nl) * 1972-12-29 1980-01-15 Philips Nv Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan.
JPS5534619U (enExample) * 1978-08-25 1980-03-06

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE740938A (enExample) * 1967-12-05 1970-04-01

Also Published As

Publication number Publication date
GB1387021A (en) 1975-03-12
IT951314B (it) 1973-06-30
DE2216642A1 (de) 1972-10-19
BR7202251D0 (pt) 1973-06-07
DE2216642B2 (de) 1979-04-12
AU470407B2 (en) 1973-10-18
ES401687A1 (es) 1975-03-16
AU4093672A (en) 1973-10-18
CH539952A (de) 1973-07-31
NL7105000A (enExample) 1972-10-17
FR2133692B1 (enExample) 1977-08-19
BE782012A (fr) 1972-10-13
FR2133692A1 (enExample) 1972-12-01
SE383582B (sv) 1976-03-15

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee