SE383582B - Halvledaranordning och sett for dess framstellning - Google Patents

Halvledaranordning och sett for dess framstellning

Info

Publication number
SE383582B
SE383582B SE467372A SE467372A SE383582B SE 383582 B SE383582 B SE 383582B SE 467372 A SE467372 A SE 467372A SE 467372 A SE467372 A SE 467372A SE 383582 B SE383582 B SE 383582B
Authority
SE
Sweden
Prior art keywords
kit
manufacture
semiconductor device
semiconductor
Prior art date
Application number
SE467372A
Other languages
English (en)
Inventor
Can C J P F Le
E Kooi
W Steinmaier
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE383582B publication Critical patent/SE383582B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
SE467372A 1971-04-14 1972-04-11 Halvledaranordning och sett for dess framstellning SE383582B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7105000A NL7105000A (sv) 1971-04-14 1971-04-14

Publications (1)

Publication Number Publication Date
SE383582B true SE383582B (sv) 1976-03-15

Family

ID=19812915

Family Applications (1)

Application Number Title Priority Date Filing Date
SE467372A SE383582B (sv) 1971-04-14 1972-04-11 Halvledaranordning och sett for dess framstellning

Country Status (11)

Country Link
AU (1) AU470407B2 (sv)
BE (1) BE782012A (sv)
BR (1) BR7202251D0 (sv)
CH (1) CH539952A (sv)
DE (1) DE2216642C3 (sv)
ES (1) ES401687A1 (sv)
FR (1) FR2133692B1 (sv)
GB (1) GB1387021A (sv)
IT (1) IT951314B (sv)
NL (1) NL7105000A (sv)
SE (1) SE383582B (sv)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL161301C (nl) * 1972-12-29 1980-01-15 Philips Nv Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan.
JPS5534619U (sv) * 1978-08-25 1980-03-06

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE740938A (sv) * 1967-12-05 1970-04-01

Also Published As

Publication number Publication date
DE2216642C3 (de) 1979-12-13
NL7105000A (sv) 1972-10-17
AU4093672A (en) 1973-10-18
CH539952A (de) 1973-07-31
BE782012A (fr) 1972-10-13
ES401687A1 (es) 1975-03-16
IT951314B (it) 1973-06-30
DE2216642A1 (de) 1972-10-19
AU470407B2 (en) 1973-10-18
DE2216642B2 (de) 1979-04-12
GB1387021A (en) 1975-03-12
BR7202251D0 (pt) 1973-06-07
FR2133692A1 (sv) 1972-12-01
FR2133692B1 (sv) 1977-08-19

Similar Documents

Publication Publication Date Title
SE381535B (sv) Halvledarstruktur och forfarande for dess framstellning
SE7507351L (sv) Integrerad krets
SE388258B (sv) Skruvformigt korrugerat ror samt anordning och sett for dess framstellning
IT949770B (it) Componente semiconduttore
SE395349B (sv) Blixtlas och forfarande for dess framstellning
IT947244B (it) Dispositivo semiconduttore
SE402839B (sv) Halvledaranordning och forfarande for dess framstellning
SE384922B (sv) Vetejonkenslig metanordning
IT975353B (it) Dispositivo semiconduttore
SE380674B (sv) Sett for gettring av halvledare och anordning for genomforande av settet
SE373503B (sv) Vattengenomsleppande konstgresmatta och sett for dess framstellning
IT959277B (it) Dispositivo semiconduttore
SE394207B (sv) Glasprofil samt sett och anordning for dess framstellning
TR17651A (tr) Hararet muebadele cihazi
FI56289C (fi) Funktionsoevervakat informationsminne speciellt integrerat halvledarminne
SE383582B (sv) Halvledaranordning och sett for dess framstellning
IT963763B (it) Fotometro
IT968868B (it) Dispoitivo semiconduttore
AT348801B (de) Spektrometrieeinrichtung
IT949161B (it) Dispositivo semiconduttore
CH517379A (de) Halbleitervorrichtung
SE405526B (sv) Transistor och sett for dess tillverkning
FI53655B (sv) Urinavledningsanordning
AT314589B (de) Brückenlegegerät
SE382412B (sv) Sett och anordning for framstellning av kuggremmar