DE2143553A1 - Verfahren und Vorrichtung zum Ziehen von Kristallstäben - Google Patents
Verfahren und Vorrichtung zum Ziehen von KristallstäbenInfo
- Publication number
- DE2143553A1 DE2143553A1 DE19712143553 DE2143553A DE2143553A1 DE 2143553 A1 DE2143553 A1 DE 2143553A1 DE 19712143553 DE19712143553 DE 19712143553 DE 2143553 A DE2143553 A DE 2143553A DE 2143553 A1 DE2143553 A1 DE 2143553A1
- Authority
- DE
- Germany
- Prior art keywords
- electrical
- control signal
- melt
- opto
- monitors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims description 69
- 238000000034 method Methods 0.000 title claims description 22
- 239000000155 melt Substances 0.000 claims description 49
- 230000005855 radiation Effects 0.000 claims description 22
- 125000001475 halogen functional group Chemical group 0.000 claims description 21
- 210000002837 heart atrium Anatomy 0.000 claims description 20
- 238000004033 diameter control Methods 0.000 claims description 13
- 230000000694 effects Effects 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 230000001746 atrial effect Effects 0.000 claims description 2
- 230000001276 controlling effect Effects 0.000 claims 2
- 230000005693 optoelectronics Effects 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- 238000012806 monitoring device Methods 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 8
- 238000012544 monitoring process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 101100042630 Caenorhabditis elegans sin-3 gene Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002996 emotional effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6828270A | 1970-08-31 | 1970-08-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2143553A1 true DE2143553A1 (de) | 1972-03-09 |
Family
ID=22081586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712143553 Pending DE2143553A1 (de) | 1970-08-31 | 1971-08-31 | Verfahren und Vorrichtung zum Ziehen von Kristallstäben |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3692499A (OSRAM) |
| CA (1) | CA945043A (OSRAM) |
| DE (1) | DE2143553A1 (OSRAM) |
| FR (1) | FR2106191A5 (OSRAM) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3870477A (en) * | 1972-07-10 | 1975-03-11 | Tyco Laboratories Inc | Optical control of crystal growth |
| DE2349736A1 (de) * | 1973-10-03 | 1975-04-24 | Siemens Ag | Ueberwachungseinrichtung fuer eine vorrichtung zum ziehen von kristallen aus der schmelze |
| US3998598A (en) * | 1973-11-23 | 1976-12-21 | Semimetals, Inc. | Automatic diameter control for crystal growing facilities |
| BE811057A (fr) * | 1974-02-15 | 1974-08-16 | Elphiac Sa | Machine universelle pour l'elaboration de monocristaux de materiaux semiconducteurs ou autres suivant les methodes classiques. |
| US4032390A (en) * | 1974-02-25 | 1977-06-28 | Corning Glass Works | Plural crystal pulling from a melt in an annular crucible heated on both inner and outer walls |
| GB1478192A (en) * | 1974-03-29 | 1977-06-29 | Nat Res Dev | Automatically controlled crystal growth |
| US4350557A (en) * | 1974-06-14 | 1982-09-21 | Ferrofluidics Corporation | Method for circumferential dimension measuring and control in crystal rod pulling |
| US4207293A (en) * | 1974-06-14 | 1980-06-10 | Varian Associates, Inc. | Circumferential error signal apparatus for crystal rod pulling |
| US4185076A (en) * | 1977-03-17 | 1980-01-22 | Mobil Tyco Solar Energy Corporation | Apparatus for controlled growth of silicon and germanium crystal ribbons |
| US4184907A (en) * | 1977-03-17 | 1980-01-22 | Mobil Tyco Solar Energy Corporation | Control of capillary die shaped crystal growth of silicon and germanium crystals |
| US4217165A (en) * | 1978-04-28 | 1980-08-12 | Ciszek Theodore F | Method of growing a ribbon crystal particularly suited for facilitating automated control of ribbon width |
| DE2821481C2 (de) * | 1978-05-17 | 1985-12-05 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze |
| US4290835A (en) * | 1978-06-14 | 1981-09-22 | Mobil Tyco Solar Energy Corporation | Method for crystal growth control |
| US4239583A (en) * | 1979-06-07 | 1980-12-16 | Mobil Tyco Solar Energy Corporation | Method and apparatus for crystal growth control |
| US4282184A (en) * | 1979-10-09 | 1981-08-04 | Siltec Corporation | Continuous replenishment of molten semiconductor in a Czochralski-process, single-crystal-growing furnace |
| US4617173A (en) * | 1984-11-30 | 1986-10-14 | General Signal Corporation | System for controlling the diameter of a crystal in a crystal growing furnace |
| US4710258A (en) * | 1984-11-30 | 1987-12-01 | General Signal Corporation | System for controlling the diameter of a crystal in a crystal growing furnace |
| JP2561072B2 (ja) * | 1986-04-30 | 1996-12-04 | 東芝セラミツクス株式会社 | 単結晶の育成方法及びその装置 |
| US4857278A (en) * | 1987-07-13 | 1989-08-15 | Massachusetts Institute Of Technology | Control system for the czochralski process |
| JPH0785489B2 (ja) * | 1991-02-08 | 1995-09-13 | 信越半導体株式会社 | 単結晶の直径計測方法 |
| JPH0717475B2 (ja) * | 1991-02-14 | 1995-03-01 | 信越半導体株式会社 | 単結晶ネック部育成自動制御方法 |
| DE4231162C2 (de) * | 1992-09-17 | 1996-03-14 | Wacker Siltronic Halbleitermat | Verfahren zur Regelung der Schmelzenhöhe während des Ziehens von Einkristallen |
| DE19548845B4 (de) * | 1995-12-27 | 2008-04-10 | Crystal Growing Systems Gmbh | Vorrichtung und Verfahren zum Ziehen von Einkristallen nach dem Czochralski-Verfahren |
| US5746828A (en) * | 1996-01-16 | 1998-05-05 | General Signal Corporation | Temperature control system for growing high-purity monocrystals |
| US5882402A (en) * | 1997-09-30 | 1999-03-16 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal |
-
1970
- 1970-08-31 US US68282A patent/US3692499A/en not_active Expired - Lifetime
-
1971
- 1971-07-27 CA CA119,216A patent/CA945043A/en not_active Expired
- 1971-08-30 FR FR7131294A patent/FR2106191A5/fr not_active Expired
- 1971-08-31 DE DE19712143553 patent/DE2143553A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3692499A (en) | 1972-09-19 |
| CA945043A (en) | 1974-04-09 |
| FR2106191A5 (OSRAM) | 1972-04-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |