DE2205991B2 - Verfahren zur bildung eines fuer lawinendurchbruch vorgesehenen uebergangs in einem halbleiter-bauelement - Google Patents
Verfahren zur bildung eines fuer lawinendurchbruch vorgesehenen uebergangs in einem halbleiter-bauelementInfo
- Publication number
- DE2205991B2 DE2205991B2 DE19722205991 DE2205991A DE2205991B2 DE 2205991 B2 DE2205991 B2 DE 2205991B2 DE 19722205991 DE19722205991 DE 19722205991 DE 2205991 A DE2205991 A DE 2205991A DE 2205991 B2 DE2205991 B2 DE 2205991B2
- Authority
- DE
- Germany
- Prior art keywords
- zone
- diffusion
- dopant
- base
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 16
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 230000007704 transition Effects 0.000 title claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 56
- 239000002019 doping agent Substances 0.000 claims description 20
- 230000015556 catabolic process Effects 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 230000000873 masking effect Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11486171A | 1971-02-12 | 1971-02-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2205991A1 DE2205991A1 (de) | 1972-08-17 |
| DE2205991B2 true DE2205991B2 (de) | 1977-12-22 |
Family
ID=22357843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19722205991 Withdrawn DE2205991B2 (de) | 1971-02-12 | 1972-02-09 | Verfahren zur bildung eines fuer lawinendurchbruch vorgesehenen uebergangs in einem halbleiter-bauelement |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3765961A (enExample) |
| KR (1) | KR780000084B1 (enExample) |
| BE (1) | BE779087A (enExample) |
| CA (1) | CA929281A (enExample) |
| DE (1) | DE2205991B2 (enExample) |
| FR (1) | FR2125430B1 (enExample) |
| GB (1) | GB1369357A (enExample) |
| HK (1) | HK34976A (enExample) |
| IT (1) | IT949059B (enExample) |
| NL (1) | NL7201560A (enExample) |
| SE (1) | SE373692B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3862930A (en) * | 1972-08-22 | 1975-01-28 | Us Navy | Radiation-hardened cmos devices and circuits |
| DE2405067C2 (de) * | 1974-02-02 | 1982-06-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen einer Halbleiteranordnung |
| US3926695A (en) * | 1974-12-27 | 1975-12-16 | Itt | Etched silicon washed emitter process |
| US4099998A (en) * | 1975-11-03 | 1978-07-11 | General Electric Company | Method of making zener diodes with selectively variable breakdown voltages |
| US4038107B1 (en) * | 1975-12-03 | 1995-04-18 | Samsung Semiconductor Tele | Method for making transistor structures |
| US4177095A (en) * | 1977-02-25 | 1979-12-04 | National Semiconductor Corporation | Process for fabricating an integrated circuit subsurface zener diode utilizing conventional processing steps |
| US4213806A (en) * | 1978-10-05 | 1980-07-22 | Analog Devices, Incorporated | Forming an IC chip with buried zener diode |
| US4203781A (en) * | 1978-12-27 | 1980-05-20 | Bell Telephone Laboratories, Incorporated | Laser deformation of semiconductor junctions |
| JP2573201B2 (ja) * | 1987-02-26 | 1997-01-22 | 株式会社東芝 | 半導体素子の拡散層形成方法 |
| US5129972A (en) * | 1987-12-23 | 1992-07-14 | The Lubrizol Corporation | Emulsifiers and explosive emulsions containing same |
| NO346312B1 (no) * | 2020-10-22 | 2022-05-30 | Arnfinn Saervoll | Punktbelastet løftegaffel til løfting av stående forskalingslemmer |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3345221A (en) * | 1963-04-10 | 1967-10-03 | Motorola Inc | Method of making a semiconductor device having improved pn junction avalanche characteristics |
| US3328214A (en) * | 1963-04-22 | 1967-06-27 | Siliconix Inc | Process for manufacturing horizontal transistor structure |
| US3477886A (en) * | 1964-12-07 | 1969-11-11 | Motorola Inc | Controlled diffusions in semiconductive materials |
| US3456168A (en) * | 1965-02-19 | 1969-07-15 | United Aircraft Corp | Structure and method for production of narrow doped region semiconductor devices |
| US3347720A (en) * | 1965-10-21 | 1967-10-17 | Bendix Corp | Method of forming a semiconductor by masking and diffusion |
| US3457469A (en) * | 1965-11-15 | 1969-07-22 | Motorola Inc | Noise diode having an alloy zener junction |
| US3477123A (en) * | 1965-12-21 | 1969-11-11 | Ibm | Masking technique for area reduction of planar transistors |
| US3490962A (en) * | 1966-04-25 | 1970-01-20 | Ibm | Diffusion process |
| DE1589693C3 (de) * | 1967-08-03 | 1980-04-03 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Halbleiterbauelement mit flächenhaftem PN-Übergang |
| US3585464A (en) * | 1967-10-19 | 1971-06-15 | Ibm | Semiconductor device fabrication utilizing {21 100{22 {0 oriented substrate material |
| US3514846A (en) * | 1967-11-15 | 1970-06-02 | Bell Telephone Labor Inc | Method of fabricating a planar avalanche photodiode |
| US3566218A (en) * | 1968-10-02 | 1971-02-23 | Nat Semiconductor Corp The | Multiple base width integrated circuit |
-
1971
- 1971-02-12 US US00114861A patent/US3765961A/en not_active Expired - Lifetime
- 1971-10-18 CA CA125378A patent/CA929281A/en not_active Expired
-
1972
- 1972-02-03 SE SE7201246A patent/SE373692B/xx unknown
- 1972-02-07 NL NL7201560A patent/NL7201560A/xx unknown
- 1972-02-08 GB GB576372A patent/GB1369357A/en not_active Expired
- 1972-02-08 BE BE779087A patent/BE779087A/xx unknown
- 1972-02-08 KR KR7800183A patent/KR780000084B1/ko not_active Expired
- 1972-02-09 DE DE19722205991 patent/DE2205991B2/de not_active Withdrawn
- 1972-02-10 IT IT67414/72A patent/IT949059B/it active
- 1972-02-11 FR FR7204751A patent/FR2125430B1/fr not_active Expired
-
1976
- 1976-06-10 HK HK349/76*UA patent/HK34976A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CA929281A (en) | 1973-06-26 |
| GB1369357A (en) | 1974-10-02 |
| KR780000084B1 (en) | 1978-03-30 |
| SE373692B (sv) | 1975-02-10 |
| FR2125430B1 (enExample) | 1977-04-01 |
| NL7201560A (enExample) | 1972-08-15 |
| FR2125430A1 (enExample) | 1972-09-29 |
| IT949059B (it) | 1973-06-11 |
| BE779087A (fr) | 1972-05-30 |
| DE2205991A1 (de) | 1972-08-17 |
| HK34976A (en) | 1976-06-18 |
| US3765961A (en) | 1973-10-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BHN | Withdrawal |