DE2056277A1 - Spannungsabhangiges Kapazitatsbauele ment und Verfahren zu dessen Herstellung - Google Patents
Spannungsabhangiges Kapazitatsbauele ment und Verfahren zu dessen HerstellungInfo
- Publication number
- DE2056277A1 DE2056277A1 DE19702056277 DE2056277A DE2056277A1 DE 2056277 A1 DE2056277 A1 DE 2056277A1 DE 19702056277 DE19702056277 DE 19702056277 DE 2056277 A DE2056277 A DE 2056277A DE 2056277 A1 DE2056277 A1 DE 2056277A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- capacitance component
- insulating layer
- voltage
- capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 8
- 230000001419 dependent effect Effects 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 238000003860 storage Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 31
- 239000011810 insulating material Substances 0.000 claims 3
- 239000004020 conductor Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 230000007812 deficiency Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- -1 i.e. Chemical compound 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE15739/69A SE337430B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1969-11-17 | 1969-11-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2056277A1 true DE2056277A1 (de) | 1971-05-27 |
Family
ID=20301165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702056277 Pending DE2056277A1 (de) | 1969-11-17 | 1970-11-16 | Spannungsabhangiges Kapazitatsbauele ment und Verfahren zu dessen Herstellung |
Country Status (6)
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3840809A (en) * | 1972-12-04 | 1974-10-08 | Ibm | Non-destructive measurement of dielectric properties |
| JPS51152707U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1975-05-29 | 1976-12-06 | ||
| JP2561413B2 (ja) * | 1993-02-23 | 1996-12-11 | 日産自動車株式会社 | 半導体装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3202891A (en) * | 1960-11-30 | 1965-08-24 | Gen Telephone & Elect | Voltage variable capacitor with strontium titanate dielectric |
| DE1514398A1 (de) * | 1965-02-09 | 1969-09-11 | Siemens Ag | Halbleiteranordnung |
| GB1208077A (en) * | 1967-05-19 | 1970-10-07 | Sperry Rand Corp | Semiconductor devices |
| CA813537A (en) * | 1967-10-17 | 1969-05-20 | Joseph H. Scott, Jr. | Semiconductor memory device |
| US3512052A (en) * | 1968-01-11 | 1970-05-12 | Gen Motors Corp | Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric |
-
1969
- 1969-11-17 SE SE15739/69A patent/SE337430B/xx unknown
-
1970
- 1970-10-16 US US89819A patent/US3638078A/en not_active Expired - Lifetime
- 1970-11-10 GB GB5348870A patent/GB1323443A/en not_active Expired
- 1970-11-16 FR FR7041000A patent/FR2067335B1/fr not_active Expired
- 1970-11-16 JP JP45100983A patent/JPS4822308B1/ja active Pending
- 1970-11-16 DE DE19702056277 patent/DE2056277A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2067335A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1971-08-20 |
| FR2067335B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-09-20 |
| US3638078A (en) | 1972-01-25 |
| JPS4822308B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-07-05 |
| SE337430B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1971-08-09 |
| GB1323443A (en) | 1973-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2805170C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE2444160A1 (de) | Gleichrichterdiode | |
| DE1930669A1 (de) | Integrierte Halbleiterschaltung und Verfahren zu ihrer Herstellung | |
| DE2354489A1 (de) | Schottky-sperrschichtdioden | |
| DE1764513B1 (de) | Feldeffekt halbleitersteuerelement | |
| DE2510821A1 (de) | Organische substanzen enthaltende elektronische vorrichtungen | |
| DE2500775C3 (de) | Hochspannungsfestes planeres Halbleiterbauelement | |
| DE2800820A1 (de) | Halbleiter-diode | |
| DE1808928A1 (de) | Halbleiterbauelement und Verfahren zu dessen Herstellung | |
| DE1951243A1 (de) | MOS-Kapazitaetsdiode | |
| DE2460682A1 (de) | Halbleitervorrichtung | |
| DE2414142A1 (de) | Spannungsveraenderliche kondensatoranordnung | |
| DE2056277A1 (de) | Spannungsabhangiges Kapazitatsbauele ment und Verfahren zu dessen Herstellung | |
| DE2114363A1 (de) | Spannungsvariabler Kondensator mit erweiterbarem pn-Übergangsbereich | |
| DE1489193C3 (de) | Verfahren zum Herstellen einer Halbleiteranordnung | |
| DE1464669B1 (de) | Halbleiterdiode mit stark spannungsabhaengiger Kapazitaet | |
| DE2541651A1 (de) | Ladungsuebertragungsvorrichtung | |
| DE2613096A1 (de) | Halbleiteranordnung | |
| DE2109418A1 (de) | Mechanisch-elektrischer Halbleiterwandler | |
| DE1471181A1 (de) | Verfahren zur Herstellung eines Halbleiterbauelementes aus einem halbleitenden Substrat | |
| DE2657511A1 (de) | Monolithisch integrierbare speicherzelle | |
| DE1514082A1 (de) | Halbleitervorrichtung und Verfahren zu ihrer Herstellung | |
| DE2147291C3 (de) | Kapazitätsdiode mit einem großen Kapazitätshub und Verfahren zu ihrer Herstellung | |
| DE1285625C2 (de) | Verfahren zur herstellung eines halbleiterbauelements | |
| DE2320412C3 (de) | Verfahren zur Herstellung und Sortierung abschaltbarer Thyristoren |