NL7105000A - - Google Patents

Info

Publication number
NL7105000A
NL7105000A NL7105000A NL7105000A NL7105000A NL 7105000 A NL7105000 A NL 7105000A NL 7105000 A NL7105000 A NL 7105000A NL 7105000 A NL7105000 A NL 7105000A NL 7105000 A NL7105000 A NL 7105000A
Authority
NL
Netherlands
Application number
NL7105000A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL7105000A priority Critical patent/NL7105000A/xx
Priority to DE19722216642 priority patent/DE2216642C3/de
Priority to AU40936/72A priority patent/AU470407B2/en
Priority to CH531272A priority patent/CH539952A/de
Priority to GB1660972A priority patent/GB1387021A/en
Priority to SE467372A priority patent/SE383582B/xx
Priority to IT2301772A priority patent/IT951314B/it
Priority to ES401687A priority patent/ES401687A1/es
Priority to BE782012A priority patent/BE782012A/xx
Priority to FR7213006A priority patent/FR2133692B1/fr
Priority to BR225172A priority patent/BR7202251D0/pt
Publication of NL7105000A publication Critical patent/NL7105000A/xx
Priority to US399860A priority patent/US3909318A/en
Priority to US05/539,634 priority patent/US4005453A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
NL7105000A 1971-04-14 1971-04-14 NL7105000A (xx)

Priority Applications (13)

Application Number Priority Date Filing Date Title
NL7105000A NL7105000A (xx) 1971-04-14 1971-04-14
DE19722216642 DE2216642C3 (de) 1971-04-14 1972-04-07 Halbleiteranordnung und Verfahren zu ihrer Herstellung
AU40936/72A AU470407B2 (en) 1971-04-14 1972-04-10 Semiconductor device and method of manufacturing same
SE467372A SE383582B (sv) 1971-04-14 1972-04-11 Halvledaranordning och sett for dess framstellning
GB1660972A GB1387021A (en) 1971-04-14 1972-04-11 Semiconductor device manufacture
CH531272A CH539952A (de) 1971-04-14 1972-04-11 Halbleiteranordnung und Verfahren zur Herstellung derselben
IT2301772A IT951314B (it) 1971-04-14 1972-04-11 Dispositivo semiconduttore e meto do per la sua fabbricazione
ES401687A ES401687A1 (es) 1971-04-14 1972-04-12 Un dispositivo semiconductor.
BE782012A BE782012A (fr) 1971-04-14 1972-04-12 Dispositif semiconducteur et procede permettant sa fabrication
FR7213006A FR2133692B1 (xx) 1971-04-14 1972-04-13
BR225172A BR7202251D0 (pt) 1971-04-14 1972-04-14 Dispositivo semicondutor e processo de fazer o mesmo
US399860A US3909318A (en) 1971-04-14 1973-09-24 Method of forming complementary devices utilizing outdiffusion and selective oxidation
US05/539,634 US4005453A (en) 1971-04-14 1975-01-09 Semiconductor device with isolated circuit elements and method of making

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7105000A NL7105000A (xx) 1971-04-14 1971-04-14

Publications (1)

Publication Number Publication Date
NL7105000A true NL7105000A (xx) 1972-10-17

Family

ID=19812915

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7105000A NL7105000A (xx) 1971-04-14 1971-04-14

Country Status (11)

Country Link
AU (1) AU470407B2 (xx)
BE (1) BE782012A (xx)
BR (1) BR7202251D0 (xx)
CH (1) CH539952A (xx)
DE (1) DE2216642C3 (xx)
ES (1) ES401687A1 (xx)
FR (1) FR2133692B1 (xx)
GB (1) GB1387021A (xx)
IT (1) IT951314B (xx)
NL (1) NL7105000A (xx)
SE (1) SE383582B (xx)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL161301C (nl) * 1972-12-29 1980-01-15 Philips Nv Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan.
JPS5534619U (xx) * 1978-08-25 1980-03-06

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE740938A (xx) * 1967-12-05 1970-04-01

Also Published As

Publication number Publication date
BE782012A (fr) 1972-10-13
DE2216642C3 (de) 1979-12-13
FR2133692B1 (xx) 1977-08-19
GB1387021A (en) 1975-03-12
SE383582B (sv) 1976-03-15
DE2216642A1 (de) 1972-10-19
FR2133692A1 (xx) 1972-12-01
ES401687A1 (es) 1975-03-16
AU4093672A (en) 1973-10-18
CH539952A (de) 1973-07-31
AU470407B2 (en) 1973-10-18
DE2216642B2 (de) 1979-04-12
IT951314B (it) 1973-06-30
BR7202251D0 (pt) 1973-06-07

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Legal Events

Date Code Title Description
BI The patent application has been withdrawn