DE2101128A1 - Verfahren zur Herstellung von hochohmigen Diffusions-Mikrowiderständen - Google Patents

Verfahren zur Herstellung von hochohmigen Diffusions-Mikrowiderständen

Info

Publication number
DE2101128A1
DE2101128A1 DE19712101128 DE2101128A DE2101128A1 DE 2101128 A1 DE2101128 A1 DE 2101128A1 DE 19712101128 DE19712101128 DE 19712101128 DE 2101128 A DE2101128 A DE 2101128A DE 2101128 A1 DE2101128 A1 DE 2101128A1
Authority
DE
Germany
Prior art keywords
resistors
production
diffusion
atoms
admixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712101128
Other languages
German (de)
English (en)
Inventor
Jordan Dimitrov Dipl.-Ing. Sofia Kassabov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zentralen Inst SA Elementi
Original Assignee
Zentralen Inst SA Elementi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zentralen Inst SA Elementi filed Critical Zentralen Inst SA Elementi
Publication of DE2101128A1 publication Critical patent/DE2101128A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/30—Apparatus or processes specially adapted for manufacturing resistors adapted for baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H10P32/1404—
    • H10P32/171—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/92—Controlling diffusion profile by oxidation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
DE19712101128 1970-01-14 1971-01-12 Verfahren zur Herstellung von hochohmigen Diffusions-Mikrowiderständen Pending DE2101128A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BG1374670 1970-01-14

Publications (1)

Publication Number Publication Date
DE2101128A1 true DE2101128A1 (de) 1971-07-22

Family

ID=3897413

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712101128 Pending DE2101128A1 (de) 1970-01-14 1971-01-12 Verfahren zur Herstellung von hochohmigen Diffusions-Mikrowiderständen

Country Status (5)

Country Link
US (1) US3726726A (OSRAM)
DE (1) DE2101128A1 (OSRAM)
DK (1) DK125347B (OSRAM)
ES (1) ES387013A1 (OSRAM)
FR (1) FR2075502A5 (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49114355A (OSRAM) * 1973-02-28 1974-10-31

Also Published As

Publication number Publication date
ES387013A1 (es) 1973-04-16
FR2075502A5 (OSRAM) 1971-10-08
DK125347B (da) 1973-02-05
US3726726A (en) 1973-04-10

Similar Documents

Publication Publication Date Title
DE4229574C2 (de) Feldeffekttransistor und Verfahren zu dessen Herstellung
DE2352762C2 (de) Verfahren zur Herstellung einer monolithischen Halbleiterschaltungsanordnung mit komplementären Feldeffekt-Transistoren
DE2620155C2 (OSRAM)
DE2700873C2 (de) Verfahren zur Herstellung von komplementären Isolierschicht-Feldeffekttransistoren
DE1614540C3 (de) Halbleiteranordnung sowie Verfahren zu ihrer Herstellung
DE1764281C3 (de) Verfahren zum Herstellen einer Halbleitervorrichtung
DE2422195C2 (de) Verfahren zur Vermeidung von Grenzschichtzuständen bei der Herstellung von Halbleiteranordnungen
DE3327301A1 (de) Integrierte halbleiterschaltung und verfahren zu ihrer herstellung
DE2734694A1 (de) Isolierschicht-feldeffekttransistor mit kleiner kanallaenge und verfahren zu seiner herstellung
DE2253702A1 (de) Verfahren zur herstellung einer halbleiteranordnung und durch dieses verfahren hergestellte halbleiteranordnung
DE69016955T2 (de) Verfahren zur Herstellung einer Halbleiteranordnung.
EP0001574A1 (de) Halbleiteranordnung für Widerstandsstrukturen in hochintegrierten Schaltkreisen und Verfahren zur Herstellung dieser Halbleiteranordnung
DE4221039C2 (de) Verfahren zur Herstellung einer Halbleitervorrichtung mit einem vertikalen Halbleiterelement und einem weiteren Halbleiterbauelement
DE3125064A1 (de) "verfahren zum herstellen eines integrierten schaltkreises"
DE2047672A1 (de) Hochfrequenz Feldeffekttransistor
DE2639465A1 (de) Integrierte halbleiterstruktur und verfahren zur herstellung
DE2718449A1 (de) Verfahren zur herstellung einer halbleiteranordnung und durch dieses verfahren hergestellte anordnung
DE2723374A1 (de) Halbleiterstruktur mit mindestens einem fet und verfahren zu ihrer herstellung
DE3780936T2 (de) Verfahren zum herstellen einer halbleitervorrichtung.
DE2162445A1 (de) Verfahren zur Herstellung einer Halbleiteranordnung und durch dieses Verfahren hergestellte Anordnung
DE2111633A1 (de) Verfahren zur Herstellung eines Oberflaechen-Feldeffekt-Transistors
DE2911726C2 (de) Verfahren zur Herstellung eines Feldeffekttransistors
DE2101128A1 (de) Verfahren zur Herstellung von hochohmigen Diffusions-Mikrowiderständen
DE2854073A1 (de) Feldeffekttransistor-anordnung sowie verfahren zu ihrer herstellung
DE2801680A1 (de) Verfahren zur herstellung einer halbleitereinrichtung